Short-channel effect

In electronics, short-channel effects occur in MOSFETs in which the channel length is comparable to the depletion layer widths of the source and drain junctions. These effects include, in particular, drain-induced barrier lowering, velocity saturation, quantum confinement and hot carrier degradation.

{{cite web

| author = F. D’Agostino, D. Quercia

| title = Short-Channel Effects in MOSFETs

| url = http://www.cs.ucl.ac.uk/staff/ucacdxq/projects/vlsi/report.pdf

}}[http://ecee.colorado.edu/~bart/book/book/chapter7/ch7_7.htm Principles of Semiconductor Devices. 7.7. Advanced MOSFET issues]

See also

References

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Category:MOSFETs

Category:Transistor modeling

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