1 μm process
{{Short description|Semiconductor manufacturing process}}
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The 1 μm process (1 micrometer process) is a level of MOSFET semiconductor process technology that was commercialized around the 1984–1986 timeframe,{{cite web|last=Mueller |first=S |title=Microprocessors from 1971 to the Present |publisher=informIT |date=2006-07-21 |url=http://www.informit.com/articles/article.aspx?p=482324&seqNum=2 |access-date=2012-05-11 |archive-url=https://web.archive.org/web/20150419173143/http://www.informit.com/articles/article.aspx?p=482324&seqNum=2 |archive-date=2015-04-19 |url-status=live }}{{cite web|last=Myslewski |first=R |title=Happy 40th birthday, Intel 4004! |publisher=TheRegister |date=2011-11-15 |url=https://www.theregister.co.uk/Print/2011/11/15/the_first_forty_years_of_intel_microprocessors/ |access-date=2015-04-19 |archive-url=https://web.archive.org/web/20150419173435/http://www.theregister.co.uk/Print/2011/11/15/the_first_forty_years_of_intel_microprocessors/ |archive-date=2015-04-19 |url-status=live }} by companies like NTT, NEC, Intel and IBM. It was the first process where CMOS was common (as opposed to NMOS).
The 1 μm process refers to the minimum size that could be reliably produced. The smallest transistors and other circuit elements on a chip made with this process were around 1 micrometers wide.
The earliest MOSFET with a 1{{nbsp}}μm NMOS channel length was fabricated by a research team led by Robert H. Dennard, Hwa-Nien Yu and F.H. Gaensslen at the IBM T.J. Watson Research Center in 1974.{{cite journal |last1=Dennard |first1=Robert H. |author1-link=Robert H. Dennard |last2=Yu |first2=Hwa-Nien |last3=Gaensslen |first3=F. H. |last4=Rideout |first4=V. L. |last5=Bassous |first5=E. |last6=LeBlanc |first6=A. R. |title=Design of ion-implanted MOSFET's with very small physical dimensions |journal=IEEE Journal of Solid-State Circuits |date=October 1974 |volume=9 |issue=5 |pages=256–268 |doi=10.1109/JSSC.1974.1050511 |bibcode=1974IJSSC...9..256D |s2cid=283984 |url=http://www.eng.auburn.edu/~agrawvd/COURSE/READING/LOWP/Design%20of%20ion-implanted%20MOSFETs%20with%20very%20small%20physical%20dimensions.pdf}}
Products featuring 1.0 μm manufacturing process
- NTT introduced the 1{{nbsp}}μm process for its DRAM memory chips, including its 64k{{nbsp}}in 1979 and 256k{{nbsp}}in 1980.{{cite web |last1=Gealow |first1=Jeffrey Carl |title=Impact of Processing Technology on DRAM Sense Amplifier Design |url=https://core.ac.uk/download/pdf/4426308.pdf |publisher=Massachusetts Institute of Technology |via=CORE |date=10 August 1990 |pages=149–166 |access-date=25 June 2019}}
- NEC's 1{{nbsp}}Mbit DRAM memory chip was manufactured with the 1{{nbsp}}μm process in 1984.{{cite web|url=http://maltiel-consulting.com/Semiconductor_technology_memory.html|title=Memory|website=STOL (Semiconductor Technology Online)|access-date=25 June 2019}}
- Intel 80386 CPU launched in 1985 was manufactured using this process.
- Intel uses this process on the CHMOS III-E technology.Intel Corporation, "New Product Focus: Components: Two-and Four-Megabit EPROMs are High-Density Performers", Microcomputer Solutions, September/October 1989, page 14
- Intel uses this process on the CHMOS IV technology.Intel Corporation, "New Product Focus: Components: New ASSP Suits Mobile Applications", Microcomputer Solutions, September/October 1990, page 11
References
External links
- [https://www.theregister.co.uk/2011/11/15/the_first_forty_years_of_intel_microprocessors/print.html Brief timeline of microprocessor development]
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