Generation–recombination noise

Generation–recombination noise, or g–r noise, is a type of electrical signal noise caused statistically by the fluctuation of the generation and recombination of electrons in semiconductor-based photon detectors.{{Cite journal |last=Smith |first=D. L. |date=1982 |title=Theory of generation‐recombination noise in intrinsic photoconductors |url=https://aip.scitation.org/doi/10.1063/1.330006 |journal=Journal of Applied Physics |volume=53 |issue=10 |pages=7051–7060 |doi=10.1063/1.330006 |bibcode=1982JAP....53.7051S |issn=0021-8979|url-access=subscription }}

References

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See also

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Category:Noise (electronics)

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