Mark S. Lundstrom

{{Infobox scientist

| name = Mark S. Lundstrom

| image = Mark S. Lundstrom.jpg

| caption = Lundstrom in 2024

| birth_date =

| birth_place = Alexandria, Minnesota, U.S.

| death_date =

| death_place =

| residence =

| nationality = American

| field = Electronic devices and Materials

| work_institution = Purdue University

| doctoral_advisor = R. J. Schwartz

| doctoral_students =

| known_for = Lundstrom model of the nanotransistor

| prizes =

| religion =

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}}

Mark S. Lundstrom is an American electrical engineering researcher, educator, and author. He is known for contributions to the theory, modeling, and understanding of semiconductor devices, especially nanoscale transistors,{{Cite web|url=https://ethw.org/Mark_Lundstrom|title=Mark Lundstrom - Engineering and Technology History Wiki|website=ethw.org|date=23 April 2018 |access-date=2019-08-19}}{{Cite book|title=Fundamentals of Nanotransistors|last=Lundstrom|first=Mark|date=September 2017|publisher=WORLD SCIENTIFIC|isbn=9789814571722|series=Lessons from Nanoscience: A Lecture Notes Series|volume=06|doi=10.1142/9018}} and as the creator of the nanoHUB, a major online resource for nanotechnology.{{Cite web|url=https://nanohub.org/|title=nanoHUB.org - Simulation, Education, and Community for Nanotechnology|website=nanohub.org|access-date=2019-08-19}}{{Cite journal|last1=Klimeck|first1=Gerhard|last2=McLennan|first2=Michael|last3=Brophy|first3=Sean P.|last4=Adams III|first4=George B.|last5=Lundstrom|first5=Mark S.|date=September 2008|title=nanoHUB.org: Advancing Education and Research in Nanotechnology|journal=Computing in Science & Engineering|volume=10|issue=5|pages=17–23|doi=10.1109/MCSE.2008.120|issn=1521-9615|bibcode=2008CSE....10e..17K|s2cid=2020684|url=https://docs.lib.purdue.edu/nanodocs/80|url-access=subscription}} Lundstrom is Don and Carol Scifres Distinguished Professor of Electrical and Computer Engineering and in 2020 served as Acting Dean of the College of Engineering at Purdue University, in West Lafayette, Indiana.{{Cite web|url=https://engineering.purdue.edu/ECE/People/ptProfile|title=Mark S. Lundstrom|website=Electrical and Computer Engineering - Purdue University|access-date=2019-08-19}}

Early life and education

Lundstrom was born and grew up in Alexandria, Minnesota and graduated from high school in 1969.{{Cite web|url=https://alexeducationfoundation.org/hall-of-fame-inductees/|title=Hall Of Fame Inductees|website=Alexandria Education Foundation|access-date=2019-08-19}} He received his BEE from the University of Minnesota in 1973.{{Cite web|url=http://uawards.umn.edu/outstanding-achievement-award/recipients-outstanding-achievement-award#L|title=Recipients of the Outstanding Achievement Award {{!}} University Awards and Honors|website=uawards.umn.edu|access-date=2019-08-19|archive-date=2018-08-01|archive-url=https://web.archive.org/web/20180801034422/http://uawards.umn.edu/outstanding-achievement-award/recipients-outstanding-achievement-award#L|url-status=dead}} As an undergraduate student, he was introduced to research by working in the laboratory of Aldert van der Ziel. Lundstrom received an MSEE degree from the University of Minnesota in 1974 for research on surface acoustic wave devices. He was a Member of the Technical Staff at Hewlett Packard Corporation in Colorado where he worked on integrated circuit process development.{{Cite web|url=http://www.springer.com/engineering/electronics?SGWID=0-191-2-388910-0|title=Prof. Mark Lundstrom|website=springer.com|access-date=2019-08-19}} Lundstrom received his Ph.D. in Electrical Engineering from Purdue University in 1980 for research on silicon solar cells. His thesis advisor was Richard J. Schwartz, inventor of the Interdigitated Back Contact (IBC) solar cell.{{Cite journal|last1=Lammert|first1=M.D.|last2=Schwartz|first2=R.J.|date=April 1977|title=The interdigitated back contact solar cell: A silicon solar cell for use in concentrated sunlight|journal=IEEE Transactions on Electron Devices|volume=24|issue=4|pages=337–342|doi=10.1109/T-ED.1977.18738|issn=0018-9383|bibcode=1977ITED...24..337L|s2cid=12211582}} In 1980, Lundstrom joined Purdue University.

Career

Lundstrom’s research focuses on understanding current flow in electronic devices. He has conducted studies on the theory, modeling, and numerical simulation of charge carrier transport in semiconductor devices – especially devices with dimensions at the nanoscale.{{Cite journal|last1=Dai|first1=Hongjie|last2=Lundstrom|first2=Mark|last3=Wang|first3=Qian|last4=Guo|first4=Jing|last5=Javey|first5=Ali|date=August 2003|title=Ballistic carbon nanotube field-effect transistors|journal=Nature|volume=424|issue=6949|pages=654–657|doi=10.1038/nature01797|pmid=12904787|issn=1476-4687|bibcode=2003Natur.424..654J|s2cid=1142790}}{{Cite journal|last1=Rahman|first1=A.|last2=Jing Guo|last3=Datta|first3=S.|last4=Lundstrom|first4=M.S.|date=September 2003|title=Theory of ballistic nanotransistors|journal=IEEE Transactions on Electron Devices|volume=50|issue=9|pages=1853–1864|doi=10.1109/TED.2003.815366|issn=0018-9383|bibcode=2003ITED...50.1853R|s2cid=6255139}}{{Cite journal|last=Lundstrom|first=M.|date=July 1997|title=Elementary scattering theory of the Si MOSFET|journal=IEEE Electron Device Letters|volume=18|issue=7|pages=361–363|doi=10.1109/55.596937|issn=0741-3106|bibcode=1997IEDL...18..361L|s2cid=17428258}}{{Cite journal|last1=Lundstrom|first1=M.|last2=Ren|first2=Z.|date=January 2002|title=Essential physics of carrier transport in nanoscale MOSFETs|journal=IEEE Transactions on Electron Devices|volume=49|issue=1|pages=133–141|doi=10.1109/16.974760|bibcode=2002ITED...49..133L}}{{Cite journal|last1=Franklin|first1=Aaron D.|last2=Luisier|first2=Mathieu|last3=Han|first3=Shu-Jen|last4=Tulevski|first4=George|last5=Breslin|first5=Chris M.|last6=Gignac|first6=Lynne|last7=Lundstrom|first7=Mark S.|last8=Haensch|first8=Wilfried|date=2012-02-08|title=Sub-10 nm Carbon Nanotube Transistor|journal=Nano Letters|volume=12|issue=2|pages=758–762|doi=10.1021/nl203701g|pmid=22260387|issn=1530-6984|bibcode=2012NanoL..12..758F|s2cid=12194219}} He is the author of Fundamentals of Carrier Transport (Addison-Wesley, 1990), {{cite book |last1=Lundstrom |first1=Mark |title=Fundamentals of Carrier Transport |volume= X |series= Modular Series on Solid State Devices |date= October 2000 |publisher=Cambridge University Press |location= |isbn=978-0-521-63724-4 |edition=2 |url=https://www.cambridge.org/core/books/fundamentals-of-carrier-transport/FD2F0F2ACB395F9920F9692726431EC4 |access-date= |doi=10.1017/CBO9780511618611 |quote=}} the second edition of which (Cambridge Univ. Press, 2000) has become a standard reference on charge carrier transport in semiconductors.

Lundstrom’s most important contribution is a conceptual model for nanoscale transistors backed up with rigorous numerical simulations, and elaborated in his books Fundamentals of Nanotransistors (World Scientific, 2017){{cite book |last1=Lundstrom |first1=Mark |title=Fundamentals of Nanotransistors |series=Lessons from Nanoscience: A Lecture Notes Series |date=September 2017 |volume=06 |publisher=WORLD SCIENTIFIC |doi=10.1142/9018 |isbn=978-981-4571-72-2 |url=https://www.worldscientific.com/worldscibooks/10.1142/9018 |language=en}} and Nanoscale Transistors - Device Physics, Modeling and Simulation (Springer, 2006){{cite book |title=Nanoscale Transistors |url=https://www.springer.com/gp/book/9780387280028 |language=en}} as well as numerous journal articles.{{Cite journal|last1=Anantram|first1=M.P.|last2=Lundstrom|first2=M.S.|last3=Nikonov|first3=D.E.|date=September 2008|title=Modeling of Nanoscale Devices|journal=Proceedings of the IEEE|volume=96|issue=9|pages=1511–1550|doi=10.1109/jproc.2008.927355|arxiv=cond-mat/0610247|s2cid=8076763}}{{Cite journal|last1=Guo|first1=Jing|last2=Datta|first2=Supriyo|last3=Lundstrom|first3=Mark|last4=Anantam|first4=M. P.|date=2004|title=Toward Multiscale Modeling of Carbon Nanotube Transistors|journal=International Journal for Multiscale Computational Engineering|volume=2|issue=2|pages=257–276|doi=10.1615/IntJMultCompEng.v2.i2.60|issn=1543-1649}} He has also contributed to the understanding, modeling and design of other semiconductor devices. His early work focused on heterostructure devices, namely solar cells{{Cite journal|last=Lundstrom|first=Mark S.|date=May 1988|title=Device physics of crystalline solar cells|journal=Solar Cells|volume=24|issue=1–2|pages=91–102|doi=10.1016/0379-6787(88)90039-7}}{{Cite journal|last1=Wang|first1=Xufeng|last2=Khan|first2=Mohammad Ryyan|last3=Gray|first3=Jeffery L.|last4=Alam|first4=Muhammad Ashraful|last5=Lundstrom|first5=Mark S.|date=April 2013|title=Design of GaAs Solar Cells Operating Close to the Shockley–Queisser Limit|journal=IEEE Journal of Photovoltaics|volume=3|issue=2|pages=737–744|doi=10.1109/JPHOTOV.2013.2241594|s2cid=36523127|issn=2156-3381}}{{Cite journal|last1=Lush|first1=Greg|last2=Lundstrom|first2=Mark|date=May 1991|title=Thin film approaches for high-efficiency III–V cells|journal=Solar Cells|volume=30|issue=1–4|pages=337–344|doi=10.1016/0379-6787(91)90066-X}} and bipolar transistors.{{Cite journal|last=Lundstrom|first=M.S.|date=November 1986|title=An Ebers-Moll model for the heterostructure bipolar transistor|journal=Solid-State Electronics|volume=29|issue=11|pages=1173–1179|doi=10.1016/0038-1101(86)90061-4|bibcode=1986SSEle..29.1173L}}{{Cite journal|last1=Maziar|first1=C.M.|last2=Klausmeier-Brown|first2=M.E.|last3=Lundstrom|first3=M.S.|date=August 1986|title=A proposed structure for collector transit-time reduction in AlGaAs/GaAs bipolar transistors|journal=IEEE Electron Device Letters|volume=7|issue=8|pages=483–485|doi=10.1109/EDL.1986.26447|issn=0741-3106|bibcode=1986IEDL....7..483M|s2cid=1762567}}{{Cite journal|last1=Dodd|first1=Paul|last2=Lundstrom|first2=Mark|date=1992-07-27|title=Minority electron transport in InP/InGaAs heterojunction bipolar transistors|journal=Applied Physics Letters|volume=61|issue=4|pages=465–467|doi=10.1063/1.107886|issn=0003-6951|bibcode=1992ApPhL..61..465D|url=https://docs.lib.purdue.edu/cgi/viewcontent.cgi?article=1142&context=ecepubs|url-access=subscription}} In 1994, with his student Greg Lush, he proposed the use of photon recycling to increase the efficiency of GaAs solar cells{{Cite journal|last1=Lush|first1=Greg|last2=Lundstrom|first2=Mark|date=May 1991|title=Thin film approaches for high-efficiency III–V cells|journal=Solar Cells|volume=30|issue=1–4|pages=337–344|doi=10.1016/0379-6787(91)90066-X}}—a concept that later produced record efficiencies in single junction solar cells.{{Cite book|last1=Kayes|first1=Brendan M.|last2=Nie|first2=Hui|last3=Twist|first3=Rose|last4=Spruytte|first4=Sylvia G.|last5=Reinhardt|first5=Frank|last6=Kizilyalli|first6=Isik C.|last7=Higashi|first7=Gregg S.|title=2011 37th IEEE Photovoltaic Specialists Conference |chapter=27.6% Conversion efficiency, a new record for single-junction solar cells under 1 sun illumination |date=June 2011|pages=000004–000008|doi=10.1109/pvsc.2011.6185831|isbn=978-1-4244-9965-6|s2cid=36964975}} His recent work extends his approach to electronic transport to thermal transport by phonons and coupled electro-thermal transport, effects that are important in the design and analysis of thermoelectric devices.{{Cite journal|last1=Kim|first1=Raseong|last2=Datta|first2=Supriyo|last3=Lundstrom|first3=Mark S.|date=February 2009|title=Influence of dimensionality on thermoelectric device performance|journal=Journal of Applied Physics|volume=105|issue=3|pages=034506–034506–6|doi=10.1063/1.3074347|issn=0021-8979|bibcode=2009JAP...105c4506K|arxiv=0811.3632|s2cid=3265587}}{{Cite journal|last1=Jeong|first1=Changwook|last2=Kim|first2=Raseong|last3=Luisier|first3=Mathieu|last4=Datta|first4=Supriyo|last5=Lundstrom|first5=Mark|date=2010-01-15|title=On Landauer versus Boltzmann and full band versus effective mass evaluation of thermoelectric transport coefficients|journal=Journal of Applied Physics|volume=107|issue=2|pages=023707–023707–7|doi=10.1063/1.3291120|issn=0021-8979|bibcode=2010JAP...107b3707J|arxiv=0909.5222|s2cid=28918391}}{{Cite journal|last1=Jeong|first1=Changwook|last2=Datta|first2=Supriyo|last3=Lundstrom|first3=Mark|date=May 2012|title=Thermal conductivity of bulk and thin-film silicon: A Landauer approach|journal=Journal of Applied Physics|volume=111|issue=9|pages=093708–093708–6|doi=10.1063/1.4710993|issn=0021-8979|bibcode=2012JAP...111i3708J|url=https://docs.lib.purdue.edu/ecepubs/143|url-access=subscription}}{{Cite journal|last1=Jeong|first1=Changwook|last2=Datta|first2=Supriyo|last3=Lundstrom|first3=Mark|date=April 2011|title=Full dispersion versus Debye model evaluation of lattice thermal conductivity with a Landauer approach|journal=Journal of Applied Physics|volume=109|issue=7|pages=073718–073718–8|doi=10.1063/1.3567111|issn=0021-8979|bibcode=2011JAP...109g3718J|s2cid=24181141}}{{Cite journal|last1=Maassen|first1=Jesse|last2=Lundstrom|first2=Mark|date=2015-01-21|title=Steady-state heat transport: Ballistic-to-diffusive with Fourier's law|journal=Journal of Applied Physics|volume=117|issue=3|pages=035104|doi=10.1063/1.4905590|issn=0021-8979|bibcode=2015JAP...117c5104M|arxiv=1408.1631|s2cid=119113639}}

In 1995 with his colleagues Nirav Kapadia and Jose A.B. Fortes, Lundstrom created PUNCH – the Purdue University Network Computing Hub,{{Cite web|url=https://nanohub.org/about/middleware|title=nanoHUB.org - The Chronology of nanoHUB Middleware|website=nanohub.org|access-date=2019-08-19}} which provided access to scientific simulations through a web browser, and was an early example of cloud computing. As founding director of the National Science Foundation-funded Network for Computational Nanotechnology,{{Cite web|url=https://www.nsf.gov/awardsearch/showAward?AWD_ID=0228390|title=NSF Award Search: Award#0228390 - Network for Computational Nanotechnology|website=www.nsf.gov|access-date=2019-08-19}} Lundstrom created the nanoHUB in 2000. The nanoHUB has grown into a major online resource for nanoelectronics, offering researchers, educators and students online access to sophisticated electronic device simulations as well as open-content educational resources.{{Cite journal|last1=Klimeck|first1=Gerhard|last2=McLennan|first2=Michael|last3=Brophy|first3=Sean P.|last4=Adams III|first4=George B.|last5=Lundstrom|first5=Mark S.|date=September 2008|title=nanoHUB.org: Advancing Education and Research in Nanotechnology|journal=Computing in Science & Engineering|volume=10|issue=5|pages=17–23|doi=10.1109/MCSE.2008.120|issn=1521-9615|bibcode=2008CSE....10e..17K|s2cid=2020684|url=https://docs.lib.purdue.edu/nanodocs/80|url-access=subscription}}{{Cite journal|last1=Lundstrom|first1=Mark|last2=Klimeck|first2=Gerhard|last3=Adams|first3=George|last4=McLennan|first4=Michael|date=March 2008|title=HUB is where the heart is|journal=IEEE Nanotechnology Magazine|volume=2|issue=1|pages=28–31|doi=10.1109/MNANO.2008.920959|s2cid=10204195|issn=1932-4510}} Most of the one million plus annual visitors to the nanoHUB access its educational resources.{{Cite web|url=https://nanohub.org/usage|title=nanoHUB.org - Usage: Overview|website=nanohub.org|access-date=2019-08-19}} Lundstrom is a major contributor to nanoHUB content. More than 500,000 individuals have viewed his seminars, tutorials, and courses on nanoHUB.org.{{Cite web|url=https://nanohub.org/members/2862/usage|title=nanoHUB.org - Members: View: Mark Lundstrom|website=nanohub.org|access-date=2019-08-19}}

In 2012, Lundstrom launched nanoHUB-U to provide free, online short courses on topics that were not yet widely taught. The goal of nanoHUB-U is to help students and working engineers acquire the breadth needed for the increasingly diverse electronics of the 21st Century – without requiring a long string of prerequisites.{{Cite web|url=https://nanohub.org/groups/u/faqs|title=Group: nanoHUB-U ~ FAQS|website=nanohub.org|access-date=2019-08-19}} To complement nanoHUB-U, Lundstrom established the Lessons from Nanoscience{{cite web | url=https://www.worldscientific.com/series/lnlns | title=Lessons from Nanoscience: A Lecture Notes Series }} Lecture Notes Series (World Scientific). In addition to bringing new content into the curriculum, the goal was to re-think the way traditional topics are understood so that working from the nanoscale to the system scale is seamless and intuitive.

On December 12, 2019, Lundstrom was named Acting Dean of the College of Engineering at Purdue University and served in that role until December 2020.{{Cite web|url=https://www.purdue.edu/newsroom/releases/2019/Q4/purdue-names-mark-lundstrom-acting-dean-for-college-of-engineering.html|title=Purdue names Mark Lundstrom acting dean for College of Engineering|last=Service|first=Purdue News|website=www.purdue.edu|language=en|access-date=2019-12-17}} He currently serves as Special Advisor on Microelectronics to the Executive Vice President for Strategic Initiatives at Purdue University.{{Cite web |title=Dr. Mark Lundstrom |url=https://techdiplomacy.org/fellows/dr-mark-lundstrom/ |access-date=2022-05-17 |website=Krach Institute for Tech Diplomacy at Purdue |language=en}}

Awards

Lundstrom is the recipient of numerous awards. He was elected to the National Academy of Engineering in 2009 “For leadership in microelectronics and nanoelectronics through research, innovative education, and unique applications of cyberinfrastructure.”{{Cite web|url=https://nae.edu/30156/Dr-Mark-S-Lundstrom|title=Dr. Mark S. Lundstrom|website=NAE Website|access-date=2019-08-19}} He was elected Fellow of the Institute of Electrical and Electronics Engineers (IEEE) in 1994 and elevated to Life Fellow status in 2017. Lundstrom was elected Fellow of the American Physical Society (APS) in 2000 “For insights into the physics of carrier transport in small semiconductor devices and the development of simple, conceptual models for nanoscale transistors.”{{Cite web|url=https://www.aps.org/units/fiap/fellowship/index.cfm|title=APS Fellowship|website=www.aps.org|access-date=2019-08-19}} He was elected Fellow of the American Association for the Advancement of Science (AAAS) in 2006 “For outstanding contributions in the area of simulating nanoscale metal-oxide-field-effect transistors, and for providing these simulations to users worldwide through the Internet.”{{Cite web|url=https://www.aaas.org/fellows/listing|title=Elected Fellows|website=American Association for the Advancement of Science|access-date=2019-08-19}} In 2014, Lundstrom was included on the Thomson Reuters Corporation's list of The World’s Most Influential Scientific Minds.{{Cite web|url=https://engineering.nd.edu/news-publications/engineering-in-the-news/engineering-in-the-news-2014/indiana-thinkers-make-most-influential-minds-list|title=Indiana Thinkers Make 'Most Influential Minds' List — College of Engineering|website=engineering.nd.edu|access-date=2019-08-19}}

Lundstrom has received two IEEE technical field awards: The 2002 IEEE Cledo Brunetti Award “For significant contributions to the understanding and innovative simulation of nano-scale electronic devices”{{Cite web|url=https://www.ieee.org/content/dam/ieee-org/ieee/web/org/about/awards/recipients/brunetti_rl.pdf|title=IEEE CLEDO BRUNETTI AWARD RECIPIENTS|last=|first=|date=|website=Institute of Electrical and Electronics Engineers (IEEE)|archive-url=https://web.archive.org/web/20180804200901/https://www.ieee.org/content/dam/ieee-org/ieee/web/org/about/awards/recipients/brunetti_rl.pdf|url-status=dead|archive-date=August 4, 2018|access-date=August 10, 2019}} and the 2018 IEEE Leon K. Kirchmayer Graduate Teaching Award “For creating a global online community for graduate education in nanotechnology as well as teaching, inspiring, and mentoring graduate students.”{{Cite web|url=https://www.ieee.org/content/dam/ieee-org/ieee/web/org/about/awards/recipients/graduate_rl.pdf|title=IEEE LEON K. KIRCHMAYER GRADUATE TEACHING AWARD RECIPIENTS|last=|first=|date=|website=Institute of Electrical and Electronics Engineers (IEEE)|archive-url=https://web.archive.org/web/20191209180338/https://www.ieee.org/content/dam/ieee-org/ieee/web/org/about/awards/recipients/graduate_rl.pdf|url-status=dead|archive-date=December 9, 2019|access-date=August 9, 2019}} Lundstrom’s contributions to the semiconductor industry have been recognized by the Semiconductor Research Corporation’s Research Excellence Award (2002) “For creative, consistent contributions to the field of device physics and simulation of nanoscale MOSFETs”{{Cite web|url=https://www.src.org/award/tech-excellence/2001/|title=2001 Technical Excellence Award - SRC|website=www.src.org|access-date=2019-08-19}} and by the Semiconductor Industry Association’s University Researcher Award (2005).{{Cite web|url=https://www.src.org/award/university-researcher/|title=University Researcher Award - SRC|website=www.src.org|access-date=2019-08-19}}

Lundstrom has also received awards for his contributions to education. He was the inaugural recipient of the IEEE Electron Device Society’s Education Award in 2006.{{Cite web|url=https://eds.ieee.org/awards/education-award|archive-url=https://web.archive.org/web/20190525102139/https://eds.ieee.org/awards/education-award|url-status=dead|archive-date=May 25, 2019|title=Education Award - IEEE Electron Devices Society|website=IEEE|access-date=2019-08-19}} In 2010, Lundstrom received the Aristotle Award from the Semiconductor Research Corporation, which recognizes outstanding teaching in its broadest sense.{{Cite web|url=https://www.src.org/award/aristotle/2010/|title=2010 Aristotle Award Winner - SRC|website=www.src.org|access-date=2019-08-19}} He received the IEEE Aldert van der Ziel Award in 2009{{Cite web|url=https://engineering.purdue.edu/Engr/AboutUs/News/Announcements/Lundstrom-Receives-IEEE-Award|title=Mark Lundstrom Receives IEEE Aldert van der Ziel Award|website=College of Engineering - Purdue University|access-date=2019-08-19}} and the Frederick Emmons Terman Award from the American Society of Engineering Education in 1993.

Lundstrom’s contributions have also been recognized by Purdue University. In 2012, he received Purdue University’s Morrill Award, which is the highest honor the university confers on faculty in recognition of contributions to all three dimensions of a land grant university – teaching, research and engagement.{{Cite web|url=https://www.purdue.edu/provost/faculty/morrill-awards.html|title=Morrill Awards - Office of the Provost - Purdue University|website=www.purdue.edu|access-date=2019-08-19}} Lundstrom also received the A. A. Potter Best Teacher Award from the College of Engineering in 1996{{Cite web|url=https://engineering.purdue.edu/ECE/People/Teaching_awards/potter_award|title=A.A. Potter Best Teacher Award|website=Electrical and Computer Engineering - Purdue University|access-date=2019-08-19}} and the D.D. Ewing Teaching Award from the School of Electrical Engineering in 1995.{{Cite web|url=https://engineering.purdue.edu/ECE/People/awards|title=Faculty Teaching Awards|website=Electrical and Computer Engineering - Purdue University|access-date=2019-08-19}}

References

{{Reflist}}

Books

  • [https://www.cambridge.org/core/books/fundamentals-of-carrier-transport/FD2F0F2ACB395F9920F9692726431EC4 Fundamentals of Carrier Transport], Vol. X of the Modular Series on Solid State Devices, Addison-Wesley Publishing Co. Reading, MA, 1990. (Second Ed. published by Cambridge University Press, October, 2000) {{ISBN|978-0-521-63724-4}}
  • [https://www.springer.com/gp/book/9780387280028 Nanoscale Transistors: Physics, Modeling, and Simulation] (with Jing Guo), Springer, New York, 2006. {{ISBN|978-0-387-28002-8}}
  • [https://www.worldscientific.com/worldscibooks/10.1142/7975 Near-equilibrium Transport: Fundamentals and Applications] (with Changwook Jeong), World Scientific, Singapore, 2013. {{ISBN|978-981-4327-78-7}}
  • [https://www.worldscientific.com/worldscibooks/10.1142/9018 Fundamentals of Nanotransistors] World Scientific, Singapore, 2017. {{ISBN|978-981-4571-72-2|}}