Scandium nitride

{{Chembox

| Name =

| ImageFile = NaCl_polyhedra.svg

| ImageSize =

| ImageAlt =

| IUPACName = Scandium nitride

| OtherNames = Azanylidynescandium
Nitridoscandium

| SystematicName =

| Section1 = {{Chembox Identifiers

| CASNo = 25764-12-9

| PubChem = 117629

| EC_number = 247-247-2

| ChemSpiderID = 105117

| StdInChI = InChI=1S/N.Sc

| StdInChIKey = CUOITRGULIVMPC-UHFFFAOYSA-N

| SMILES = N#[Sc]

}}

| Section2 = {{Chembox Properties

| Formula = ScN

| MolarMass = 58.963

| Appearance =

| Density = 4.4 g/cm³

| MeltingPtC = 2600

| MeltingPt_notes =

| BoilingPt =

| Solubility =

}}

| Section3 = {{Chembox Hazards

| MainHazards =

| NFPA-F =

| NFPA-H =

| NFPA-R =

| NFPA-S =

| AutoignitionPt =

| GHSPictograms = {{GHS07}}

| GHSSignalWord = Danger

| HPhrases = {{H-phrases|228}}

| PPhrases =

}}

| Section4 =

| Section5 =

| Section6 =

| Section9 = {{Chembox Related

| OtherAnions = Scandium phosphide
Scandium arsenide
Scandium antimonide
Scandium bismuthide

| OtherCations = Yttrium nitride
Lutetium nitride

| OtherFunction =

| OtherFunction_label =

| OtherCompounds =

}}

}}

Scandium nitride (ScN) is a binary III-V indirect bandgap semiconductor. It is composed of the scandium cation and the nitride anion. It forms crystals that can be grown on tungsten foil through sublimation and recondensation.{{cite journal |last1=Gu |first1=Zheng |last2=Edgar |first2=J H |last3=Pomeroy |first3=J |last4=Kuball |first4=M |last5=Coffey |first5=D W |title=Crystal Growth and Properties of Scandium Nitride |journal= Journal of Materials Science: Materials in Electronics|date=August 2004 |volume=15 |issue=8 |pages=555–559 |doi=10.1023/B:JMSE.0000032591.54107.2c |s2cid=98462001 }} It has a rock-salt crystal structure with lattice constant of 0.451 nanometer, an indirect bandgap of 0.9 eV and direct bandgap of 2 to 2.4 eV.{{Cite journal|last1=Biswas|first1=Bidesh|last2=Saha|first2=Bivas|date=2019-02-14|title=Development of semiconducting ScN|url=http://dx.doi.org/10.1103/physrevmaterials.3.020301|journal=Physical Review Materials|volume=3|issue=2|page=020301 |doi=10.1103/physrevmaterials.3.020301|bibcode=2019PhRvM...3b0301B |s2cid=139544303 |issn=2475-9953|url-access=subscription}} These crystals can be synthesized by dissolving nitrogen gas with indium-scandium melts, magnetron sputtering, MBE, HVPE and other deposition methods.{{cite journal |last1=Zhang |first1=Guodong |last2=Kawamura |first2=Fumio |last3=Oshima |first3=Yuichi |last4=Villora |first4=Encarnacion |last5=Shimamura |first5=Kiyoshi |title=Synthesis of Scandium Nitride Crystals from Indium–Scandium Melts |journal=International Journal of Applied Ceramic Technology |date=4 August 2016 |volume=13 |issue=6 |pages=1134–1138 |doi=10.1111/ijac.12576 }} Scandium nitride is also an effective gate for semiconductors on a silicon dioxide (SiO₂) or hafnium dioxide (HfO₂) substrate.{{cite journal |last1=Yang |first1=Hyundoek |last2=Heo |first2=Sungho |last3=Lee |first3=Dongkyu |last4=Choi |first4=Sangmoo |last5=Hwang |first5=Hyunsang |title=Effective Work Function of Scandium Nitride Gate Electrodes on SiO₂ and HfO₂ |journal=Japanese Journal of Applied Physics |date=13 January 2006 |volume=45 |issue=2 |pages=L83–L85 |doi=10.1143/JJAP.45.L83 |bibcode=2006JaJAP..45L..83Y |s2cid=121206924 }} Scandium nitride is the first nitride semiconductor reported to be synthesized without an active Nitrogen plasma source using the Molecular Beam Epitaxy (MBE) technique.{{Cite journal |last=Savant |first=Chandrashekhar P. |last2=Verma |first2=Anita |last3=Nguyen |first3=Thai-Son |last4=van Deurzen |first4=Len |last5=Chen |first5=Yu-Hsin |last6=He |first6=Zhiren |last7=Rezaie |first7=Salva S. |last8=Gollwitzer |first8=Jakob |last9=Gregory |first9=Benjamin |last10=Sarker |first10=Suchismita |last11=Ruff |first11=Jacob |last12=Khalsa |first12=Guru |last13=Singer |first13=Andrej |last14=Muller |first14=David A. |last15=Xing |first15=Huili G. |date=2024-11-06 |title=Self-activated epitaxial growth of ScN films from molecular nitrogen at low temperatures |url=https://doi.org/10.1063/5.0222995 |journal=APL Materials |volume=12 |issue=11 |pages=111108 |doi=10.1063/5.0222995 |issn=2166-532X}}