Static induction thyristor
{{Short description|Type of thyristor device}}
The static induction thyristor (SIT, SITh) is a thyristor with a buried gate structure in which the gate electrodes are placed in n-base region. Since they are normally on-state, gate electrodes must be negatively or anode biased to hold off-state.{{cite book|url=https://www.tib.eu/en/search/id/tema%3ATEMAE96016025009/Study-of-40-A-1000-V-static-induction-thyristor/|title=Study of 40 A / 1000 V static induction thyristor (SITH)|year=1994|volume=1|pages=205–208|author=Li, Siyuan|author2=Liu Su|author3=Yang, Jianhong|author4=Sang, Baosheng|author5=Liu, Ruixi|publisher=International Academic Publishers|location=Beijing, China|isbn=978-7-80003-315-5}} It has low noise, low distortion, high audio frequency power capability. The turn-on and turn-off times are very short, typically 0.25 microseconds.{{cite journal|url=https://hal.archives-ouvertes.fr/jpa-00244534/document|author=J. Nishizawa|author2=K. Nakamura|title=Static induction thyristor|journal=Revue de Physique Appliquée|year=1978|volume=13|issue=12|pages=725–728|doi=10.1051/rphysap:019780013012072500}}{{cite journal|author=ChunJuan Liu|author2=Su Liu|author3=YaJie Bai|title=Switching performances of static induction thyristor with buried-gate structure|journal=Science China Information Sciences|year=2014|volume=57|issue=6|pages=1–6|doi=10.1007/s11432-013-4955-x|doi-access=free}}{{cite journal|title=Study of Switching Characteristics of Static Induction Thyristor for Pulsed Power Applications|author=Bongseong Kim|author2=Kwang-Cheol Ko|author3=Eiki Hotta|journal=IEEE Transactions on Plasma Science|volume=39|issue=5|year=2011|pages=901–905|doi=10.1109/TPS.2010.2099242|issn=0093-3813|eissn=1939-9375|oclc=630064521|bibcode=2011ITPS...39..901K|s2cid=32745943 }}
History
The first static induction thyristor was invented by Japanese engineer Jun-ichi Nishizawa in 1975.{{Cite book | url=https://books.google.com/books?id=e35kJYAlyCgC&pg=PA231 |title = Electronic Inventions and Discoveries: Electronics from its earliest beginnings to the present day, Fourth Edition|isbn = 9780750304931|last1 = a Drummer|first1 = G. W.|date = January 1997| publisher=CRC Press }} It was capable of conducting large currents with a low forward bias and had a small turn-off time. It had a self controlled gate turn-off thyristor that was commercially available through Tokyo Electric Co. (now Toyo Engineering Corporation) in 1988. The initial device consisted of a p+nn+ diode and a buried p+ grid.{{cn|date=September 2023}}
In 1999, an analytical model of the SITh was developed for the PSPICE circuit simulator.{{cite journal|author=J. Wang|author2=B.W. Williams|title=A new static induction thyristor (SITh) analytical model|journal=IEEE Transactions on Power Electronics|year=1999|volume=14|issue=5|pages=866–876|doi=10.1109/63.788483|eissn=1941-0107|oclc=1004551313|bibcode=1999ITPE...14..866W}} In 2010, a newer version of SITh was developed by Zhang Caizhen, Wang Yongshun, Liu Chunjuan and Wang Zaixing, the new feature of which was its high forward blocking voltage.{{cite journal|author=Zhang Caizhen|author2=Wang Yongshun|author3=Liu Chunjuan|author4=Wang Zaixing|title=A new static induction thyristor with high forward blocking voltage and excellent switching performances|journal=Journal of Semiconductors|volume=31|pages = 034005|number=3|year=2010|doi=10.1088/1674-4926/31/3/034005|s2cid=250665918 |issn=1674-4926|oclc=827111246}}
See also
References
{{Reflist}}
{{Electronic components}}
External links
- [http://www.eeeguide.com/static-induction-thyristor/ Static induction thyristor]
{{DEFAULTSORT:Sit/Sith (Static Induction Transistor/Thyristor)}}
Category:Semiconductor devices
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