Short-channel effect
In electronics, short-channel effects occur in MOSFETs in which the channel length is comparable to the depletion layer widths of the source and drain junctions. These effects include, in particular, drain-induced barrier lowering, velocity saturation, quantum confinement and hot carrier degradation.
{{cite web
| author = F. D’Agostino, D. Quercia
| title = Short-Channel Effects in MOSFETs
| url = http://www.cs.ucl.ac.uk/staff/ucacdxq/projects/vlsi/report.pdf