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LDMOS

{{short description|Double-diffused MOSFET}}

LDMOS (laterally-diffused metal-oxide semiconductor)[https://dx.doi.org/10.1109/LED.2014.2353301 A. Elhami Khorasani, IEEE Electron Dev. Lett., vol. 35, pp. 1079-1081, 2014] is a planar double-diffused MOSFET (metal–oxide–semiconductor field-effect transistor) used in amplifiers, including microwave power amplifiers, RF power amplifiers and audio power amplifiers. These transistors are often fabricated on p/p+ silicon epitaxial layers. The fabrication of LDMOS devices mostly involves various ion-implantation and subsequent annealing cycles. As an example, the drift region of this power MOSFET is fabricated using up to three ion implantation sequences in order to achieve the appropriate doping profile needed to withstand high electric fields.

The silicon-based RF LDMOS (radio-frequency LDMOS) is the most widely used RF power amplifier in mobile networks,{{cite book |last1=Baliga |first1=Bantval Jayant |url=https://books.google.com/books?id=StJpDQAAQBAJ&pg=PA1 |title=Silicon RF Power MOSFETS |date=2005 |publisher=World Scientific |isbn=9789812561213 |pages=1–2 |author1-link=B. Jayant Baliga}}{{cite book |last1=Asif |first1=Saad |url=https://books.google.com/books?id=yg1mDwAAQBAJ&pg=PT134 |title=5G Mobile Communications: Concepts and Technologies |date=2018 |publisher=CRC Press |isbn=9780429881343 |page=134}}{{cite journal |last1=Theeuwen |first1=S. J. C. H. |last2=Qureshi |first2=J. H. |date=June 2012 |title=LDMOS Technology for RF Power Amplifiers |url=https://www.ampleon.com/documents/published-paper/AMP-PP-2017-0503.pdf |journal=IEEE Transactions on Microwave Theory and Techniques |volume=60 |issue=6 |pages=1755–1763 |bibcode=2012ITMTT..60.1755T |doi=10.1109/TMTT.2012.2193141 |issn=1557-9670 |s2cid=7695809}} enabling the majority of the world's cellular voice and data traffic.{{cite web |title=LDMOS Products and Solutions |url=https://www.nxp.com/products/rf/rf-power/ldmos-products-and-solutions:RF-LDMOS-Products-Sol |access-date=4 December 2019 |website=NXP Semiconductors}} LDMOS devices are widely used in RF power amplifiers for base-stations as the requirement is for high output power with a corresponding drain to source breakdown voltage usually above 60 volts.{{cite conference|last=van Rijs|first=F.|title=Status and trends of silicon LDMOS base station PA technologies to go beyond 2.5 GHz applications|book-title =Radio and Wireless Symposium, 2008 IEEE|year=2008|pages=69–72|doi=10.1109/RWS.2008.4463430|place=Orlando, FL}} Compared to other devices such as GaAs FETs they show a lower maximum power gain frequency.

Manufacturers of LDMOS devices and foundries offering LDMOS technologies include, Tower Semiconductor, TSMC, [http://www.lfoundry.com/en LFoundry], SAMSUNG, GLOBALFOUNDRIES, Vanguard International Semiconductor Corporation, STMicroelectronics, Infineon Technologies, RFMD, NXP Semiconductors (including former Freescale Semiconductor), SMIC, MK Semiconductors, Polyfet and Ampleon.

Photo gallery

{{Gallery

|title=Various RF LDMOS transistors

|width=160 | height=170

|align=center

|File:BLF2045.jpg

|BLF2045 silicon die. RF LDMOS 26 V 180 mA 2 GHz 10 dB 30 W SOT467C. Designed for broadband operation (1800 to 2200 MHz).

| File:BLF861A.jpg

|BLF861A RF LDMOS transistor. RF LDMOS transistor 860 MHz 150 W.

|File: BLF861A die photo.jpg

|BLF861A silicon die. RF LDMOS transistor 860 MHz 150 W. Designed for UHF operation.

}}

Applications

{{See also|List of MOSFET applications|Power MOSFET}}

Common applications of LDMOS technology include the following.

=RF LDMOS=

{{See also|RF CMOS#Applications}}

Common applications of RF LDMOS technology include the following.

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See also

References

{{Reflist}}

External links

  • [https://www.microwaves101.com/encyclopedias/ldmos Microwave Encyclopedia on LDMOS]
  • [https://www.vandenbergdesignagency.com/towerjazz/pdf/Power-Management-Overview-FINAL.pdf BCD process including customizable LDMOS]

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Category:Electronic design

Category:Transistor types

Category:MOSFETs