metal–nitride–oxide–semiconductor transistor
The metal–nitride–oxide–semiconductor or metal–nitride–oxide–silicon (MNOS) transistor is a type of MOSFET (metal–oxide–semiconductor field-effect transistor) in which the oxide layer is replaced by a double layer of nitride and oxide.{{cite book |last1=Brodie |first1=Ivor |last2=Muray |first2=Julius J. |title=The Physics of Microfabrication |date=2013 |publisher=Springer Science & Business Media |isbn=9781489921604 |page=74 |url=https://books.google.com/books?id=GQYHCAAAQBAJ&pg=PA74}} It is an alternative and supplement to the existing standard MOS technology, wherein the insulation employed is a nitride-oxide layer.{{cite journal|last1=Frohman-Bentchkowsky|first1=D.|title=The metal-nitride-oxide-silicon (MNOS) transistor—Characteristics and applications|journal=Proceedings of the IEEE|date=1970|volume=58|issue=8|pages=1207–1219|doi=10.1109/PROC.1970.7897}}{{cite web|title=Metal–nitride–oxide–semiconductor (MNOS) technology|url=https://www.jedec.org/standards-documents/dictionary/terms/metal-nitride-oxide-semiconductor-mnos-technology|publisher=JEDEC}} It is used in non-volatile computer memory.{{cite book|last1=Ng|first1=Kwok K.|title=Complete Guide to Semiconductor Devices|publisher=John Wiley & Sons, Inc.|isbn=9781118014769|pages=353–360|language=en|chapter=Metal-Nitride-Oxide Semiconductor Transistor|doi=10.1002/9781118014769.ch47|year=2010}}
History
{{Further|Charge trap flash}}
The first silicon dioxide transistors were developed by Frosch and Derick in 1957 at Bell Labs.{{Cite journal |last1=Frosch |first1=C. J. |last2=Derick |first2=L |date=1957 |title=Surface Protection and Selective Masking during Diffusion in Silicon |url=https://iopscience.iop.org/article/10.1149/1.2428650 |journal=Journal of the Electrochemical Society |language=en |volume=104 |issue=9 |pages=547 |doi=10.1149/1.2428650}}
In late 1967, a Sperry research team led by H.A. Richard Wegener invented the metal–nitride–oxide–semiconductor (MNOS) transistor,{{cite conference|last1=Wegener|first1=H. A. R.|last2=Lincoln|first2=A. J.|last3=Pao|first3=H. C.|last4=O'Connell|first4=M. R.|last5=Oleksiak|first5=R. E.|last6=Lawrence|first6=H.|title=The variable threshold transistor, a new electrically-alterable, non-destructive read-only storage device|conference=1967 International Electron Devices Meeting|date=October 1967|volume=13|pages=70|doi=10.1109/IEDM.1967.187833}} a type of MOSFET in which the oxide layer is replaced by a double layer of nitride and oxide. Nitride was used as a trapping layer instead of a floating gate, but its use was limited as it was considered inferior to a floating gate.{{cite book |last1=Prall |first1=Kirk |last2=Ramaswamy |first2=Nirmal |last3=Goda |first3=Akira |chapter=Chapter 2: A Synopsis on the State of the Art of NAND Memories |title=Charge-Trapping Non-Volatile Memories: Volume 1 – Basic and Advanced Devices |date=2015 |publisher=Springer |isbn=9783319152905 |pages=37–64 (39) |chapter-url=https://books.google.com/books?id=7vFUCgAAQBAJ&pg=PA39}}
Charge trap (CT) memory was introduced with MNOS devices in the late 1960s. It had a device structure and operating principles similar to floating-gate (FG) memory, but the main difference is that the charges are stored in a conducting material (typically a doped polysilicon layer) in FG memory, whereas CT memory stored charges in localized traps within a dielectric layer (typically made of silicon nitride).{{cite book |last1=Ioannou-Soufleridis |first1=V. |title=Charge-Trapping Non-Volatile Memories: Volume 1 – Basic and Advanced Devices |last2=Dimitrakis |first2=Panagiotis |last3=Normand |first3=Pascal |date=2015 |publisher=Springer |isbn=9783319152905 |pages=65–102 (65) |chapter=Chapter 3: Charge-Trap Memories with Ion Beam Modified ONO Stracks |chapter-url=https://books.google.com/books?id=7vFUCgAAQBAJ&pg=PA65}}
See also
References
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Category:Field-effect transistors
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