binary compounds of silicon

{{Short description|Any binary chemical compound containing just silicon and another chemical element}}

File:Diagramme binaire Fe Si analyse thermique 30.svg

Binary compounds of silicon are binary chemical compounds containing silicon and one other chemical element.Inorganic chemistry, Egon Wiberg, Nils Wiberg, Arnold Frederick Holleman Technically the term silicide is reserved for any compounds containing silicon bonded to a more electropositive element. Binary silicon compounds can be grouped into several classes. Saltlike silicides are formed with the electropositive s-block metals. Covalent silicides and silicon compounds occur with hydrogen and the elements in groups 10 to 17.

Transition metals form metallic silicides, with the exceptions of silver, gold and the group 12 elements. The general composition is M_nSi or MSi_n with n ranging from 1 to 6 and M standing for metal. Examples are M₅Si, M₃Si (Cu, V, Cr, Mo, Mn, Fe, Pt, U), M₂Si (Zr, Hf, Ta, Ir, Ru, Rh, Co, Ni, Ce), M₃Si₂ (Hf, Th, U), MSi (Ti, Zr, Hf, Fe, Ce, Th, Pu) and MSi₂ (Ti, V, Nb, Ta, Cr, Mo, W, Re).

The Kopp–Neumann law applies; heat capacities are linear in the proportion of silicon: $C_p(\ce{M_xSi_y})=xC_p(\ce{M})+yC_p(\ce{Si})$

As a general rule, nonstochiometry implies instability. These intermetallics are in general resistant to hydrolysis, brittle, and melt at a lower temperature than the corresponding carbides or borides. They are electrical conductors. However, some, such as CrSi₂, Mg₂Si, β-FeSi₂ and MnSi_1.7, are semiconductors. Since degenerate semiconductors exhibit some metallic properties, such as luster and electrical conductivity which decreases with temperature, some silicides classified as metals may be semiconductors.

Group 1

Silicides of group 1 elements are saltlike silicides, except for silane (SiH₄) whose bonds to hydrogen are covalent. Higher silane homologues are disilane and trisilane. Polysilicon hydride is a two-dimensional polymer network.

Many cluster compounds of lithium silicides are known, such as Li₁₃Si₄, Li₂₂Si₅, Li₇Si₃ and Li₁₂Si₇.{{cite journal | last=Okamoto | first=H. | title=The Li-Si (Lithium-Silicon) system | journal=Bulletin of Alloy Phase Diagrams | publisher=Springer Science and Business Media LLC | volume=11 | issue=3 | year=1990 | issn=0197-0216 | doi=10.1007/bf03029305 | pages=306–312}} Li_4.4Si is prepared from silicon and lithium metal in high-energy Ball mill process.Solid state ionics for batteries, Tsutomu Minami, Masahiro Tatsumisago Potential uses include electrodes in lithium batteries. Li₁₂Si₇ has a Zintl phase with planar Si₅⁶⁻ rings. Li NMR spectroscopy suggests these rings are aromatic.{{cite journal | last1=Dupke | first1=Sven | last2=Langer | first2=Thorsten | last3=Pöttgen | first3=Rainer | last4=Winter | first4=Martin | last5=Eckert | first5=Hellmut | title=Structural and dynamic characterization of Li₁₂Si₇ and Li₁₂Ge₇ using solid state NMR | journal=Solid State Nuclear Magnetic Resonance | publisher=Elsevier BV | volume=42 | year=2012 | issn=0926-2040 | doi=10.1016/j.ssnmr.2011.09.002 | pages=17–25| pmid=21996453 }}

Other group 1 elements also form clusters: sodium silicide can be represented by NaSi, NaSi₂ and Na₁₁Si₃₆{{cite journal | last1=Songster | first1=J | last2=Pelton | first2=A.D | title=The na-si (sodium-silicon) system | journal=Journal of Phase Equilibria | publisher=Springer Science and Business Media LLC | volume=13 | issue=1 | year=1992 | issn=1054-9714 | doi=10.1007/bf02645381 | pages=67–69| s2cid=95520630 }} and potassium silicide by K₈Si₄₆. Group 1 silicides are in general high melting, metallic grey, with moderate to poor electrical conductance and prepared by heating the elements. Superconducting properties have been reported for Ba₈Si₄₆.{{cite journal | last1=Yamanaka | first1=Shoji | last2=Enishi | first2=Eiji | last3=Fukuoka | first3=Hiroshi | last4=Yasukawa | first4=Masahiro | title=High-Pressure Synthesis of a New Silicon Clathrate Superconductor, Ba₈Si₄₆ | journal=Inorganic Chemistry | publisher=American Chemical Society (ACS) | volume=39 | issue=1 | date=1999-12-17 | issn=0020-1669 | doi=10.1021/ic990778p | pages=56–58| pmid=11229033 }} Several silicon Zintl ions ({{chem|Si|4|4−}}, {{chem|Si|9|4−}}, {{chem|Si|5|2−}}) are known with group 1 counterions.{{cite journal | last1=Scharfe | first1=Sandra | last2=Kraus | first2=Florian | last3=Stegmaier | first3=Saskia | last4=Schier | first4=Annette | last5=Fässler | first5=Thomas F. | title=Zintl Ions, Cage Compounds, and Intermetalloid Clusters of Group 14 and Group 15 Elements | journal=Angewandte Chemie International Edition | publisher=Wiley | volume=50 | issue=16 | date=2011-03-31 | issn=1433-7851 | doi=10.1002/anie.201001630 | pages=3630–3670| pmid=21455921 }}

Group 2

Silicides of group 2 elements are also saltlike silicides except for beryllium whose phase diagram with silicon is a simple eutectic (1085 °C @ 60% by weight silicon).{{cite journal | last=Okamoto | first=H. | title=Be-Si (Beryllium-Silicon) | journal=Journal of Phase Equilibria and Diffusion | publisher=Springer Science and Business Media LLC | volume=30 | issue=1 | date=2008-12-06 | issn=1547-7037 | doi=10.1007/s11669-008-9433-6 | pages=115| s2cid=96368677 | doi-access=free }} Again there is variation in composition: magnesium silicide is represented by Mg₂Si,{{cite journal | last1=Nayeb-Hashemi | first1=A. A. | last2=Clark | first2=J. B. | title=The Mg−Si (Magnesium-Silicon) system | journal=Bulletin of Alloy Phase Diagrams | publisher=Springer Science and Business Media LLC | volume=5 | issue=6 | year=1984 | issn=0197-0216 | doi=10.1007/bf02868321 | pages=584–592}} calcium silicide can be represented by Ca₂Si, CaSi, CaSi₂, Ca₅Si₃ and by Ca₁₄Si₁₉,{{cite journal | last1=Currao | first1=Antonio | last2=Wengert | first2=Steffen | last3=Nesper | first3=Reinhard | last4=Curda | first4=Jan | last5=Hillebrecht | first5=H. | title=Ca₁₄Si₁₉ - a Zintl Phase with a Novel Twodimensional Silicon Framework | journal=Zeitschrift für anorganische und allgemeine Chemie | publisher=Wiley | volume=622 | issue=3 | year=1996 | issn=0044-2313 | doi=10.1002/zaac.19966220319 | pages=501–508 | language=de}} strontium silicide can be represented by Sr₂Si, SrSi₂ and Sr₅Si₃{{cite journal | last1=Itkin | first1=V. P. | last2=Alcock | first2=C. B. | title=The Si-Sr (Silicon-Strontium) system | journal=Bulletin of Alloy Phase Diagrams | publisher=Springer Science and Business Media LLC | volume=10 | issue=6 | year=1989 | issn=0197-0216 | doi=10.1007/bf02877630 | pages=630–634}} and barium silicide can be represented by Ba₂Si, BaSi₂, Ba₅Si₃ and Ba₃Si₄.{{cite journal | last1=Aydemir | first1=Umut | last2=Ormeci | first2=Alim | last3=Borrmann | first3=Horst | last4=Böhme | first4=Bodo | last5=Zürcher | first5=Fabio | last6=Uslu | first6=Burcu | last7=Goebel | first7=Thorsten | last8=Schnelle | first8=Walter | last9=Simon | first9=Paul | last10=Carrillo-Cabrera | first10=Wilder | last11=Haarmann | first11=Frank | last12=Baitinger | first12=Michael | last13=Nesper | first13=Reinhard | last14=von Schnering | first14=Hans Georg | last15=Grin | first15=Yuri |display-authors=5| title=The Metallic Zintl Phase Ba3Si4- Synthesis, Crystal Structure, Chemical Bonding, and Physical Properties | journal=Zeitschrift für anorganische und allgemeine Chemie | publisher=Wiley | volume=634 | issue=10 | year=2008 | issn=0044-2313 | doi=10.1002/zaac.200800116 | pages=1651–1661}} Mg₂Si, and its solid solutions with Mg₂Ge and Mg₂Sn, are good thermoelectric materials and their figure of merit values are comparable with those of established materials.

Transition and inner transition metals

The transition metals form a wide range of silicon intermetallics with at least one binary crystalline phase. Some exceptions exist. Gold forms a eutectic at 363 °C with 2.3% silicon by weight (18% atom percent) without mutual solubility in the solid state.Constitution of Binary Alloys, second edition, Max Hansen and Kurt Anderko, McGraw-Hill Book Co., (NY NY 1958) p. 232 and EG Heath, J. of Electro Control, 11, 1961, pp 13-15 as summarized in Constitution of Binary Alloys, First Supplement, Elliott, McGraw-Hill Book Inc., (NY NY 1965) p. 103 Silver forms another eutectic at 835 °C with 11% silicon by weight, again with negligible mutual solid state solubility. In group 12 all elements form a eutectic close to the metal melting point without mutual solid-state solubility: zinc at 419 °C and > 99 atom percent zinc and cadmium at 320 °C (< 99% Cd).

Commercially relevant intermetallics are group 6 molybdenum disilicide, a commercial ceramic mostly used as an heating element. Tungsten disilicide is also a commercially available ceramic with uses in microelectronics. Platinum silicide is a semiconductor material. Ferrosilicon is an iron alloy that also contains some calcium and aluminium.

MnSi, known as brownleeite, can be found in outer space. Several Mn silicides form a Nowotny phase. Nanowires based on silicon and manganese can be synthesised from Mn(CO)₅SiCl₃ forming nanowires based on Mn₁₉Si₃₃.{{cite journal | last1=Higgins | first1=Jeremy M. | last2=Schmitt | first2=Andrew L. | last3=Guzei | first3=Ilia A. | last4=Jin | first4=Song | title=Higher Manganese Silicide Nanowires of Nowotny Chimney Ladder Phase | journal=Journal of the American Chemical Society | publisher=American Chemical Society (ACS) | volume=130 | issue=47 | date=2008-11-05 | issn=0002-7863 | doi=10.1021/ja8065122 | pages=16086–16094| pmid=18983151 | bibcode=2008JAChS.13016086H }} or grown on a silicon surface{{cite journal | last1=Wang | first1=Dan | last2=Zou | first2=Zhi-Qiang | title=Formation of manganese silicide nanowires on Si(111) surfaces by the reactive epitaxy method | journal=Nanotechnology | publisher=IOP Publishing | volume=20 | issue=27 | date=2009-06-17 | issn=0957-4484 | doi=10.1088/0957-4484/20/27/275607 | page=275607| pmid=19531857 | bibcode=2009Nanot..20A5607W | s2cid=35197350 }}

{{cite journal | last1=Krause | first1=M. R. | last2=Stollenwerk | first2=A. | last3=Licurse | first3=M. | last4=LaBella | first4=V. P. | title=Ostwald ripening of manganese silicide islands on Si(001) | journal=Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films | publisher=American Vacuum Society | volume=24 | issue=4 | year=2006 | issn=0734-2101 | doi=10.1116/1.2167070 | pages=1480–1483| bibcode=2006JVSTA..24.1480K }}{{cite journal | last1=Wang | first1=Jinliang | last2=Hirai | first2=Masaaki | last3=Kusaka | first3=Masahiko | last4=Iwami | first4=Motohiro | title=Preparation of manganese silicide thin films by solid phase reaction | journal=Applied Surface Science | publisher=Elsevier BV | volume=113-114 | year=1997 | issn=0169-4332 | doi=10.1016/s0169-4332(96)00823-9 | pages=53–56| bibcode=1997ApSS..113...53W }} MnSi_1.73 was investigated as thermoelectric material{{cite journal | last1=Itoh | first1=Takashi | last2=Yamada | first2=Masataka | title=Synthesis of Thermoelectric Manganese Silicide by Mechanical Alloying and Pulse Discharge Sintering | journal=Journal of Electronic Materials | publisher=Springer Science and Business Media LLC | volume=38 | issue=7 | date=2009-02-27 | issn=0361-5235 | doi=10.1007/s11664-009-0697-3 | pages=925–929| bibcode=2009JEMat..38..925I | s2cid=135674442 }} and as an optoelectronic thin film.{{cite journal | last=Mahan | first=John E. | title=The potential of higher manganese silicide as an optoelectronic thin film material | journal=Thin Solid Films | publisher=Elsevier BV | volume=461 | issue=1 | year=2004 | issn=0040-6090 | doi=10.1016/j.tsf.2004.02.090 | pages=152–159| bibcode=2004TSF...461..152M }} Single-crystal MnSi_1.73 can form from a tin-lead melt{{cite journal | last1=Solomkin | first1=F. Yu. | last2=Zaitsev | first2=V. K. | last3=Kartenko | first3=N. F. | last4=Kolosova | first4=A. S. | last5=Samunin | first5=A. Yu. | last6=Isachenko | first6=G. N. | title=Crystallization of highest manganese silicide MnSi1.71–1.75 from tin-lead solution-melt | journal=Technical Physics | publisher=Pleiades Publishing Ltd | volume=53 | issue=12 | year=2008 | issn=1063-7842 | doi=10.1134/s1063784208120190 | pages=1636–1637| bibcode=2008JTePh..53.1636S | s2cid=120204099 }}

In the frontiers of technological research, iron disilicide is becoming more and more relevant to optoelectronics, specially in its crystalline form β-FeSi₂.Wetzig, Klaus; Schneider, Claus Michael (eds.). [https://books.google.com/books?id=0LgYYj3Q1pIC Metal based thin films for electronics.]{{Dead link|date=October 2023 |bot=InternetArchiveBot |fix-attempted=yes }} Wiley-VCH, 2006 (2nd edition), p. 64. {{ISBN|3-527-40650-6}}[http://www.nature.com/nature/journal/v387/n6634/full/387686a0.html A silicon/iron-disilicide light-emitting diode operating at a wavelength of 1.5 μm.] D. Leong, M. Harry, K. J. Reeson and K. P. Homewood. Nature 387, 686-688, 12 June 1997. They are used as thin films or as nanoparticles, obtained by means of epitaxial growth on a silicon substrate.{{cite journal | last1=Rizzi | first1=A. | last2=Rösen | first2=B. N. E. | last3=Freundt | first3=D. | last4=Dieker | first4=Ch. | last5=Lüth | first5=H. | last6=Gerthsen | first6=D. | title=Heteroepitaxy of β-FeSi2on Si by gas-source MBE | journal=Physical Review B | publisher=American Physical Society (APS) | volume=51 | issue=24 | date=1995-06-15 | issn=0163-1829 | doi=10.1103/physrevb.51.17780 | pages=17780–17794| pmid=9978811 | bibcode=1995PhRvB..5117780R }}{{cite journal | last1=Mahan | first1=John E. | last2=Thanh | first2=V. Le | last3=Chevrier | first3=J. | last4=Berbezier | first4=I. | last5=Derrien | first5=J. | last6=Long | first6=Robert G. | title=Surface electron-diffraction patterns of β-FeSi₂ films epitaxially grown on silicon | journal=Journal of Applied Physics | publisher=AIP Publishing | volume=74 | issue=3 | year=1993 | issn=0021-8979 | doi=10.1063/1.354804 | pages=1747–1761| bibcode=1993JAP....74.1747M | hdl=10217/67931 | hdl-access=free }}

class="wikitable sortable collapsible" border="1"
Atomic number ! Name ! Symbol ! Group ! Period ! Block ! Phases
21 \| Scandium \| Sc \| 3 \| 4 \| d \| Sc₅Si₃, ScSi, Sc₂Si₃,{{cite journal \| last1=Kotroczo \| first1=V. \| last2=McColm \| first2=I.J. \| title=Phases in rapidly cooled scandium-silicon samples \| journal=Journal of Alloys and Compounds \| publisher=Elsevier BV \| volume=203 \| year=1994 \| issn=0925-8388 \| doi=10.1016/0925-8388(94)90744-7 \| pages=259–265}}{{cite journal \| last=Okamoto \| first=H. \| title=Comment on Sc-Si (Scandium-Silicon) \| journal=Journal of Phase Equilibria \| publisher=Springer Science and Business Media LLC \| volume=16 \| issue=5 \| year=1995 \| issn=1054-9714 \| doi=10.1007/bf02645365 \| pages=477\| s2cid=94990578 }}{{cite journal \| last=Okamoto \| first=H. \| title=Sc-Si (Scandium-Silicon) \| journal=Journal of Phase Equilibria \| publisher=Springer Science and Business Media LLC \| volume=13 \| issue=6 \| year=1992 \| issn=1054-9714 \| doi=10.1007/bf02667229 \| pages=679–681\| s2cid=93869056 }}
22 \| Titanium \| Ti \| 4 \| 4 \| d \| Ti₅Si₃, TiSi, TiSi₂, TiSi₃, Ti₆Si₄
23 \| Vanadium \| V \| 5 \| 4 \| d \| V₃Si, V₅Si₃, V₆Si₅, VSi₂, V₆Si₅{{cite journal \| last=Smith \| first=J. F. \| title=The Si−V (Silicon-Vanadium) system: Addendum \| journal=Bulletin of Alloy Phase Diagrams \| publisher=Springer Science and Business Media LLC \| volume=6 \| issue=3 \| year=1985 \| issn=0197-0216 \| doi=10.1007/bf02880413 \| pages=266–271}}
24 \| Chromium \| Cr \| 6 \| 4 \| d \| Cr₃Si, Cr₅Si₃, CrSi, CrSi₂{{cite journal \| last1=Gokhale \| first1=A. B. \| last2=Abbaschian \| first2=G. J. \| title=The Cr−Si (Chromium-Silicon) system \| journal=Journal of Phase Equilibria \| publisher=Springer Science and Business Media LLC \| volume=8 \| issue=5 \| year=1987 \| issn=1054-9714 \| doi=10.1007/bf02893156 \| pages=474–484\| s2cid=95591626 }}
25 \| Manganese \| Mn \| 7 \| 4 \| d \| MnSi, Mn₉Si₂, Mn₃Si, Mn₅Si₃, Mn₁₁Si₉
26 \| Iron \| Fe \| 8 \| 4 \| d \|FeSi₂, FeSi{{cite journal \| last1=Pauling \| first1=L. \|author-link=Linus Pauling\| last2=Soldate \| first2=A. M. \| title=The nature of the bonds in the iron silicide, FeSi, and related crystals \| journal=Acta Crystallographica \| publisher=International Union of Crystallography (IUCr) \| volume=1 \| issue=4 \| date=1948-09-01 \| issn=0365-110X \| doi=10.1107/s0365110x48000570 \| pages=212–216\| bibcode=1948AcCry...1..212P \|url=https://onlinelibrary.wiley.com/doi/epdf/10.1107/S0365110X48000570?sentby=iucr}}{{cite journal \| last1=Vočadlo \| first1=Lidunka \| last2=Price \| first2=Geoffrey D. \| last3=Wood \| first3=I. G. \| title=Crystal structure, compressibility and possible phase transitions in epsilon-FeSi studied by first-principles pseudopotential calculations \| journal=Acta Crystallographica Section B: Structural Science \| publisher=International Union of Crystallography (IUCr) \| volume=55 \| issue=4 \| date=1999-08-01 \| issn=0108-7681 \| doi=10.1107/s0108768199001214 \| pages=484–493\| pmid=10927390 }} Xifengite, Fe₂Si, Fe₃Si
27 \| Cobalt \| Co \| 9 \| 4 \| d \| CoSi, CoSi₂, Co₂Si, Co₂Si, Co₃Si{{cite journal \| last1=Walter \| first1=Dirk \| last2=Karyasa \| first2=I W. \| title=Synthesis and Characterization of Cobalt Monosilicide (CoSi) with CsCl Structure Stabilized by a β-SiC Matrix \| journal=Zeitschrift für anorganische und allgemeine Chemie \| publisher=Wiley \| volume=631 \| issue=6–7 \| year=2005 \| issn=0044-2313 \| doi=10.1002/zaac.200500050 \| pages=1285–1288 \| language=de\| doi-access=free }}{{cite journal \| last1=Ishida \| first1=K \| last2=Nishizawa \| first2=T \| last3=Schlesinger \| first3=M. E \| title=The Co-Si (Cobalt-Silicon) system \| journal=Journal of Phase Equilibria \| publisher=Springer Science and Business Media LLC \| volume=12 \| issue=5 \| year=1991 \| issn=1054-9714 \| doi=10.1007/bf02645074 \| pages=578–586\| s2cid=94983677 }}
28 \| Nickel \| Ni \| 10 \| 4 \| d \| Ni₃Si, Ni₃₁Si₁₂, Ni₂Si, Ni₃Si₂, NiSi (Nickel monosilicide), NiSi₂{{cite journal \| last1=Nash \| first1=P. \| last2=Nash \| first2=A. \| title=The Ni−Si (Nickel-Silicon) system \| journal=Bulletin of Alloy Phase Diagrams \| publisher=Springer Science and Business Media LLC \| volume=8 \| issue=1 \| year=1987 \| issn=0197-0216 \| doi=10.1007/bf02868885 \| pages=6–14}}
29 \| Copper \| Cu \| 11 \| 4 \| d \| Cu₁₇Si₃, Cu₅₆Si₁₁,Cu₅Si, Cu₃₃Si₇, Cu₄Si, Cu₁₉Si₆,Cu₃Si,Cu₈₇Si₁₃{{cite journal \| last=Schlesinger \| first=Mark E. \| title=Thermodynamics of solid transition-metal silicides \| journal=Chemical Reviews \| publisher=American Chemical Society (ACS) \| volume=90 \| issue=4 \| date=1990-06-01 \| issn=0009-2665 \| doi=10.1021/cr00102a003 \| pages=607–628}}{{cite journal \| last=Okamoto \| first=H. \| title=Cu-Si (copper-silicon) \| journal=Journal of Phase Equilibria \| publisher=Springer Science and Business Media LLC \| volume=23 \| issue=3 \| year=2002 \| issn=1054-9714 \| doi=10.1361/105497102770331857 \| pages=281–282\| s2cid=98185051 }}
30 \| Zinc \| Zn \| 12 \| 4 \| d \| eutectic{{cite journal \| last1=Olesinski \| first1=R. W. \| last2=Abbaschian \| first2=G. J. \| title=The Si-Zn (Silicon-Zinc) system \| journal=Bulletin of Alloy Phase Diagrams \| publisher=Springer Science and Business Media LLC \| volume=6 \| issue=6 \| year=1985 \| issn=0197-0216 \| doi=10.1007/bf02887156 \| pages=545–548}}
39 \| Yttrium \| Y \| 3 \| 4 \| d \| Y₅Si₃, Y₅Si₄, YSi, Y₃Si₅,{{cite journal \| last1=Gokhale \| first1=A. B. \| last2=Abbaschian \| first2=G. J. \| title=The Si−Y (Silicon-Yttrium) system \| journal=Bulletin of Alloy Phase Diagrams \| publisher=Springer Science and Business Media LLC \| volume=7 \| issue=5 \| year=1986 \| issn=0197-0216 \| doi=10.1007/bf02867814 \| pages=485–489}}{{cite journal \| last1=Pöttgen \| first1=Rainer \| last2=Hoffmann \| first2=Rolf-Dieter \| last3=Kußmann \| first3=Dirk \| title=The Binary Silicides Eu5Si3 and Yb3Si5 - Synthesis, Crystal Structure, and Chemical Bonding \| journal=Zeitschrift für anorganische und allgemeine Chemie \| publisher=Wiley \| volume=624 \| issue=6 \| year=1998 \| issn=0044-2313 \| doi=10.1002/(sici)1521-3749(199806)624:6<945::aid-zaac945>3.0.co;2-d \| pages=945–951 \| language=de}} YSi_1.4.{{cite journal \| last1=Kubata \| first1=Christof \| last2=Krumeich \| first2=Frank \| last3=Wörle \| first3=Michael \| last4=Nesper \| first4=Reinhard \| title=The Real Structure of YbSi1.4 - Commensurately and Incommensurately Modulated Silicon Substructures \| journal=Zeitschrift für anorganische und allgemeine Chemie \| publisher=Wiley \| volume=631 \| issue=2–3 \| year=2005 \| issn=0044-2313 \| doi=10.1002/zaac.200400423 \| pages=546–555 \| language=de}}
40 \| Zirconium \| Zr \| 4 \| 5 \| d \| Zr₅Si₃, Zr₅Si₄, ZrSi, ZrSi₂, Zr₃Si₂, Zr₂Si, Zr₃Si{{cite journal \| last=Okamoto \| first=H. \| title=The Si-Zr (Silicon-Zirconium) system \| journal=Journal of Phase Equilibria \| publisher=Springer Science and Business Media LLC \| volume=11 \| issue=5 \| year=1990 \| issn=1054-9714 \| doi=10.1007/bf02898272 \| pages=513–519}}
41 \| Niobium \| Nb \| 5 \| 5 \| d \| Nb₅Si₃, Nb₄Si
42 \| Molybdenum \| Mo \| 6 \| 5 \| d \| Mo₃Si, Mo₅Si₃, MoSi₂
43 \| Technetium \| Tc \| 7 \| 5 \| d \| Tc₄Si₇ (proposed){{cite journal \| last=Grin \| first=Juri N. \| title=Ein Aufbaumodell für "Chimney-Ladder"-Strukturen \| journal=Monatshefte für Chemie Chemical Monthly \| publisher=Springer Science and Business Media LLC \| volume=117 \| issue=8–9 \| year=1986 \| issn=0026-9247 \| doi=10.1007/bf00811261 \| pages=921–932 \| s2cid=94740968 \| language=de}}
44 \| Ruthenium \| Ru \| 8 \| 5 \| d \| Ru₂Si, Ru₄Si₃, RuSi, Ru₂Si₃{{cite journal \| last1=Perring \| first1=L. \| last2=Bussy \| first2=F. \| last3=Gachon \| first3=J.C. \| last4=Feschotte \| first4=P. \| title=The Ruthenium–Silicon system \| journal=Journal of Alloys and Compounds \| publisher=Elsevier BV \| volume=284 \| issue=1–2 \| year=1999 \| issn=0925-8388 \| doi=10.1016/s0925-8388(98)00911-6 \| pages=198–205}}{{cite journal \| last=Okamoto \| first=H. \| title=Ru-Si (Ruthenium-Silicon) \| journal=Journal of Phase Equilibria \| publisher=Springer Science and Business Media LLC \| volume=21 \| issue=5 \| year=2000 \| issn=1054-9714 \| doi=10.1361/105497100770339806 \| pages=498}}
45 \| Rhodium \| Rh \| 9 \| 5 \| d \| RhSi,{{cite journal \| last1=Geller \| first1=S. \| last2=Wood \| first2=E. A. \| title=The crystal structure of rhodium silicide, RhSi \| journal=Acta Crystallographica \| publisher=International Union of Crystallography (IUCr) \| volume=7 \| issue=5 \| date=1954-05-20 \| issn=0365-110X \| doi=10.1107/s0365110x54001314 \| pages=441–443\| bibcode=1954AcCry...7..441G }} Rh₂Si, Rh₅Si₃, Rh₃Si₂, Rh₂₀Si₁₃{{cite journal \| last=Schlesinger \| first=M.E \| title=The rh-si (rhodium-silicon) system \| journal=Journal of Phase Equilibria \| publisher=Springer Science and Business Media LLC \| volume=13 \| issue=1 \| year=1992 \| issn=1054-9714 \| doi=10.1007/bf02645377 \| pages=54–59\| s2cid=96736788 }}
46 \| Palladium \| Pd \| 10 \| 5 \| d \| Pd₅Si, Pd₉Si₂, Pd₃Si, Pd₂Si, PdSi{{cite journal \| last1=Baxi \| first1=H. C. \| last2=Massalski \| first2=T. B. \| title=The pdsi (palladiumsilicon) system \| journal=Journal of Phase Equilibria \| publisher=Springer Science and Business Media LLC \| volume=12 \| issue=3 \| year=1991 \| issn=1054-9714 \| doi=10.1007/bf02649925 \| pages=349–356\| s2cid=100418050 }}
47 \| Silver \| Ag \| 11 \| 5 \| d \| eutectic{{cite journal \| last1=Olesinski \| first1=R. W. \| last2=Gokhale \| first2=A. B. \| last3=Abbaschian \| first3=G. J. \| title=The Ag-Si (Silver-Silicon) system \| journal=Bulletin of Alloy Phase Diagrams \| publisher=Springer Science and Business Media LLC \| volume=10 \| issue=6 \| year=1989 \| issn=0197-0216 \| doi=10.1007/bf02877631 \| pages=635–640}}
48 \| Cadmium \| Cd \| 12 \| 5 \| d \| eutectic{{cite journal \| last1=Olesinski \| first1=R. W. \| last2=Abbaschian \| first2=G. J. \| title=The Cd-Si (Cadmium-Silicon) system \| journal=Bulletin of Alloy Phase Diagrams \| publisher=Springer Science and Business Media LLC \| volume=6 \| issue=6 \| year=1985 \| issn=0197-0216 \| doi=10.1007/bf02887152 \| pages=534–536}}
57 \| Lanthanum \| La \| \| 6 \| f \| La₅Si₃, La₃Si₂, La₅Si₄, LaSi, LaSi₂{{cite journal \| last=Okamoto \| first=H. \| title=La-Si (Lanthanum-Silicon) \| journal=Journal of Phase Equilibria and Diffusion \| publisher=Springer Science and Business Media LLC \| volume=28 \| issue=6 \| date=2007-10-10 \| issn=1547-7037 \| doi=10.1007/s11669-007-9204-9 \| pages=585\| bibcode=2007JPED...28..585O \| s2cid=98826249 }}
58 \| Cerium \| Ce \| \| 6 \| f \| Ce₅Si₃, Ce₃Si₂, Ce₅Si₄, CeSi,{{cite journal \| last1=Bulanova \| first1=M.V. \| last2=Zheltov \| first2=P.N. \| last3=Meleshevich \| first3=K.A. \| last4=Saltykov \| first4=P.A. \| last5=Effenberg \| first5=G. \| title=Cerium–silicon system \| journal=Journal of Alloys and Compounds \| publisher=Elsevier BV \| volume=345 \| issue=1–2 \| year=2002 \| issn=0925-8388 \| doi=10.1016/s0925-8388(02)00409-7 \| pages=110–115}} Ce₃Si₅, CeSi₂{{cite journal \| last1=Munitz \| first1=A. \| last2=Gokhale \| first2=A. B. \| last3=Abbaschian \| first3=G. J. \| title=The Ce-Si (Cerium-Silicon) system \| journal=Bulletin of Alloy Phase Diagrams \| publisher=Springer Science and Business Media LLC \| volume=10 \| issue=1 \| year=1989 \| issn=0197-0216 \| doi=10.1007/bf02882179 \| pages=73–78}}
59 \| Praseodymium \| Pr \| \| 6 \| f \| Pr₅Si₃, Pr₃Si₂, Pr₅Si₄, PrSi, PrSi₂{{cite journal \| last1=Gorbachuk \| first1=N. P. \| last2=Bolgar \| first2=A. S. \| last3=Blinder \| first3=A. V. \| title=Thermodynamic properties of praseodymium silicides in the temperature range 298.15-2257 K \| journal=Powder Metallurgy and Metal Ceramics \| publisher=Springer Science and Business Media LLC \| volume=36 \| issue=9–10 \| year=1997 \| issn=1068-1302 \| doi=10.1007/bf02680501 \| pages=498–501\| s2cid=94765578 }}
60 \| Neodymium \| Nd \| \| 6 \| f \| Nd₅Si₃, Nd₅Si₄, Nd₅Si₃,NdSi, Nd₃Si₄, Nd₂Si₃, NdSi_x{{cite journal \| last1=Gokhale \| first1=A. B. \| last2=Munitz \| first2=A. \| last3=Abbaschian \| first3=G. J. \| title=The Nd-Si (Neodymium-Silicon) system \| journal=Bulletin of Alloy Phase Diagrams \| publisher=Springer Science and Business Media LLC \| volume=10 \| issue=3 \| year=1989 \| issn=0197-0216 \| doi=10.1007/bf02877504 \| pages=246–251}}
61 \| Promethium \| Pm \| \| 6 \| f \|
62 \| Samarium \| Sm \| \| 6 \| f \| Sm₅Si₄, Sm₅Si₃, SmSi, Sm₃Si₅, SmSi₂{{cite journal \| last1=Gokhale \| first1=A. B. \| last2=Abbaschian \| first2=G. J. \| title=The Si-Sm (Silicon-Samarium) system \| journal=Bulletin of Alloy Phase Diagrams \| publisher=Springer Science and Business Media LLC \| volume=9 \| issue=5 \| year=1988 \| issn=0197-0216 \| doi=10.1007/bf02881960 \| pages=582–585}}
63 \| Europium \| Eu \| \| 6 \| f \|
64 \| Gadolinium \| Gd \| \| 6 \| f \| Gd₅Si₃, Gd₅Si₄, GdSi, GdSi₂{{cite journal \| last1=Gokhale \| first1=A. B. \| last2=Abbaschian \| first2=G. J. \| title=The Gd−Si (Gadolinium-Silicon) system \| journal=Bulletin of Alloy Phase Diagrams \| publisher=Springer Science and Business Media LLC \| volume=9 \| issue=5 \| year=1988 \| issn=0197-0216 \| doi=10.1007/bf02881958 \| pages=574–578}}
65 \| Terbium \| Tb \| \| 6 \| f \| Si₂Tb (terbium silicide), SiTb, Si₄Tb₅, Si₃Tb₅{{cite journal \| last=Okamoto \| first=H. \| title=Si-Tb (Silicon-Terbium) \| journal=Journal of Phase Equilibria \| publisher=Springer Science and Business Media LLC \| volume=21 \| issue=5 \| year=2000 \| issn=1054-9714 \| doi=10.1361/105497100770339824 \| pages=500}}
66 \| Dysprosium \| Dy \| \| 6 \| f \| Dy₅Si₅, DySi, DySi₂{{cite journal \| last1=Gorbachuk \| first1=Nikolai P. \| last2=Bolgar \| first2=Alexander S. \|title=The Enthalpies of DySi2 and HoSi1.67 at 298.15-2007 K\| journal=Powder Metallurgy and Metal Ceramics \| publisher=Springer Science and Business Media LLC \| volume=41 \| issue=3/4 \| year=2002 \| issn=1068-1302 \| doi=10.1023/a:1019891128273 \| pages=173–176\| s2cid=91215617 }}
67 \| Holmium \| Ho \| \| 6 \| f \| Ho₅Si₃,Ho₅Si₄,HoSi,Ho₄Si₅,HoSi₂{{cite journal \| last=Okamoto \| first=H. \| title=Ho-Si (holmium-silicon) \| journal=Journal of Phase Equilibria \| publisher=Springer Science and Business Media LLC \| volume=17 \| issue=4 \| year=1996 \| issn=1054-9714 \| doi=10.1007/bf02665570 \| pages=370–371\| s2cid=93224227 }}
68 \| Erbium \| Er \| \| 6 \| f \| Er₅Si₃, Er₅Si₄, ErSi, ErSi₂{{cite journal \| last=Okamoto \| first=H. \| title=Er-Si (erbium-silicon) \| journal=Journal of Phase Equilibria \| publisher=Springer Science and Business Media LLC \| volume=18 \| issue=4 \| year=1997 \| issn=1054-9714 \| doi=10.1007/s11669-997-0073-z \| pages=403}}
69 \| Thulium \| Tm \| \| 6 \| f \|
70 \| Ytterbium \| Yb \| \| 6 \| f \| Si_1.8Yb,Si₅Yb₃,Si₄Yb₃, SiYb, Si₄Yb₅, Si₃Yb₅{{cite journal \| last=Okamoto \| first=H. \| title=Si-Yb (Silicon-Ytterbium) \| journal=Journal of Phase Equilibria \| publisher=Springer Science and Business Media LLC \| volume=24 \| issue=6 \| year=2003 \| issn=1054-9714 \| doi=10.1361/105497103772084787 \| pages=583\| s2cid=196735476 \| doi-access=free }}
71 \| Lutetium \| Lu \| 3 \| 6 \| d \| Lu₅Si₃{{cite journal \| last1=Topor \| first1=L. \| last2=Kleppa \| first2=O.J. \| title=Standard enthalpies of formation of Me5Si3 (Me - Y, Lu, Zr) and of Hf3Si2 \| journal=Journal of the Less Common Metals \| publisher=Elsevier BV \| volume=167 \| issue=1 \| year=1990 \| issn=0022-5088 \| doi=10.1016/0022-5088(90)90292-r \| pages=91–99}}
72 \| Hafnium \| Hf \| 4 \| 6 \| d \| Hf₂Si, Hf₃Si₂, HfSi, Hf₅Si₄, HfSi₂{{cite journal \| last1=Gokhale \| first1=A. B. \| last2=Abbaschian \| first2=G. J. \| title=The Hf-Si (hafnium-silicon) system \| journal=Bulletin of Alloy Phase Diagrams \| publisher=Springer Science and Business Media LLC \| volume=10 \| issue=4 \| year=1989 \| issn=0197-0216 \| doi=10.1007/bf02877595 \| pages=390–393}}
73 \| Tantalum \| Ta \| 5 \| 6 \| d \| Ta₉Si₂, Ta₃Si, Ta₅Si₃
74 \| Tungsten \| W \| 6 \| 6 \| d \| W₅Si₃, WSi₂Tungsten: Properties, Chemistry, Technology of the Element, Alloys, and Chemical Compounds Lassner, Erik, Schubert, Wolf-Dieter 1999
75 \| Rhenium \| Re \| 7 \| 6 \| d \| Re₂Si, ReSi, ReSi_1.8{{cite journal \| last1=Gokhale \| first1=A. B. \| last2=Abbaschian \| first2=R. \| title=The Re-Si system (rhenium-silicon) \| journal=Journal of Phase Equilibria \| publisher=Springer Science and Business Media LLC \| volume=17 \| issue=5 \| year=1996 \| issn=1054-9714 \| doi=10.1007/bf02667640 \| pages=451–454\| s2cid=95014982 }} Re₅Si₃
76 \| Osmium \| Os \| 8 \| 6 \| d \| OsSi, Os₂Si₃, OsSi₂{{cite journal \| last=Okamoto \| first=H. \| title=Os-Si (Osmium-Silicon) \| journal=Journal of Phase Equilibria and Diffusion \| publisher=Springer Science and Business Media LLC \| volume=28 \| issue=4 \| date=2007-06-07 \| issn=1547-7037 \| doi=10.1007/s11669-007-9121-y \| pages=410\| bibcode=2007JPED...28..410O \| s2cid=95791114 }}
77 \| Iridium \| Ir \| 9 \| 6 \| d \| IrSi, Ir₄Si₅, Ir₃Si₄, Ir₃Si₅, IrSi₃. Ir₂Si₃, Ir₄Si₇, IrSi₂{{cite journal \| last1=Allevato \| first1=C.E. \| last2=Vining \| first2=Cronin B. \| title=Phase diagram and electrical behavior of silicon-rich iridium silicide compounds \| journal=Journal of Alloys and Compounds \| publisher=Elsevier BV \| volume=200 \| issue=1–2 \| year=1993 \| issn=0925-8388 \| doi=10.1016/0925-8388(93)90478-6 \| pages=99–105}}{{cite journal \| last1=Jeitschko \| first1=W. \| last2=Parthé \| first2=E. \| title=The crystal structure of Rh17Ga22, an example of a new kind of electron compound \| journal=Acta Crystallographica \| publisher=International Union of Crystallography (IUCr) \| volume=22 \| issue=3 \| date=1967-03-10 \| issn=0365-110X \| doi=10.1107/s0365110x67000799 \| pages=417–430\| bibcode=1967AcCry..22..417J }}
78 \| Platinum \| Pt \| 10 \| 6 \| d \| Pt₂₅Si₇, Pt₁₇Si₈, Pt₆Si₅, Pt₅Si₂, Pt₃Si, Pt₂Si, PtSi{{cite journal \| last=Okamoto \| first=H. \| title=Pt-Si (Platinum-Silicon) \| journal=Journal of Phase Equilibria \| publisher=Springer Science and Business Media LLC \| volume=16 \| issue=3 \| year=1995 \| issn=1054-9714 \| doi=10.1007/bf02667320 \| pages=286–287\| s2cid=198916454 }}
79 \| Gold \| Au \| 11 \| 6 \| d \| Eutectic diagram at link{{cite journal \| last1=Okamoto \| first1=H. \| last2=Massalski \| first2=T. B. \| title=The Au−Si (Gold-Silicon) system \| journal=Bulletin of Alloy Phase Diagrams \| publisher=Springer Science and Business Media LLC \| volume=4 \| issue=2 \| year=1983 \| issn=0197-0216 \| doi=10.1007/bf02884878 \| pages=190–198}}
80 \| Mercury \| Hg \| 12 \| 6 \| d \| eutectic{{cite journal \| last=Guminski \| first=C. \| title=The Hg-Si system (mercury-silicon) \| journal=Journal of Phase Equilibria \| publisher=Springer Science and Business Media LLC \| volume=22 \| issue=6 \| year=2001 \| issn=1054-9714 \| doi=10.1007/s11669-001-0041-y \| pages=682–683}}
89 \| Actinium \| Ac \| \| 7 \| f \|
90 \| Thorium \| Th \| \| 7 \| f \| Th₃Si₂, ThSi, Th₃Si₅, and ThSi_2−xas summarized in Constitution of Binary Alloys, Second Supplement, Francis A. Shunk, McGraw-Hill Book Inc., (NY NY 1969) p. 681-82.
91 \| Protactinium \| Pa \| \| 7 \| f \|
92 \| Uranium \| U \| \| 7 \| f \| U₃Si, U₃Si₂, USi, U₃Si₅, USi_2−x, USi₂ and USi₃{{cite conference \|url=http://www.rertr.anl.gov/Web1999/PDF/18suripto.pdf \|book-title=1999 International Meeting on Reduced Enrichment for Research and Test Reactors \|location=Budapest, Hungary \|date=October 3–8, 1999 \|title=HIGH DENSITY URANIUM SILICIDE WITH EXCESS URANIUM}}
93 \| Neptunium \| Np \| \| 7 \| f \| NpSi₃, Np₃Si₂, and NpSi{{cite journal \| last1=Boulet \| first1=Pascal \| last2=Bouëxière \| first2=Daniel \| last3=Rebizant \| first3=Jean \| last4=Wastin \| first4=Franck \| title=Structural chemistry of the neptunium–silicon binary system \| journal=Journal of Alloys and Compounds \| publisher=Elsevier BV \| volume=349 \| issue=1–2 \| year=2003 \| issn=0925-8388 \| doi=10.1016/s0925-8388(02)00918-0 \| pages=172–179}}
94 \| Plutonium \| Pu \| \| 7 \| f \| Pu₅Si₃, Pu₃Si₂, PuSi, Pu₃Si₅ and PuSi₂{{cite journal \| last1=Land \| first1=C.C. \| last2=Johnson \| first2=K.A. \| last3=Ellinger \| first3=F.H. \| title=The plutonium-silicon system \| journal=Journal of Nuclear Materials \| publisher=Elsevier BV \| volume=15 \| issue=1 \| year=1965 \| issn=0022-3115 \| doi=10.1016/0022-3115(65)90105-4 \| pages=23–32\| bibcode=1965JNuM...15...23L \| url=https://digital.library.unt.edu/ark:/67531/metadc1032796/ }}
95 \| Americium \| Am \| \| 7 \| f \| AmSi, AmSi₂{{cite journal \| last1=Weigel \| first1=F. \| last2=Wittmann \| first2=F.D. \| last3=Marquart \| first3=R. \| title=Americium monosilicide and "disilicide" \| journal=Journal of the Less Common Metals \| publisher=Elsevier BV \| volume=56 \| issue=1 \| year=1977 \| issn=0022-5088 \| doi=10.1016/0022-5088(77)90217-x \| pages=47–53}}
96 \| Curium \| Cm \| \| 7 \| f \| CmSi, Cm₂Si₃, CmSi₂{{cite journal \| last1=Weigel \| first1=F. \| last2=Marquart \| first2=R. \| title=Preparation and properties of some curium silicides \| journal=Journal of the Less Common Metals \| publisher=Elsevier BV \| volume=90 \| issue=2 \| year=1983 \| issn=0022-5088 \| doi=10.1016/0022-5088(83)90077-2 \| pages=283–290}}
97 \| Berkelium \| Bk \| \| 7 \| f \|
98 \| Californium \| Cf \| \| 7 \| f \|
99 \| Einsteinium \| Es \| \| 7 \| f \|
100 \| Fermium \| Fm \| \| 7 \| f \|
101 \| Mendelevium \| Md \| \| 7 \| f \|
102 \| Nobelium \| No \| \| 7 \| f \|
103 \| Lawrencium \| Lr \| 3 \| 7 \| d \|
104 \| Rutherfordium \| Rf \| 4 \| 7 \| d \|
105 \| Dubnium \| Db \| 5 \| 7 \| d \|
106 \| Seaborgium \| Sg \| 6 \| 7 \| d \|
107 \| Bohrium \| Bh \| 7 \| 7 \| d \|
108 \| Hassium \| Hs \| 8 \| 7 \| d \|
109 \| Meitnerium \| Mt \| 9 \| 7 \| d \|
110 \| Darmstadtium \| Ds \| 10 \| 7 \| d \|
111 \| Roentgenium \| Rg \| 11 \| 7 \| d \|
112 \| Copernicium \| Cn \| 12 \| 7 \| d \|

class="wikitable sortable collapsible" border="1"

Atomic number

! Name

! Symbol

! Group

! Period

! Block

! Phases

| Scandium

| Sc

| 3

| 4

| d

| Sc₅Si₃, ScSi, Sc₂Si₃,{{cite journal | last1=Kotroczo | first1=V. | last2=McColm | first2=I.J. | title=Phases in rapidly cooled scandium-silicon samples | journal=Journal of Alloys and Compounds | publisher=Elsevier BV | volume=203 | year=1994 | issn=0925-8388 | doi=10.1016/0925-8388(94)90744-7 | pages=259–265}}{{cite journal | last=Okamoto | first=H. | title=Comment on Sc-Si (Scandium-Silicon) | journal=Journal of Phase Equilibria | publisher=Springer Science and Business Media LLC | volume=16 | issue=5 | year=1995 | issn=1054-9714 | doi=10.1007/bf02645365 | pages=477| s2cid=94990578 }}{{cite journal | last=Okamoto | first=H. | title=Sc-Si (Scandium-Silicon) | journal=Journal of Phase Equilibria | publisher=Springer Science and Business Media LLC | volume=13 | issue=6 | year=1992 | issn=1054-9714 | doi=10.1007/bf02667229 | pages=679–681| s2cid=93869056 }}

| Titanium

| Ti

| 4

| d

| Ti₅Si₃, TiSi, TiSi₂, TiSi₃, Ti₆Si₄

| Vanadium

| V

| 5

| 4

| d

| V₃Si, V₅Si₃, V₆Si₅, VSi₂, V₆Si₅{{cite journal | last=Smith | first=J. F. | title=The Si−V (Silicon-Vanadium) system: Addendum | journal=Bulletin of Alloy Phase Diagrams | publisher=Springer Science and Business Media LLC | volume=6 | issue=3 | year=1985 | issn=0197-0216 | doi=10.1007/bf02880413 | pages=266–271}}

| Chromium

| Cr

| 6

| 4

| d

| Cr₃Si, Cr₅Si₃, CrSi, CrSi₂{{cite journal | last1=Gokhale | first1=A. B. | last2=Abbaschian | first2=G. J. | title=The Cr−Si (Chromium-Silicon) system | journal=Journal of Phase Equilibria | publisher=Springer Science and Business Media LLC | volume=8 | issue=5 | year=1987 | issn=1054-9714 | doi=10.1007/bf02893156 | pages=474–484| s2cid=95591626 }}

| Manganese

| Mn

| 7

| 4

| d

| MnSi, Mn₉Si₂, Mn₃Si, Mn₅Si₃, Mn₁₁Si₉

| Iron

| Fe

| 8

| 4

| d

|FeSi₂, FeSi{{cite journal | last1=Pauling | first1=L. |author-link=Linus Pauling| last2=Soldate | first2=A. M. | title=The nature of the bonds in the iron silicide, FeSi, and related crystals | journal=Acta Crystallographica | publisher=International Union of Crystallography (IUCr) | volume=1 | issue=4 | date=1948-09-01 | issn=0365-110X | doi=10.1107/s0365110x48000570 | pages=212–216| bibcode=1948AcCry...1..212P |url=https://onlinelibrary.wiley.com/doi/epdf/10.1107/S0365110X48000570?sentby=iucr}}{{cite journal | last1=Vočadlo | first1=Lidunka | last2=Price | first2=Geoffrey D. | last3=Wood | first3=I. G. | title=Crystal structure, compressibility and possible phase transitions in epsilon-FeSi studied by first-principles pseudopotential calculations | journal=Acta Crystallographica Section B: Structural Science | publisher=International Union of Crystallography (IUCr) | volume=55 | issue=4 | date=1999-08-01 | issn=0108-7681 | doi=10.1107/s0108768199001214 | pages=484–493| pmid=10927390 }} Xifengite, Fe₂Si, Fe₃Si

| Cobalt

| Co

| 9

| 4

| d

| CoSi, CoSi₂, Co₂Si, Co₂Si, Co₃Si{{cite journal | last1=Walter | first1=Dirk | last2=Karyasa | first2=I W. | title=Synthesis and Characterization of Cobalt Monosilicide (CoSi) with CsCl Structure Stabilized by a β-SiC Matrix | journal=Zeitschrift für anorganische und allgemeine Chemie | publisher=Wiley | volume=631 | issue=6–7 | year=2005 | issn=0044-2313 | doi=10.1002/zaac.200500050 | pages=1285–1288 | language=de| doi-access=free }}{{cite journal | last1=Ishida | first1=K | last2=Nishizawa | first2=T | last3=Schlesinger | first3=M. E | title=The Co-Si (Cobalt-Silicon) system | journal=Journal of Phase Equilibria | publisher=Springer Science and Business Media LLC | volume=12 | issue=5 | year=1991 | issn=1054-9714 | doi=10.1007/bf02645074 | pages=578–586| s2cid=94983677 }}

| Nickel

| Ni

| 10

| 4

| d

| Ni₃Si, Ni₃₁Si₁₂, Ni₂Si, Ni₃Si₂, NiSi (Nickel monosilicide), NiSi₂{{cite journal | last1=Nash | first1=P. | last2=Nash | first2=A. | title=The Ni−Si (Nickel-Silicon) system | journal=Bulletin of Alloy Phase Diagrams | publisher=Springer Science and Business Media LLC | volume=8 | issue=1 | year=1987 | issn=0197-0216 | doi=10.1007/bf02868885 | pages=6–14}}

| Copper

| Cu

| 11

| 4

| d

| Cu₁₇Si₃, Cu₅₆Si₁₁,Cu₅Si, Cu₃₃Si₇, Cu₄Si, Cu₁₉Si₆,Cu₃Si,Cu₈₇Si₁₃{{cite journal | last=Schlesinger | first=Mark E. | title=Thermodynamics of solid transition-metal silicides | journal=Chemical Reviews | publisher=American Chemical Society (ACS) | volume=90 | issue=4 | date=1990-06-01 | issn=0009-2665 | doi=10.1021/cr00102a003 | pages=607–628}}{{cite journal | last=Okamoto | first=H. | title=Cu-Si (copper-silicon) | journal=Journal of Phase Equilibria | publisher=Springer Science and Business Media LLC | volume=23 | issue=3 | year=2002 | issn=1054-9714 | doi=10.1361/105497102770331857 | pages=281–282| s2cid=98185051 }}

| Zinc

| Zn

| 12

| 4

| d

| eutectic{{cite journal | last1=Olesinski | first1=R. W. | last2=Abbaschian | first2=G. J. | title=The Si-Zn (Silicon-Zinc) system | journal=Bulletin of Alloy Phase Diagrams | publisher=Springer Science and Business Media LLC | volume=6 | issue=6 | year=1985 | issn=0197-0216 | doi=10.1007/bf02887156 | pages=545–548}}

| Yttrium

| Y

| 3

| 4

| d

| Y₅Si₃, Y₅Si₄, YSi, Y₃Si₅,{{cite journal | last1=Gokhale | first1=A. B. | last2=Abbaschian | first2=G. J. | title=The Si−Y (Silicon-Yttrium) system | journal=Bulletin of Alloy Phase Diagrams | publisher=Springer Science and Business Media LLC | volume=7 | issue=5 | year=1986 | issn=0197-0216 | doi=10.1007/bf02867814 | pages=485–489}}{{cite journal | last1=Pöttgen | first1=Rainer | last2=Hoffmann | first2=Rolf-Dieter | last3=Kußmann | first3=Dirk | title=The Binary Silicides Eu5Si3 and Yb3Si5 - Synthesis, Crystal Structure, and Chemical Bonding | journal=Zeitschrift für anorganische und allgemeine Chemie | publisher=Wiley | volume=624 | issue=6 | year=1998 | issn=0044-2313 | doi=10.1002/(sici)1521-3749(199806)624:6<945::aid-zaac945>3.0.co;2-d | pages=945–951 | language=de}} YSi_1.4.{{cite journal | last1=Kubata | first1=Christof | last2=Krumeich | first2=Frank | last3=Wörle | first3=Michael | last4=Nesper | first4=Reinhard | title=The Real Structure of YbSi1.4 - Commensurately and Incommensurately Modulated Silicon Substructures | journal=Zeitschrift für anorganische und allgemeine Chemie | publisher=Wiley | volume=631 | issue=2–3 | year=2005 | issn=0044-2313 | doi=10.1002/zaac.200400423 | pages=546–555 | language=de}}

| Zirconium

| Zr

| 4

| 5

| d

| Zr₅Si₃, Zr₅Si₄, ZrSi, ZrSi₂, Zr₃Si₂, Zr₂Si, Zr₃Si{{cite journal | last=Okamoto | first=H. | title=The Si-Zr (Silicon-Zirconium) system | journal=Journal of Phase Equilibria | publisher=Springer Science and Business Media LLC | volume=11 | issue=5 | year=1990 | issn=1054-9714 | doi=10.1007/bf02898272 | pages=513–519}}

| Niobium

| Nb

| 5

| d

| Nb₅Si₃, Nb₄Si

| Molybdenum

| Mo

| 6

| 5

| d

| Mo₃Si, Mo₅Si₃, MoSi₂

| Technetium

| Tc

| 7

| 5

| d

| Tc₄Si₇ (proposed){{cite journal | last=Grin | first=Juri N. | title=Ein Aufbaumodell für "Chimney-Ladder"-Strukturen | journal=Monatshefte für Chemie Chemical Monthly | publisher=Springer Science and Business Media LLC | volume=117 | issue=8–9 | year=1986 | issn=0026-9247 | doi=10.1007/bf00811261 | pages=921–932 | s2cid=94740968 | language=de}}

| Ruthenium

| Ru

| 8

| 5

| d

| Ru₂Si, Ru₄Si₃, RuSi, Ru₂Si₃{{cite journal | last1=Perring | first1=L. | last2=Bussy | first2=F. | last3=Gachon | first3=J.C. | last4=Feschotte | first4=P. | title=The Ruthenium–Silicon system | journal=Journal of Alloys and Compounds | publisher=Elsevier BV | volume=284 | issue=1–2 | year=1999 | issn=0925-8388 | doi=10.1016/s0925-8388(98)00911-6 | pages=198–205}}{{cite journal | last=Okamoto | first=H. | title=Ru-Si (Ruthenium-Silicon) | journal=Journal of Phase Equilibria | publisher=Springer Science and Business Media LLC | volume=21 | issue=5 | year=2000 | issn=1054-9714 | doi=10.1361/105497100770339806 | pages=498}}

| Rhodium

| Rh

| 9

| 5

| d

| RhSi,{{cite journal | last1=Geller | first1=S. | last2=Wood | first2=E. A. | title=The crystal structure of rhodium silicide, RhSi | journal=Acta Crystallographica | publisher=International Union of Crystallography (IUCr) | volume=7 | issue=5 | date=1954-05-20 | issn=0365-110X | doi=10.1107/s0365110x54001314 | pages=441–443| bibcode=1954AcCry...7..441G }} Rh₂Si, Rh₅Si₃, Rh₃Si₂, Rh₂₀Si₁₃{{cite journal | last=Schlesinger | first=M.E | title=The rh-si (rhodium-silicon) system | journal=Journal of Phase Equilibria | publisher=Springer Science and Business Media LLC | volume=13 | issue=1 | year=1992 | issn=1054-9714 | doi=10.1007/bf02645377 | pages=54–59| s2cid=96736788 }}

| Palladium

| Pd

| 10

| 5

| d

| Pd₅Si, Pd₉Si₂, Pd₃Si, Pd₂Si, PdSi{{cite journal | last1=Baxi | first1=H. C. | last2=Massalski | first2=T. B. | title=The pdsi (palladiumsilicon) system | journal=Journal of Phase Equilibria | publisher=Springer Science and Business Media LLC | volume=12 | issue=3 | year=1991 | issn=1054-9714 | doi=10.1007/bf02649925 | pages=349–356| s2cid=100418050 }}

| Silver

| Ag

| 11

| 5

| d

| eutectic{{cite journal | last1=Olesinski | first1=R. W. | last2=Gokhale | first2=A. B. | last3=Abbaschian | first3=G. J. | title=The Ag-Si (Silver-Silicon) system | journal=Bulletin of Alloy Phase Diagrams | publisher=Springer Science and Business Media LLC | volume=10 | issue=6 | year=1989 | issn=0197-0216 | doi=10.1007/bf02877631 | pages=635–640}}

| Cadmium

| Cd

| 12

| 5

| d

| eutectic{{cite journal | last1=Olesinski | first1=R. W. | last2=Abbaschian | first2=G. J. | title=The Cd-Si (Cadmium-Silicon) system | journal=Bulletin of Alloy Phase Diagrams | publisher=Springer Science and Business Media LLC | volume=6 | issue=6 | year=1985 | issn=0197-0216 | doi=10.1007/bf02887152 | pages=534–536}}

| Lanthanum

| La

| 6

| f

| La₅Si₃, La₃Si₂, La₅Si₄, LaSi, LaSi₂{{cite journal | last=Okamoto | first=H. | title=La-Si (Lanthanum-Silicon) | journal=Journal of Phase Equilibria and Diffusion | publisher=Springer Science and Business Media LLC | volume=28 | issue=6 | date=2007-10-10 | issn=1547-7037 | doi=10.1007/s11669-007-9204-9 | pages=585| bibcode=2007JPED...28..585O | s2cid=98826249 }}

| Cerium

| Ce

| 6

| f

| Ce₅Si₃, Ce₃Si₂, Ce₅Si₄, CeSi,{{cite journal | last1=Bulanova | first1=M.V. | last2=Zheltov | first2=P.N. | last3=Meleshevich | first3=K.A. | last4=Saltykov | first4=P.A. | last5=Effenberg | first5=G. | title=Cerium–silicon system | journal=Journal of Alloys and Compounds | publisher=Elsevier BV | volume=345 | issue=1–2 | year=2002 | issn=0925-8388 | doi=10.1016/s0925-8388(02)00409-7 | pages=110–115}} Ce₃Si₅, CeSi₂{{cite journal | last1=Munitz | first1=A. | last2=Gokhale | first2=A. B. | last3=Abbaschian | first3=G. J. | title=The Ce-Si (Cerium-Silicon) system | journal=Bulletin of Alloy Phase Diagrams | publisher=Springer Science and Business Media LLC | volume=10 | issue=1 | year=1989 | issn=0197-0216 | doi=10.1007/bf02882179 | pages=73–78}}

| Praseodymium

| Pr

| 6

| f

| Pr₅Si₃, Pr₃Si₂, Pr₅Si₄, PrSi, PrSi₂{{cite journal | last1=Gorbachuk | first1=N. P. | last2=Bolgar | first2=A. S. | last3=Blinder | first3=A. V. | title=Thermodynamic properties of praseodymium silicides in the temperature range 298.15-2257 K | journal=Powder Metallurgy and Metal Ceramics | publisher=Springer Science and Business Media LLC | volume=36 | issue=9–10 | year=1997 | issn=1068-1302 | doi=10.1007/bf02680501 | pages=498–501| s2cid=94765578 }}

| Neodymium

| Nd

| 6

| f

| Nd₅Si₃, Nd₅Si₄, Nd₅Si₃,NdSi, Nd₃Si₄, Nd₂Si₃, NdSi_x{{cite journal | last1=Gokhale | first1=A. B. | last2=Munitz | first2=A. | last3=Abbaschian | first3=G. J. | title=The Nd-Si (Neodymium-Silicon) system | journal=Bulletin of Alloy Phase Diagrams | publisher=Springer Science and Business Media LLC | volume=10 | issue=3 | year=1989 | issn=0197-0216 | doi=10.1007/bf02877504 | pages=246–251}}

| Promethium

| Pm

| 6

| f

| Samarium

| Sm

| 6

| f

| Sm₅Si₄, Sm₅Si₃, SmSi, Sm₃Si₅, SmSi₂{{cite journal | last1=Gokhale | first1=A. B. | last2=Abbaschian | first2=G. J. | title=The Si-Sm (Silicon-Samarium) system | journal=Bulletin of Alloy Phase Diagrams | publisher=Springer Science and Business Media LLC | volume=9 | issue=5 | year=1988 | issn=0197-0216 | doi=10.1007/bf02881960 | pages=582–585}}

| Europium

| Eu

| 6

| f

| Gadolinium

| Gd

| 6

| f

| Gd₅Si₃, Gd₅Si₄, GdSi, GdSi₂{{cite journal | last1=Gokhale | first1=A. B. | last2=Abbaschian | first2=G. J. | title=The Gd−Si (Gadolinium-Silicon) system | journal=Bulletin of Alloy Phase Diagrams | publisher=Springer Science and Business Media LLC | volume=9 | issue=5 | year=1988 | issn=0197-0216 | doi=10.1007/bf02881958 | pages=574–578}}

| Terbium

| Tb

| 6

| f

| Si₂Tb (terbium silicide), SiTb, Si₄Tb₅, Si₃Tb₅{{cite journal | last=Okamoto | first=H. | title=Si-Tb (Silicon-Terbium) | journal=Journal of Phase Equilibria | publisher=Springer Science and Business Media LLC | volume=21 | issue=5 | year=2000 | issn=1054-9714 | doi=10.1361/105497100770339824 | pages=500}}

| Dysprosium

| Dy

| 6

| f

| Dy₅Si₅, DySi, DySi₂{{cite journal | last1=Gorbachuk | first1=Nikolai P. | last2=Bolgar | first2=Alexander S. |title=The Enthalpies of DySi2 and HoSi1.67 at 298.15-2007 K| journal=Powder Metallurgy and Metal Ceramics | publisher=Springer Science and Business Media LLC | volume=41 | issue=3/4 | year=2002 | issn=1068-1302 | doi=10.1023/a:1019891128273 | pages=173–176| s2cid=91215617 }}

| Holmium

| Ho

| 6

| f

| Ho₅Si₃,Ho₅Si₄,HoSi,Ho₄Si₅,HoSi₂{{cite journal | last=Okamoto | first=H. | title=Ho-Si (holmium-silicon) | journal=Journal of Phase Equilibria | publisher=Springer Science and Business Media LLC | volume=17 | issue=4 | year=1996 | issn=1054-9714 | doi=10.1007/bf02665570 | pages=370–371| s2cid=93224227 }}

| Erbium

| Er

| 6

| f

| Er₅Si₃, Er₅Si₄, ErSi, ErSi₂{{cite journal | last=Okamoto | first=H. | title=Er-Si (erbium-silicon) | journal=Journal of Phase Equilibria | publisher=Springer Science and Business Media LLC | volume=18 | issue=4 | year=1997 | issn=1054-9714 | doi=10.1007/s11669-997-0073-z | pages=403}}

| Thulium

| Tm

| 6

| f

| Ytterbium

| Yb

| 6

| f

| Si_1.8Yb,Si₅Yb₃,Si₄Yb₃, SiYb, Si₄Yb₅, Si₃Yb₅{{cite journal | last=Okamoto | first=H. | title=Si-Yb (Silicon-Ytterbium) | journal=Journal of Phase Equilibria | publisher=Springer Science and Business Media LLC | volume=24 | issue=6 | year=2003 | issn=1054-9714 | doi=10.1361/105497103772084787 | pages=583| s2cid=196735476 | doi-access=free }}

| Lutetium

| Lu

| 3

| 6

| d

| Lu₅Si₃{{cite journal | last1=Topor | first1=L. | last2=Kleppa | first2=O.J. | title=Standard enthalpies of formation of Me5Si3 (Me - Y, Lu, Zr) and of Hf3Si2 | journal=Journal of the Less Common Metals | publisher=Elsevier BV | volume=167 | issue=1 | year=1990 | issn=0022-5088 | doi=10.1016/0022-5088(90)90292-r | pages=91–99}}

| Hafnium

| Hf

| 4

| 6

| d

| Hf₂Si, Hf₃Si₂, HfSi, Hf₅Si₄, HfSi₂{{cite journal | last1=Gokhale | first1=A. B. | last2=Abbaschian | first2=G. J. | title=The Hf-Si (hafnium-silicon) system | journal=Bulletin of Alloy Phase Diagrams | publisher=Springer Science and Business Media LLC | volume=10 | issue=4 | year=1989 | issn=0197-0216 | doi=10.1007/bf02877595 | pages=390–393}}

| Tantalum

| Ta

| 5

| 6

| d

| Ta₉Si₂, Ta₃Si, Ta₅Si₃

| Tungsten

| W

| 6

| d

| W₅Si₃, WSi₂Tungsten: Properties, Chemistry, Technology of the Element, Alloys, and Chemical Compounds Lassner, Erik, Schubert, Wolf-Dieter 1999

| Rhenium

| Re

| 7

| 6

| d

| Re₂Si, ReSi, ReSi_1.8{{cite journal | last1=Gokhale | first1=A. B. | last2=Abbaschian | first2=R. | title=The Re-Si system (rhenium-silicon) | journal=Journal of Phase Equilibria | publisher=Springer Science and Business Media LLC | volume=17 | issue=5 | year=1996 | issn=1054-9714 | doi=10.1007/bf02667640 | pages=451–454| s2cid=95014982 }} Re₅Si₃

| Osmium

| Os

| 8

| 6

| d

| OsSi, Os₂Si₃, OsSi₂{{cite journal | last=Okamoto | first=H. | title=Os-Si (Osmium-Silicon) | journal=Journal of Phase Equilibria and Diffusion | publisher=Springer Science and Business Media LLC | volume=28 | issue=4 | date=2007-06-07 | issn=1547-7037 | doi=10.1007/s11669-007-9121-y | pages=410| bibcode=2007JPED...28..410O | s2cid=95791114 }}

| Iridium

| Ir

| 9

| 6

| d

| IrSi, Ir₄Si₅, Ir₃Si₄, Ir₃Si₅, IrSi₃. Ir₂Si₃, Ir₄Si₇, IrSi₂{{cite journal | last1=Allevato | first1=C.E. | last2=Vining | first2=Cronin B. | title=Phase diagram and electrical behavior of silicon-rich iridium silicide compounds | journal=Journal of Alloys and Compounds | publisher=Elsevier BV | volume=200 | issue=1–2 | year=1993 | issn=0925-8388 | doi=10.1016/0925-8388(93)90478-6 | pages=99–105}}{{cite journal | last1=Jeitschko | first1=W. | last2=Parthé | first2=E. | title=The crystal structure of Rh17Ga22, an example of a new kind of electron compound | journal=Acta Crystallographica | publisher=International Union of Crystallography (IUCr) | volume=22 | issue=3 | date=1967-03-10 | issn=0365-110X | doi=10.1107/s0365110x67000799 | pages=417–430| bibcode=1967AcCry..22..417J }}

| Platinum

| Pt

| 10

| 6

| d

| Pt₂₅Si₇, Pt₁₇Si₈, Pt₆Si₅, Pt₅Si₂, Pt₃Si, Pt₂Si, PtSi{{cite journal | last=Okamoto | first=H. | title=Pt-Si (Platinum-Silicon) | journal=Journal of Phase Equilibria | publisher=Springer Science and Business Media LLC | volume=16 | issue=3 | year=1995 | issn=1054-9714 | doi=10.1007/bf02667320 | pages=286–287| s2cid=198916454 }}

| Gold

| Au

| 11

| 6

| d

| Eutectic diagram at link{{cite journal | last1=Okamoto | first1=H. | last2=Massalski | first2=T. B. | title=The Au−Si (Gold-Silicon) system | journal=Bulletin of Alloy Phase Diagrams | publisher=Springer Science and Business Media LLC | volume=4 | issue=2 | year=1983 | issn=0197-0216 | doi=10.1007/bf02884878 | pages=190–198}}

| Mercury

| Hg

| 12

| 6

| d

| eutectic{{cite journal | last=Guminski | first=C. | title=The Hg-Si system (mercury-silicon) | journal=Journal of Phase Equilibria | publisher=Springer Science and Business Media LLC | volume=22 | issue=6 | year=2001 | issn=1054-9714 | doi=10.1007/s11669-001-0041-y | pages=682–683}}

| Actinium

| Ac

| 7

| f

| Thorium

| Th

| 7

| f

| Th₃Si₂, ThSi, Th₃Si₅, and ThSi_2−xas summarized in Constitution of Binary Alloys, Second Supplement, Francis A. Shunk, McGraw-Hill Book Inc., (NY NY 1969) p. 681-82.

| Protactinium

| Pa

| 7

| f

| Uranium

| U

| 7

| f

| U₃Si, U₃Si₂, USi, U₃Si₅, USi_2−x, USi₂ and USi₃{{cite conference |url=http://www.rertr.anl.gov/Web1999/PDF/18suripto.pdf |book-title=1999 International Meeting on Reduced Enrichment for Research and Test Reactors |location=Budapest, Hungary |date=October 3–8, 1999 |title=HIGH DENSITY URANIUM SILICIDE WITH EXCESS URANIUM}}

| Neptunium

| Np

| 7

| f

| NpSi₃, Np₃Si₂, and NpSi{{cite journal | last1=Boulet | first1=Pascal | last2=Bouëxière | first2=Daniel | last3=Rebizant | first3=Jean | last4=Wastin | first4=Franck | title=Structural chemistry of the neptunium–silicon binary system | journal=Journal of Alloys and Compounds | publisher=Elsevier BV | volume=349 | issue=1–2 | year=2003 | issn=0925-8388 | doi=10.1016/s0925-8388(02)00918-0 | pages=172–179}}

| Plutonium

| Pu

| 7

| f

| Pu₅Si₃, Pu₃Si₂, PuSi, Pu₃Si₅ and PuSi₂{{cite journal | last1=Land | first1=C.C. | last2=Johnson | first2=K.A. | last3=Ellinger | first3=F.H. | title=The plutonium-silicon system | journal=Journal of Nuclear Materials | publisher=Elsevier BV | volume=15 | issue=1 | year=1965 | issn=0022-3115 | doi=10.1016/0022-3115(65)90105-4 | pages=23–32| bibcode=1965JNuM...15...23L | url=https://digital.library.unt.edu/ark:/67531/metadc1032796/ }}

| Americium

| Am

| 7

| f

| AmSi, AmSi₂{{cite journal | last1=Weigel | first1=F. | last2=Wittmann | first2=F.D. | last3=Marquart | first3=R. | title=Americium monosilicide and "disilicide" | journal=Journal of the Less Common Metals | publisher=Elsevier BV | volume=56 | issue=1 | year=1977 | issn=0022-5088 | doi=10.1016/0022-5088(77)90217-x | pages=47–53}}

| Curium

| Cm

| 7

| f

| CmSi, Cm₂Si₃, CmSi₂{{cite journal | last1=Weigel | first1=F. | last2=Marquart | first2=R. | title=Preparation and properties of some curium silicides | journal=Journal of the Less Common Metals | publisher=Elsevier BV | volume=90 | issue=2 | year=1983 | issn=0022-5088 | doi=10.1016/0022-5088(83)90077-2 | pages=283–290}}

| Berkelium

| Bk

| 7

| f

| Californium

| Cf

| 7

| f

| Einsteinium

| Es

| 7

| f

100

| Fermium

| Fm

| 7

| f

101

| Mendelevium

| Md

| 7

| f

102

| Nobelium

| No

| 7

| f

103

| Lawrencium

| Lr

| 3

| 7

| d

104

| Rutherfordium

| Rf

| 4

| 7

| d

105

| Dubnium

| Db

| 5

| 7

| d

106

| Seaborgium

| Sg

| 6

| 7

| d

107

| Bohrium

| Bh

| 7

| d

108

| Hassium

| Hs

| 8

| 7

| d

109

| Meitnerium

| Mt

| 9

| 7

| d

110

| Darmstadtium

| Ds

| 10

| 7

| d

111

| Roentgenium

| Rg

| 11

| 7

| d

112

| Copernicium

| Cn

| 12

| 7

| d

Group 13

In group 13 boron (a metalloid) forms several binary crystalline silicon boride compounds: SiB₃, SiB₆, SiB_n.{{cite journal | last1=Olesinski | first1=R. W. | last2=Abbaschian | first2=G. J. | title=The B−Si (Boron-Silicon) system | journal=Bulletin of Alloy Phase Diagrams | publisher=Springer Science and Business Media LLC | volume=5 | issue=5 | year=1984 | issn=0197-0216 | doi=10.1007/bf02872900 | pages=478–484}} With aluminium, a post-transition metal, a eutectic is formed (577 °C @ 12.2 atom % Al) with maximum solubility of silicon in solid aluminium of 1.5%. Commercially relevant aluminium alloys containing silicon have at least element added.{{cite journal | last1=Murray | first1=J. L. | last2=McAlister | first2=A. J. | title=The Al-Si (Aluminum-Silicon) system | journal=Bulletin of Alloy Phase Diagrams | publisher=Springer Science and Business Media LLC | volume=5 | issue=1 | year=1984 | issn=0197-0216 | doi=10.1007/bf02868729 | pages=74–84}} Gallium, also a post-transition metal, forms a eutectic at 29 °C with 99.99% Ga without mutual solid-state solubility;{{cite journal | last1=Olesinski | first1=R. W. | last2=Kanani | first2=N. | last3=Abbaschian | first3=G. J. | title=The Ga−Si (Gallium-Silicon) system | journal=Bulletin of Alloy Phase Diagrams | publisher=Springer Science and Business Media LLC | volume=6 | issue=4 | year=1985 | issn=0197-0216 | doi=10.1007/bf02880523 | pages=362–364}} indium{{cite journal | last1=Olesinski | first1=R. W. | last2=Kanani | first2=N. | last3=Abbaschian | first3=G. J. | title=The In−Si (Indium-Silicon) system | journal=Bulletin of Alloy Phase Diagrams | publisher=Springer Science and Business Media LLC | volume=6 | issue=2 | year=1985 | issn=0197-0216 | doi=10.1007/bf02869223 | pages=128–130}} and thallium{{cite journal | last1=Olesinski | first1=R. W. | last2=Abbaschian | first2=G. J. | title=The Si-Zn (Silicon-Thallium) system | journal=Bulletin of Alloy Phase Diagrams | publisher=Springer Science and Business Media LLC | volume=6 | issue=6 | year=1985 | issn=0197-0216 | doi=10.1007/bf02887155 | pages=543–544}} behave similarly.

Group 14

Silicon carbide (SiC) is widely used as a ceramic or example in car brakes and bulletproof vests. It is also used in semiconductor electronics. It is manufactured from silicon dioxide and carbon in an Acheson furnace between 1600 and 2500 °C. There are 250 known crystalline forms with alpha silicon carbide the most common. Silicon itself is an important semiconductor material used in microchips. It is produced commercially from silica and carbon at 1900 °C and crystallizes in a diamond cubic crystal structure. Germanium silicide forms a solid solution and is again a commercially used semiconductor material.{{cite journal | last1=Olesinski | first1=R. W. | last2=Abbaschian | first2=G. J. | title=The Ge−Si (Germanium-Silicon) system | journal=Bulletin of Alloy Phase Diagrams | publisher=Springer Science and Business Media LLC | volume=5 | issue=2 | year=1984 | issn=0197-0216 | doi=10.1007/bf02868957 | pages=180–183}} The tin–silicon phase diagram is a eutectic{{cite journal | last1=Olesinski | first1=R. W. | last2=Abbaschian | first2=G. J. | title=The Si−Sn (Silicon−Tin) system | journal=Bulletin of Alloy Phase Diagrams | publisher=Springer Science and Business Media LLC | volume=5 | issue=3 | year=1984 | issn=0197-0216 | doi=10.1007/bf02868552 | pages=273–276}} and the lead–silicon phase diagram shows a monotectic transition and a small eutectic transition but no solid solubility.{{cite journal | last1=Olesinski | first1=R. W. | last2=Abbaschian | first2=G. J. | title=The Pb−Si (Lead−Silicon) system | journal=Bulletin of Alloy Phase Diagrams | publisher=Springer Science and Business Media LLC | volume=5 | issue=3 | year=1984 | issn=0197-0216 | doi=10.1007/bf02868551 | pages=271–273}}

Group 15

Silicon nitride (Si₃N₄) is a ceramic with many commercial high-temperature applications such as engine parts. It can be synthesized from the elements at temperatures between 1300 and 1400 °C. Three different crystallographic forms exist. Other binary silicon nitrogen compounds have been proposed (SiN, Si₂N₃, Si₃N){{cite journal | last=Carlson | first=O. N. | title=The N-Si (Nitrogen-Silicon) system | journal=Bulletin of Alloy Phase Diagrams | publisher=Springer Science and Business Media LLC | volume=11 | issue=6 | year=1990 | issn=0197-0216 | doi=10.1007/bf02841719 | pages=569–573}} and other SiN compounds have been investigated at cryogenic temperatures (SiN₂, Si(N₂)₂, SiNNSi).{{cite journal | last1=Maier | first1=Günther | last2=Reisenauer | first2=Hans Peter | last3=Glatthaar | first3=Jörg | title=Reactions of Silicon Atoms with Nitrogen: A Combined Matrix Spectroscopic and Density Functional Theory Study1 | journal=Organometallics | publisher=American Chemical Society (ACS) | volume=19 | issue=23 | date=2000-10-21 | issn=0276-7333 | doi=10.1021/om000234r | pages=4775–4783}} Silicon tetraazide is an unstable compound that easily detonates.

The phase diagram with phosphorus shows SiP and SiP₂.{{cite journal | last1=Olesinski | first1=R. W. | last2=Kanani | first2=N. | last3=Abbaschian | first3=G. J. | title=The P−Si (Phosphorus-Silicon) system | journal=Bulletin of Alloy Phase Diagrams | publisher=Springer Science and Business Media LLC | volume=6 | issue=2 | year=1985 | issn=0197-0216 | doi=10.1007/bf02869224 | pages=130–133}} A reported silicon phosphide is Si₁₂P₅ (no practical applications),{{cite journal | last1=Carlsson | first1=J. R. A. | last2=Madsen | first2=L. D. |author2-link=Lynette Madsen| last3=Johansson | first3=M. P. | last4=Hultman | first4=L. | last5=Li | first5=X.-H. | last6=Hentzell | first6=H. T. G. | last7=Wallenberg | first7=L. R. | title=A new silicon phosphide, Si12P5: Formation conditions, structure, and properties | journal=Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films | publisher=American Vacuum Society | volume=15 | issue=2 | year=1997 | issn=0734-2101 | doi=10.1116/1.580497 | pages=394–401| bibcode=1997JVSTA..15..394C }}{{cite journal | last1=Huang | first1=M. | last2=Feng | first2=Y.P. | title=Further study on structural and electronic properties of silicon phosphide compounds with 3:4 stoichiometry | journal=Computational Materials Science | publisher=Elsevier BV | volume=30 | issue=3–4 | year=2004 | issn=0927-0256 | doi=10.1016/j.commatsci.2004.02.031 | pages=371–375}} formed by annealing an amorphous Si-P alloy.

The arsenic–silicon phase diagram measured at 40 Bar has two phases: SiAs and SiAs₂.{{cite journal | last1=Olesinski | first1=R. W. | last2=Abbaschian | first2=G. J. | title=The As−Si (Arsenic-Silicon) system | journal=Bulletin of Alloy Phase Diagrams | publisher=Springer Science and Business Media LLC | volume=6 | issue=3 | year=1985 | issn=0197-0216 | doi=10.1007/bf02880410 | pages=254–258}} The antimony–silicon system comprises a single eutectic close to the melting point of Sb.{{cite journal | last1=Olesinski | first1=R. W. | last2=Abbaschian | first2=G. J. | title=The Sb-Si (Antimony-Silicon) system | journal=Bulletin of Alloy Phase Diagrams | publisher=Springer Science and Business Media LLC | volume=6 | issue=5 | year=1985 | issn=0197-0216 | doi=10.1007/bf02869508 | pages=445–448}} The bismuth system is a monotectic.{{cite journal | last1=Olesinski | first1=R. W. | last2=Abbaschian | first2=G. J. | title=The Bi−Si (Bismuth-Silicon) system | journal=Bulletin of Alloy Phase Diagrams | publisher=Springer Science and Business Media LLC | volume=6 | issue=4 | year=1985 | issn=0197-0216 | doi=10.1007/bf02880522 | pages=359–361}}

Group 16

In group 16 silicon dioxide is a very common compound that widely occurs as sand or quartz. SiO₂ is tetrahedral with each silicon atom surrounded by 4 oxygen atoms. Numerous crystalline forms exist with the tetrahedra linked to form a polymeric chain. Examples are tridymite and cristobalite. A less common oxide is silicon monoxide that can be found in outer space. Unconfirmed reports exist for nonequilibrium Si₂O, Si₃O₂, Si₃O₄, Si₂O₃ and Si₃O₅.{{cite journal | last=Wrledt | first=H. A. | title=The O-Si (Oxygen-Silicon) system | journal=Bulletin of Alloy Phase Diagrams | publisher=Springer Science and Business Media LLC | volume=11 | issue=1 | year=1990 | issn=0197-0216 | doi=10.1007/bf02841583 | pages=43–61}} Silicon sulfide is also a chain compound. Cyclic SiS₂ has been reported to exist in the gas phase.{{cite journal | last1=Mück | first1=Leonie Anna | last2=Lattanzi | first2=Valerio | last3=Thorwirth | first3=Sven | last4=McCarthy | first4=Michael C. | last5=Gauss | first5=Jürgen | title=Cyclic SiS2: A New Perspective on the Walsh Rules | journal=Angewandte Chemie International Edition | publisher=Wiley | volume=51 | issue=15 | date=2012-02-28 | issn=1433-7851 | doi=10.1002/anie.201108982 | pages=3695–3698| pmid=22374622 }} The phase diagram of silicon with selenium has two phases: SiSe₂ and SiSe.{{cite journal | last=Okamoto | first=H. | title=Se-Si (Selenium-Silicon) | journal=Journal of Phase Equilibria | publisher=Springer Science and Business Media LLC | volume=21 | issue=5 | year=2000 | issn=1054-9714 | doi=10.1361/105497100770339815 | pages=499}} Tellurium silicide is a semiconductor with formula TeSi₂ or Te₂Si₃.{{cite journal | last1=Davey | first1=T. G. | last2=Baker | first2=E. H. | title=A note on the Si-Te phase diagram | journal=Journal of Materials Science | publisher=Springer Science and Business Media LLC | volume=15 | issue=6 | year=1980 | issn=0022-2461 | doi=10.1007/bf00752149 | pages=1601–1602| bibcode=1980JMatS..15.1601D | s2cid=135533614 }}

Group 17

Binary silicon compounds in group 17 are stable compounds ranging from gaseous silicon fluoride (SiF₄) to the liquids silicon chloride (SiCl₄ and silicon bromide SiBr₄) to the solid silicon iodide (SiI₄). The molecular geometry in these compounds is tetrahedral and the bonding mode covalent. Other known stable fluorides in this group are Si₂F₆, Si₃F₈ (liquid) and polymeric solids known as polysilicon fluorides (SiF₂)_x and (SiF)_x. The other halides form similar binary silicon compounds.Inorganic chemistry, Egon Wiberg, Nils Wiberg, Arnold Frederick Holleman 2001

The periodic table of the binary silicon compounds

class="wikitable" style="margin-left:auto; margin-right:auto; margin-bottom:0; margin-top:0; text-align:top; background-color:white; border:0px"

| style="background:#99bbff" | SiH₄

| colspan=1 style="border:none"|

| colspan=11 style="border:none" rowspan=3|

| colspan=5 style="border:none"|

| style="background:white" |He

| style="background:#F0DC82" | LiSi

| style="background:#ddd" |Be

| style="background:#99bbff" | SiB₃

| style="background:#99bbff" | SiC

| style="background:#99bbff"| Si₃N₄

| style="background:#99bbff" | SiO₂

| style="background:#99bbff" | SiF₄

| style="background:white" | Ne

| style="background:#F0DC82" | NaSi

| style="background:#F0DC82" | Mg₂Si

| style="background:#ddd" | Al

| style="background:#99bbff" | Si

| style="background:#99bbff" | SiP

| style="background:#99bbff" | SiS₂

| style="background:#99bbff" | SiCl₄

| style="background:white" | Ar

| style="background:#F0DC82" | KSi

| style="background:#F0DC82" | CaSi₂

| style="background:#98FF98" | ScSi

| style="background:#98FF98" | TiSi

| style="background:#98FF98" | V₅Si₃

| style="background:#98FF98" | Cr₅Si₃

| style="background:#98FF98" | MnSi

| style="background:#98FF98" | FeSi

| style="background:#98FF98" | CoSi

| style="background:#98FF98" | NiSi

| style="background:#98FF98" | Cu₅Si

| style="background:#ddd" | Zn

| style="background:#ddd" | Ga

| style="background:#ddd" | Si_1−xGe_x

| style="background:#99bbff" | SiAs

| style="background:#99bbff" | SiSe₂

| style="background:#99bbff" | SiBr₄

| style="background:white" | Kr

| style="background:#F0DC82" | RbSi

| style="background:#F0DC82" | Sr₂Si

| style="background:#98FF98" | YSi

| style="background:#98FF98" | ZrSi

| style="background:#98FF98" | Nb₅Si₃

| style="background:#98FF98" | Mo₅Si₃

| style="background:mistyrose" |Tc

| style="background:#98FF98" | RuSi

| style="background:#98FF98" | RhSi

| style="background:#98FF98" | PdSi

| style="background:#ddd" | Ag

| style="background:#ddd" | Cd

| style="background:#ddd" |In

| style="background:#ddd" | Sn

| style="background:#ddd" | Sb

| style="background:#99bbff" | TeSi₂

| style="background:#99bbff" | SiI₄

| style="background:white" | Xe

| style="background:#F0DC82" | CsSi

| style="background:#F0DC82" | Ba₂Si

| style="background:white" |

| style="background-color:#98FF98"|LuSi

| style="background:#98FF98" | HfSi

| style="background:#98FF98" | Ta₅Si₃

| style="background:#98FF98" | W₅Si₃

| style="background:#98FF98" |ReSi₂

| style="background:#98FF98" | OsSi

| style="background:#98FF98" | IrSi

| style="background:#98FF98" | PtSi

| style="background:#ddd" | Au

| style="background:#ddd" | Hg

| style="background:#ddd" | Tl

| style="background:#ddd" |Pb

| style="background:#ddd" | Bi

| style="background:mistyrose" | Po

| style="background:mistyrose" | At

| style="background:white" | Rn

style="background-color:mistyrose"

| Fr

| style="background:mistyrose" | Ra

| style="background:white" |

| style="background-color:mistyrose"|Lr

| Rf

| Db

| Sg

| Bh

| Hs

| Mt

| Ds

| Rg

| Cn

| style="background:mistyrose" | Nh

| style="background:mistyrose" | Fl

| style="background:mistyrose" | Mc

| style="background:mistyrose" | Lv

| style="background:mistyrose" | Ts

| style="background:white" | Og

colspan=3 style="border:none"|

| style="border:none"| ↓

| colspan=14 style="border:none"|

style="background-color:mistyrose"

| colspan=3 style="border:none; background-color:white"|

| style="background-color:#98FF98"|LaSi

| style="background-color:#98FF98"|CeSi

| style="background-color:#98FF98"|PrSi

| style="background-color:#98FF98"|NdSi

| style="background-color:mistyrose"|Pm

| style="background-color:#98FF98"|SmSi

| style="background-color:#98FF98"|EuSi

| style="background-color:#98FF98"|GdSi

| style="background-color:#98FF98"|TbSi

| style="background-color:#98FF98"|DySi

| style="background-color:#98FF98"|HoSi

| style="background-color:#98FF98"|ErSi

| style="background-color:mistyrose"|Tm

| style="background-color:#98FF98"|YbSi

style="background-color:mistyrose"

| colspan=3 style="border:none; background-color:white"|

| style="background-color:mistyrose"|Ac

| style="background-color:#98FF98"|ThSi

| style="background-color:mistyrose"|Pa

| style="background-color:#98FF98"|USi

| style="background-color:#98FF98"|NpSi

| style="background-color:#98FF98"|PuSi

| style="background-color:#98FF98"|AmSi

| style="background-color:#98FF98"|CmSi

| style="background-color:mistyrose"|Bk

| style="background-color:mistyrose"|Cf

| style="background-color:mistyrose"|Es

| style="background-color:mistyrose"|Fm

| style="background-color:mistyrose"|Md

| style="background-color:mistyrose"|No

| style="border:none; background-color:white"|

border=2 cellpadding=4 style="margin-left:auto; margin-right:auto; text-align:center; background:silver; border:1px solid gray; border-collapse:collapse; width:50%; font-size:100%;"

+ Binary compounds of silicon

style="background:#99bbff" | Covalent silicon compounds

| style="background:#98FF98" | metallic silicides.

style="background:#F0DC82" | Ionic silicides

| style="background:white" | Do not exist

style="background:#ddd" | Eutectic / monotectic / solid solution

| style="background:mistyrose" | Unknown / Not assessed

References

Category:Binary compounds

Category:Silicon compounds

Silicon, binary compounds