Strained silicon directly on insulator

{{Refimprove|date=March 2016}}

Strained silicon directly on insulator (SSDOI) is a procedure developed by IBM which removes the silicon germanium layer in the strained silicon process leaving the strained silicon directly on the insulator. In contrast, strained silicon on SGOI provides a strained silicon layer on a relaxed silicon germanium layer on an insulator, as developed by MIT.{{Cite journal|url=https://www.researchgate.net/publication/255604275|title=Strained-Si-on-insulator (SSOI) and SiGe-on-insulator (SGOI): Fabrication obstacles and solutions|journal=MRS Proceedings|year=2002|doi=10.1557/PROC-745-N4.7|access-date=2016-03-11|last1=Taraschi|first1=Gianni|last2=Pitera|first2=Arthur J.|last3=McGill|first3=Lisa M.|last4=Cheng|first4=Zhi-Yuan|last5=Lee|first5=Minjoo L.|last6=Langdo|first6=Thomas A.|last7=Fitzgerald|first7=Eugene A.|volume=745}}