static induction transistor

{{Use American English|date = April 2019}}

{{Short description|Type of junction-gate field effect transistor}}

{{Single source|date=January 2019}}

The static induction transistor (SIT) is a type of field-effect transistor (FET) capable of high-speed and high-power operation, with low distortion and low noise.{{Cite journal |last=Nishizawa |first=Jun-ichi |date=December 15, 1974 |title=Field-effect transistor versus analog transistor (static induction transistor) |url=https://doi.org/10.1109/T-ED.1975.18103 |journal=IEEE Transactions on Electron Devices |volume=22 |issue=4 |pages=185–197|doi=10.1109/T-ED.1975.18103 |s2cid=37015648 |url-access=subscription }} It is a vertical structure device with short multichannel. The device was originally known as a VFET, with V being short for vertical.{{Cite web |last=Pass |first=Nelson |date=2013 |title=The Sony VFET Amplifier 40 Year Commemorative |url=https://www.firstwatt.com/pdf/art_sony_vfet_40yr.pdf |access-date=August 17, 2022 |website=First Watt}} Being a vertical device, the SIT structure offers advantages in obtaining higher breakdown voltages than a conventional FET. For the SIT, the breakdown voltage is not limited by the surface breakdown between gate and drain, allowing it to operate at a very high current and voltage. The SIT has a current-voltage characteristic similar to a vacuum tube triode and it was therefore used in high-end audio products, including power amplifiers from Sony in the second half of the 1970s and Yamaha from 1973-1980. The Sony n-channel SIT had the model number 2SK82 with its p-channel complement named 2SJ28.