:Tin telluride

{{chembox

| Verifiedfields = changed

| Watchedfields = changed

| verifiedrevid = 414434905

| Reference =

{{Citation | last = Lide | first = David R.

| year = 1998 | title = Handbook of Chemistry and Physics

| edition = 87 | location = Boca Raton, FL | publisher = CRC Press

| isbn = 978-0-8493-0594-8 | pages = 4–90}}

| ImageFile = NaCl polyhedra.png

| IUPACName = Tin telluride

| OtherNames = Tin(II) telluride, Stannous telluride

|Section1={{Chembox Identifiers

| CASNo_Ref = {{cascite|correct|CAS}}

| CASNo = 12040-02-7

| PubChem = 6432000

| InChI = 1S/Sn.Te

| SMILES = [Sn]=[Te]

}}

|Section2={{Chembox Properties

| Formula = SnTe

| MolarMass = 246.31 g/mol

| Appearance = gray cubic crystals

| Density = 6.445 g/cm³ Beattie, A. G., J. Appl. Phys., 40, 4818–4821, 1969.

| MeltingPtC = 790

| BoilingPt =

| Solubility =

| BandGap = 0.18 eV O. Madelung, U. Rössler, M. Schulz;

SpringerMaterials; sm_lbs_978-3-540-31360-1_859 (Springer-Verlag GmbH, Heidelberg, 1998),

http://materials.springer.com/lb/docs/sm_lbs_978-3-540-31360-1_859;

| ElectronMobility = 500 cm² V⁻¹ s⁻¹

| ThermalConductivity =

| RefractIndex =

}}

|Section3={{Chembox Structure

| CrystalStruct = Halite (cubic), cF₈

| SpaceGroup = Fm3m, No. 225

| Coordination = Octahedral (Sn²⁺)
Octahedral (Se²⁻)

| LattConst_a = 0.63 nm

}}

|Section4={{Chembox Thermochemistry

| DeltaHf =

| Entropy =

| HeatCapacity = 185 J K⁻¹ kg⁻¹

}}

|Section7={{Chembox Hazards

| ExternalSDS =

| HPhrases =

| PPhrases =

| GHS_ref =

| NFPA-H =

| NFPA-F =

| NFPA-R =

| FlashPt =

}}

|Section8={{Chembox Related

| OtherAnions = Tin(II) oxide
Tin(II) sulfide
Tin selenide

| OtherCations = Carbon monotelluride
Silicon monotelluride
Germanium telluride
Lead telluride

| OtherCompounds =

}}

}}

Tin telluride is a compound of tin and tellurium (SnTe); is a IV-VI narrow band gap semiconductor and has direct band gap of 0.18 eV. It is often alloyed with lead to make lead tin telluride, which is used as an infrared detector material.

Tin telluride normally forms p-type semiconductor (Extrinsic semiconductor) due to tin vacancies and is a low temperature

superconductor.{{Cite journal | last1 = Hein | first1 = R. | last2 = Meijer | first2 = P. | doi = 10.1103/PhysRev.179.497 | title = Critical Magnetic Fields of Superconducting SnTe | journal = Physical Review | volume = 179 | issue = 2 | pages = 497 | year = 1969 |bibcode = 1969PhRv..179..497H }}

SnTe exists in three crystal phases. At Low temperatures, where the concentration of hole carriers is less than 1.5x10²⁰ cm⁻³ , Tin Telluride exists in rhombohedral phase also known as α-SnTe.

At room temperature and atmospheric pressure, Tin Telluride exists in NaCl-like cubic crystal phase, known as β-SnTe.

While at 18 kbar pressure, β-SnTe transforms to γ-SnTe, orthorhombic phase, space group Pnma.{{cite book|doi=10.1007/10681727_862|chapter=Tin telluride (Sn Te) crystal structure, lattice parameters|title=Non-Tetrahedrally Bonded Elements and Binary Compounds I|volume=41C|pages=1–8|series=Landolt-Börnstein - Group III Condensed Matter|year=1998|isbn=978-3-540-64583-2}} This phase change is characterized by 11 percent increase in density and 360 percent increase in resistance for γ-SnTe.Kafalas, J. A.; Mariano, A. N., High-Pressure Phase Transition in Tin Telluride. Science 1964, 143 (3609), 952-952

Tin telluride is a thermoelectric material. Theoretical studies

imply that the n-type performance may be particularly good.{{Cite journal | last1 = Singh | first1 = D. J. | title = THERMOPOWER OF SnTe FROM BOLTZMANN TRANSPORT CALCULATIONS | doi = 10.1142/S1793604710001299 | journal = Functional Materials Letters | volume = 03 | issue = 4 | pages = 223–226 | year = 2010 | arxiv = 1006.4151 | s2cid = 119223416 }}