bismuth selenide

Bismuth selenide is a semiconductor and a thermoelectric material.{{Cite journal |last=Mishra |first=S K |author2=S Satpathy |author3=O Jepsen |date=1997-01-13 |title=Electronic structure and thermoelectric properties of bismuth telluride and bismuth selenide |journal=Journal of Physics: Condensed Matter |volume=9 |issue=2 |pages=461–470 |bibcode=1997JPCM....9..461M |doi=10.1088/0953-8984/9/2/014 |issn=0953-8984 |hdl-access=free |hdl=10355/9466 |s2cid=250922249}} While stoichiometric bismuth selenide should be a semiconductor with a gap of 0.3 eV, naturally occurring selenium vacancies act as electron donors, so Bi₂Se₃ is intrinsically n-type.{{Cite journal |last1=Analytis |first1=James G. |last2=Chu |first2=Jiun-Haw |last3=Chen |first3=Yulin |last4=Corredor |first4=Felipe |last5=McDonald |first5=Ross D. |last6=Shen |first6=Z. X. |last7=Fisher |first7=Ian R. |date=2010-05-05 |title=Bulk Fermi surface coexistence with Dirac surface state in Bi 2 Se 3 : A comparison of photoemission and Shubnikov–de Haas measurements |url=https://link.aps.org/doi/10.1103/PhysRevB.81.205407 |journal=Physical Review B |language=en |volume=81 |issue=20 |pages=205407 |doi=10.1103/PhysRevB.81.205407 |arxiv=1001.4050 |bibcode=2010PhRvB..81t5407A |s2cid=118322170 |issn=1098-0121}}{{cite journal |last1=Xia |first1=Y |last2=Qian |first2=D |last3=Hsieh |first3=D |last4=Wray |first4=L |last5=Pal |first5=A |last6=Lin |first6=H |last7=Bansil |first7=A |last8=Grauer |first8=D |last9=Hor |first9=Y. S |last10=Cava |first10=R. J |last11=Hasan |first11=M. Z |year=2009 |title=Observation of a large-gap topological-insulator class with a single Dirac cone on the surface |journal=Nature Physics |volume=5 |issue=6 |pages=398–402 |bibcode=2009NatPh...5..398X |doi=10.1038/nphys1274 |doi-access=free|arxiv=0908.3513 }}{{Cite journal |last=Hor |first=Y. S. |author2=A. Richardella |author3=P. Roushan |author4=Y. Xia |author5=J. G. Checkelsky |author6=A. Yazdani |author7=M. Z. Hasan |author8=N. P. Ong |author9=R. J. Cava |date=2009-05-21 |title=p-type Bi₂Se₃ for topological insulator and low-temperature thermoelectric applications |journal=Physical Review B |volume=79 |issue=19 |page=195208 |arxiv=0903.4406 |bibcode=2009PhRvB..79s5208H |doi=10.1103/PhysRevB.79.195208 |s2cid=119217126}}

Bismuth selenide has a topologically insulating ground-state.{{cite journal |last1=Xia |first1=Y. |last2=Qian |first2=D. |last3=Hsieh |first3=D. |last4=Wray |first4=L. |last5=Pal |first5=A. |last6=Lin |first6=H. |last7=Bansil |first7=A. |last8=Grauer |first8=D. |last9=Hor |first9=Y. S. |last10=Cava |first10=R. J. |last11=Hasan |first11=M. Zahid |date=2009 |title=Discovery (theoretical prediction and experimental observation) of a large-gap topological-insulator class with spin-polarized single-Dirac-cone on the surface |journal=Nature Physics |arxiv=0908.3513 |doi=10.1038/nphys1274 |issn=1745-2473 |s2cid=119195663}} Topologically protected Dirac cone surface states have been observed in Bismuth selenide and its insulating derivatives leading to intrinsic topological insulators,{{Cite journal |last=Hsieh |first=D. |author2=Y. Xia |author3=D. Qian |author4=L. Wray |author5=J. H. Dil |author6=F. Meier |author7=J. Osterwalder |author8=L. Patthey |author9=J. G. Checkelsky |author10=N. P. Ong |author11=A. V. Fedorov |author12=H. Lin |author13=A. Bansil |author14=D. Grauer |author15=Y. S. Hor |year=2009 |title=A tunable topological insulator in the spin helical Dirac transport regime |journal=Nature |volume=460 |issue=7259 |pages=1101–1105 |arxiv=1001.1590 |bibcode=2009Natur.460.1101H |doi=10.1038/nature08234 |issn=0028-0836 |pmid=19620959 |author16=R. J. Cava |author17=M. Z. Hasan |s2cid=4369601}}{{Cite journal |last1=Hasan |first1=M. Zahid |last2=Moore |first2=Joel E. |date=2011-02-08 |title=Three-Dimensional Topological Insulators |journal=Annual Review of Condensed Matter Physics |volume=2 |issue=1 |pages=55–78 |arxiv=1011.5462 |bibcode=2011ARCMP...2...55H |doi=10.1146/annurev-conmatphys-062910-140432 |issn=1947-5454 |s2cid=11516573}}{{Cite journal |last1=Xu |first1=Yang |last2=Miotkowski |first2=Ireneusz |last3=Liu |first3=Chang |last4=Tian |first4=Jifa |last5=Nam |first5=Hyoungdo |last6=Alidoust |first6=Nasser |last7=Hu |first7=Jiuning |last8=Shih |first8=Chih-Kang |last9=Hasan |first9=M. Zahid |last10=Chen |first10=Yong P. |date=2014 |title=Observation of topological surface state quantum Hall effect in an intrinsic three-dimensional topological insulator |journal=Nature Physics |language=en |volume=10 |issue=12 |pages=956–963 |arxiv=1409.3778 |bibcode=2014NatPh..10..956X |doi=10.1038/nphys3140 |issn=1745-2481 |s2cid=51843826}} which later became the subject of world-wide scientific research.{{Cite journal |last1=Hasan |first1=M. Z. |last2=Kane |first2=C. L. |date=2010-11-08 |title=Colloquium: Topological insulators |journal=Reviews of Modern Physics |volume=82 |issue=4 |pages=3045–3067 |arxiv=1002.3895 |bibcode=2010RvMP...82.3045H |doi=10.1103/RevModPhys.82.3045 |s2cid=16066223}}{{Cite web |title=The Strange Topology That Is Reshaping Physics |url=https://www.scientificamerican.com/article/the-strange-topology-that-is-reshaping-physics/ |access-date=2020-04-22 |website=Scientific American |language=en}}{{Cite web |title=Welcome to the Weird Mathematical World of Topology |url=https://www.discovermagazine.com/technology/welcome-to-the-weird-mathematical-world-of-topology |access-date=2020-04-22 |website=Discover Magazine |language=en}}{{Cite journal |last=Ornes |first=Stephen |date=2016-09-13 |title=Topological insulators promise computing advances, insights into matter itself |journal=Proceedings of the National Academy of Sciences |language=en |volume=113 |issue=37 |pages=10223–10224 |doi=10.1073/pnas.1611504113 |issn=0027-8424 |pmc=5027448 |pmid=27625422 |doi-access=free}}

Bismuth selenide is a van der Waals material consisting of covalently bound five-atom layers (quintuple layers) which are held together by van der Waals interactions{{Cite journal |last1=Luo |first1=Xin |last2=Sullivan |first2=Michael B. |last3=Quek |first3=Su Ying |date=2012-11-27 |title=First-principles investigations of the atomic, electronic, and thermoelectric properties of equilibrium and strained Bi 2 Se 3 and Bi 2 Te 3 including van der Waals interactions |url=https://link.aps.org/doi/10.1103/PhysRevB.86.184111 |journal=Physical Review B |language=en |volume=86 |issue=18 |pages=184111 |doi=10.1103/PhysRevB.86.184111 |arxiv=1308.1523 |bibcode=2012PhRvB..86r4111L |s2cid=118022274 |issn=1098-0121}} and spin-orbit coupling effects.{{Cite thesis |last=Holtgrewe |first=Kris |date=2022 |title=Theoretical modelling of nano-scaled systems with heavy ions |url=https://jlupub.ub.uni-giessen.de//handle/jlupub/8511 |journal=Universitätsbibliothek Gießen |language=en |doi=10.22029/jlupub-7899}} Although the (0001) surface is chemically inert (mostly due to the inert-pair effect of Bi), there are metallic surface states, protected by the non-trivial topology of the bulk. For this reason, the Bi₂Se₃ surface is an interesting candidate for van der Waals epitaxy and subject of scientific research. For instance, different phases of antimony layers can be grown on Bi₂Se₃,{{Cite journal |last1=Flammini |first1=R |last2=Colonna |first2=S |last3=Hogan |first3=C |last4=Mahatha |first4=S K |last5=Papagno |first5=M |last6=Barla |first6=A |last7=Sheverdyaeva |first7=P M |last8=Moras |first8=P |last9=Aliev |first9=Z S |last10=Babanly |first10=M B |last11=Chulkov |first11=E V |last12=Carbone |first12=C |last13=Ronci |first13=F |date=2018-02-09 |title=Evidence of β -antimonene at the Sb/Bi 2 Se 3 interface |url=https://iopscience.iop.org/article/10.1088/1361-6528/aaa2c4 |journal=Nanotechnology |volume=29 |issue=6 |pages=065704 |doi=10.1088/1361-6528/aaa2c4 |pmid=29320369 |bibcode=2018Nanot..29f5704F |issn=0957-4484}}{{Cite journal |last1=Hogan |first1=Conor |last2=Holtgrewe |first2=Kris |last3=Ronci |first3=Fabio |last4=Colonna |first4=Stefano |last5=Sanna |first5=Simone |last6=Moras |first6=Paolo |last7=Sheverdyaeva |first7=Polina M. |last8=Mahatha |first8=Sanjoy |last9=Papagno |first9=Marco |last10=Aliev |first10=Ziya S. |last11=Babanly |first11=Mahammad |last12=Chulkov |first12=Evgeni V. |last13=Carbone |first13=Carlo |last14=Flammini |first14=Roberto |date=2019-09-24 |title=Temperature Driven Phase Transition at the Antimonene/Bi 2 Se 3 van der Waals Heterostructure |url=https://pubs.acs.org/doi/10.1021/acsnano.9b04377 |journal=ACS Nano |language=en |volume=13 |issue=9 |pages=10481–10489 |doi=10.1021/acsnano.9b04377 |pmid=31469534 |arxiv=1906.01901 |s2cid=174799137 |issn=1936-0851}} by means of which topological pn-junctions can be realised.{{Cite journal |last1=Jin |first1=Kyung-Hwan |last2=Yeom |first2=Han Woong |last3=Jhi |first3=Seung-Hoon |date=2016-02-19 |title=Band structure engineering of topological insulator heterojunctions |url=https://link.aps.org/doi/10.1103/PhysRevB.93.075308 |journal=Physical Review B |language=en |volume=93 |issue=7 |pages=075308 |doi=10.1103/PhysRevB.93.075308 |bibcode=2016PhRvB..93g5308J |issn=2469-9950}} More intriguingly, Sb layers undergo topological phase transitions when attached to the Bi₂Se₃ surface and thus inherit the non-trivial topological properties of the Bi₂Se₃ substrate.{{Cite journal |last1=Holtgrewe |first1=K. |last2=Mahatha |first2=S. K. |last3=Sheverdyaeva |first3=P. M. |last4=Moras |first4=P. |last5=Flammini |first5=R. |last6=Colonna |first6=S. |last7=Ronci |first7=F. |last8=Papagno |first8=M. |last9=Barla |first9=A. |last10=Petaccia |first10=L. |last11=Aliev |first11=Z. S. |last12=Babanly |first12=M. B. |last13=Chulkov |first13=E. V. |last14=Sanna |first14=S. |last15=Hogan |first15=C. |date=2020-09-03 |title=Topologization of β-antimonene on Bi2Se3 via proximity effects |journal=Scientific Reports |language=en |volume=10 |issue=1 |pages=14619 |doi=10.1038/s41598-020-71624-4 |issn=2045-2322 |pmc=7471962 |pmid=32884112|bibcode=2020NatSR..1014619H }}{{Cite journal |last1=Holtgrewe |first1=Kris |last2=Hogan |first2=Conor |last3=Sanna |first3=Simone |date=2021-04-02 |title=Evolution of Topological Surface States Following Sb Layer Adsorption on Bi2Se3 |journal=Materials |language=en |volume=14 |issue=7 |pages=1763 |doi=10.3390/ma14071763 |issn=1996-1944 |pmc=8061775 |pmid=33918428|bibcode=2021Mate...14.1763H |doi-access=free }}

Although bismuth selenide occurs naturally (as the mineral guanajuatite) at the Santa Catarina Mine in Guanajuato, Mexico{{Cite web |title=Santa Catarina Mine, Rancho Calvillo, Santa Rosa, Sierra de Santa Rosa, Guanajuato Municipality, Guanajuato, Mexico |url=https://www.mindat.org/loc-21325.html |access-date=April 3, 2022 |website=mindat.org}} as well as some sites in the United States and Europe,{{Cite web |last1=Anthony |first1=John W. |last2=Bideaux |first2=Richard A. |last3=Bladh |first3=Kenneth W. |last4=Nichols |first4=Monte C. |title=Guanajuatite |url=http://www.handbookofmineralogy.org/pdfs/guanajuatite.pdf |access-date=April 3, 2022 |website=Handbook of Mineralogy |publisher=Mineralogical Society of America}} such deposits are rare and contain a significant level of sulfur atoms as an impurity. For this reason, most bismuth selenide used in research into potential commercial applications is synthesized. Commercially-produced samples are available for use in research, but the concentration of selenium vacancies is heavily dependent upon growth conditions,{{Cite journal |last1=Nisson |first1=D. M. |last2=Dioguardi |first2=A. P. |last3=Klavins |first3=P. |last4=Lin |first4=C. H. |last5=Shirer |first5=K. |last6=Shockley |first6=A. C. |last7=Crocker |first7=J. |last8=Curro |first8=N. J. |date=2013-05-13 |title=Nuclear magnetic resonance as a probe of electronic states of Bi 2 Se 3 |url=https://link.aps.org/doi/10.1103/PhysRevB.87.195202 |journal=Physical Review B |language=en |volume=87 |issue=19 |pages=195202 |doi=10.1103/PhysRevB.87.195202 |arxiv=1304.6768 |bibcode=2013PhRvB..87s5202N |s2cid=118621215 |issn=1098-0121}}{{Cite journal |last1=Butch |first1=N. P. |last2=Kirshenbaum |first2=K. |last3=Syers |first3=P. |last4=Sushkov |first4=A. B. |last5=Jenkins |first5=G. S. |last6=Drew |first6=H. D. |last7=Paglione |first7=J. |date=2010-06-01 |title=Strong surface scattering in ultrahigh-mobility Bi 2 Se 3 topological insulator crystals |url=https://link.aps.org/doi/10.1103/PhysRevB.81.241301 |journal=Physical Review B |language=en |volume=81 |issue=24 |pages=241301 |doi=10.1103/PhysRevB.81.241301 |arxiv=1003.2382 |bibcode=2010PhRvB..81x1301B |s2cid=55078840 |issn=1098-0121}} and so bismuth selenide used for research is often synthesized in the laboratory.

A stoichiometric mixture of elemental bismuth and selenium, when heated above the melting points of these elements in the absence of air, will become a liquid that freezes to crystalline {{chem2|Bi2Se3}}.{{Cite journal |last1=Chen |first1=Yang |last2=Liu |first2=Yajun |last3=Chu |first3=Maoyou |last4=Wang |first4=Lijun |date=2014-12-25 |title=Phase diagrams and thermodynamic descriptions for the Bi–Se and Zn–Se binary systems |url=https://www.sciencedirect.com/science/article/pii/S0925838814018568 |journal=Journal of Alloys and Compounds |language=en |volume=617 |pages=423–428 |doi=10.1016/j.jallcom.2014.08.001 |issn=0925-8388}} Large single crystals of bismuth selenide can be prepared by the Bridgman–Stockbarger method.{{Cite journal |last1=Atuchin |first1=V. V. |last2=Golyashov |first2=V. A. |last3=Kokh |first3=K. A. |last4=Korolkov |first4=I. V. |last5=Kozhukhov |first5=A. S. |last6=Kruchinin |first6=V. N. |last7=Makarenko |first7=S. V. |last8=Pokrovsky |first8=L. D. |last9=Prosvirin |first9=I. P. |last10=Romanyuk |first10=K. N. |last11=Tereshchenko |first11=O. E. |date=2011-12-07 |title=Formation of Inert Bi2Se3(0001) Cleaved Surface |url=https://doi.org/10.1021/cg201163v |journal=Crystal Growth & Design |volume=11 |issue=12 |pages=5507–5514 |doi=10.1021/cg201163v |issn=1528-7483}}

• Thermoelectric materials
• Thermoelectric effect
• Topological insulators

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{{Bismuth compounds}}

{{Selenides}}

Category:Bismuth compounds

Category:Selenides

Category:Semiconductor materials