nickel silicide
{{Chembox
| ImageFile = Ni2Si.png
| Name = Ni2Si
|Section1 = {{Chembox Identifiers
| PubChem = 14767304
| ChemSpiderID = 21241520
| CASNo = 12059-14-2
| EC_number = 235-033-1
| InChI=1S/2Ni.Si
| InChIKey = RUFLMLWJRZAWLJ-UHFFFAOYSA-N
| SMILES = [Si](=[Ni])=[Ni]
}}
|Section2 = {{Chembox Properties
|Formula=Ni2Si
| MolarMass =145.473 g/mol{{cite book |page=4.77| editor= Haynes, William M. | year = 2011 | title = CRC Handbook of Chemistry and Physics | edition = 92nd | publisher = CRC Press | isbn = 978-1439855119| title-link= CRC Handbook of Chemistry and Physics }}
| MeltingPtC = 1255
}}
| Section3 = {{Chembox Structure
| Structure_ref =El Boragy M., Rajasekharan T.P., Schubert K. (1982). Z. Metallkd., 73, 193–197. {{doi|10.1515/ijmr-1982-730313}}
| CrystalStruct = Orthorhombic, oP12
| SpaceGroup = Pnma, No. 62
| PointGroup =
| LattConst_a = 0.502 nm
| LattConst_b = 0.374 nm
| LattConst_c = 0.708 nm
| LattConst_alpha =
| LattConst_beta =
| LattConst_gamma =
| LattConst_ref =
| LattConst_Comment =
| UnitCellVolume =
| UnitCellFormulas = 4
}}
}}
{{Chembox
| ImageFile=FeB structure 2.png
| Name = NiSi
|Section1 = {{Chembox Identifiers
| PubChem = 10176091
| CASNo = 12035-57-3
| ChemSpiderID = 8351596
| InChI=1S/Ni.Si
| InChIKey = PEUPIGGLJVUNEU-UHFFFAOYSA-N
| SMILES = [Si].[Ni]
}}
|Section2 = {{Chembox Properties
|Formula=NiSi
| MolarMass =86.778 g/mol
| Density=
| MeltingPtC =
| MeltingPt_ref=
}}
| Section3 = {{Chembox Structure
| Structure_ref =Wopersnow W., Schubert K. (1976) Z. Metallkd., 67, 807–810. {{doi|10.1515/ijmr-1976-671203}}
| CrystalStruct = Orthorphomic, oP8
| SpaceGroup = Pnma, No. 62
| PointGroup =
| LattConst_a = 0.519 nm
| LattConst_b = 0.333 nm
| LattConst_c = 0.5628 nm
| LattConst_alpha =
| LattConst_beta =
| LattConst_gamma =
| LattConst_ref =
| LattConst_Comment =
| UnitCellVolume =
| UnitCellFormulas = 4
}}
}}
{{Chembox
| Name = NiSi2
| ImageFile = CaF2 polyhedra.png
| OtherNames =
| IUPACName =
| SystematicName =
| Section1 = {{Chembox Identifiers
| PubChem2 =
| ChemSpiderID =
| CASNo2 = 12201-89-7
| DTXSID2 = DTXSID401014290
| InChI2=1S/Ni.2Si
| InChIKey2 = MGTLYUZSHHQPEY-UHFFFAOYSA-N
| SMILES2 = [Ni].[Si].[Si]
}}
| Section2 = {{Chembox Properties
|Formula=NiSi2
| MolarMass =114.864 g/mol{{cite book |page=4.77| editor= Haynes, William M. | year = 2011 | title = CRC Handbook of Chemistry and Physics | edition = 92nd | publisher = CRC Press | isbn = 978-1439855119| title-link= CRC Handbook of Chemistry and Physics }}
| MeltingPtC = 993
}}
| Section3 = {{Chembox Structure
| CrystalStruct = Cubic, cF12
| SpaceGroup = Fm{{overline|3}}m, No. 225
| PointGroup =
| LattConst_a = 0.5406 nm
| LattConst_b =
| LattConst_c =
| LattConst_alpha =
| LattConst_beta =
| LattConst_gamma =
| LattConst_ref =
| LattConst_Comment =
| UnitCellVolume =
| UnitCellFormulas = 4
}}
| Section4 =
| Section5 =
| Section6 =
}}
Nickel silicides include several intermetallic compounds of nickel and silicon. Nickel silicides are important in microelectronics as they form at junctions of nickel and silicon. Additionally thin layers of nickel silicides may have application in imparting surface resistance to nickel alloys.
Compounds
Nickel silicides include Ni3Si, Ni31Si12, Ni2Si, Ni3Si2, NiSi and NiSi2.{{citation |last1=Dahal |first1=Ashutosh |last2=Gunasekera |first2=Jagath |last3=Harringer |first3=Leland |last4=Singh |first4=Deepak K. |last5=Singh |first5=David J. |title=Metallic nickel silicides: Experiments and theory for NiSi and first principles calculations for other phases |journal=Journal of Alloys and Compounds |date=July 2016 |volume=672 |pages=110–116 |doi=10.1016/j.jallcom.2016.02.133 |url=https://ws680.nist.gov/publication/get_pdf.cfm?pub_id=920134|arxiv=1602.05840 |s2cid=55434466 }} Ni31Si12, Ni2Si, and NiSi have congruent melting points; the others form via a peritectic transformation.{{Citation needed|date=December 2019|reason=removed citation to predatory publisher content}}
The silicides can be made via fusion or solid state reaction between the elements, diffusion at a junction of the two elements, and other methods including ion beam mixing.{{Citation needed|date=December 2019|reason=removed citation to predatory publisher content}}
=Properties=
Nickel silicides are generally chemically and thermally stable.{{Citation needed|date=December 2019|reason=removed citation to predatory publisher content}} They have low electrical resistivity; with NiSi 10.5–18 μΩ·cm, Ni2Si 24–30 μΩ·cm, NiSi2 34–50 μΩ·cm; nickel-rich silicides have higher resistivity rising to 90–150 μΩ·cm in Ni31Si12.{{Citation needed|date=December 2019|reason=removed citation to predatory publisher content}}
Uses
=Microelectronics=
Nickel silicides are important in microelectronic devices – specific silicides are good conductors, with NiSi having a conductivity approaching that of elemental nickel.{{Citation needed|date=December 2019|reason=removed citation to predatory publisher content}}
With silicon carbide as the semiconductor nickel reacts at elevated temperatures to form nickel silicides and carbon.{{Citation needed|date=December 2019|reason=removed citation to predatory publisher content}}
=Other=
Nickel silicides have potential as coatings for nickel-based superalloys and stainless steel, due to their corrosion, oxidation, and wear resistance.{{Citation needed|date=December 2019|reason=removed citation to predatory publisher content}}
NiSi has been investigated as a hydrogenation catalyst for unsaturated hydrocarbons.{{citation |last1=Itahara |first1=Hiroshi |last2=Simanullang |first2=Wiyanti F. |last3=Takahashi |first3=Naoko |last4=Kosaka |first4=Satoru |last5=Furukawa |first5=Shinya |title=Na-Melt Synthesis of Fine Ni3Si Powders as a Hydrogenation Catalyst |journal=Inorganic Chemistry |volume=58 |issue=9 |pages=5406–5409 |date=2019 |doi=10.1021/acs.inorgchem.9b00521|pmid=30983337 |s2cid=115204460 |url=https://figshare.com/articles/Na-Melt_Synthesis_of_Fine_Ni_sub_3_sub_Si_Powders_as_a_Hydrogenation_Catalyst/7993316 }} Nickel silicide nanoparticles supported on silica support have been suggested as an alternative catalyst to widely used pyrophoric Raney nickel.P. Ryabchuk, G. Agostini, M.-M. Pohl, H. Lund, A. Agapova, H. Junge, K. Junge and M. Beller, Sci. Adv., 2018, 4, eaat0761 https://doi.org/10.1126/sciadv.aat0761
See also
- J. Marvin Herndon, who promoted a theory that the Earth's core is nickel silicide
- Titanium disilicide, also used in microelectronics
- Salicide, self-aligned silicides
References
{{reflist}}
Further reading
- {{citation| title = Towards implementation of a nickel silicide process for CMOS technologies| first1 = C. | last1 = Lavoie | first2 = F.M. | last2 = d’Heurle | first3= C. | last3 =Detavernier | first4 = C. | last4 = Cabral| doi = 10.1016/S0167-9317(03)00380-0 | journal = Microelectronic Engineering | volume = 70 | issue = 2–4 | date = Nov 2003 | pages = 144–157 }}