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List of MOSFET applications

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file:MOSFET Structure.png, showing gate (G), body (B), source (S), and drain (D) terminals. The gate is separated from the body by an insulating layer (pink).]]

The MOSFET (metal–oxide–semiconductor field-effect transistor) is a type of insulated-gate field-effect transistor (IGFET) that is fabricated by the controlled oxidation of a semiconductor, typically silicon. The voltage of the covered gate determines the electrical conductivity of the device; this ability to change conductivity with the amount of applied voltage can be used for amplifying or switching electronic signals.

The MOSFET is the basic building block of most modern electronics, and the most frequently manufactured device in history, with an estimated total of 13{{nbsp}}sextillion (1.3 × 1022) MOSFETs manufactured between 1960 and 2018. It is the most common semiconductor device in digital and analog circuits, and the most common power device. It was the first truly compact transistor that could be miniaturized and mass-produced for a wide range of uses. MOSFET scaling and miniaturization has been driving the rapid exponential growth of electronic semiconductor technology since the 1960s, and enable high-density integrated circuits (ICs) such as memory chips and microprocessors.

MOSFETs in integrated circuits are the primary elements of computer processors, semiconductor memory, image sensors, and most other types of integrated circuits. Discrete MOSFET devices are widely used in applications such as switch mode power supplies, variable-frequency drives, and other power electronics applications where each device may be switching thousands of watts. Radio-frequency amplifiers up to the UHF spectrum use MOSFET transistors as analog signal and power amplifiers. Radio systems also use MOSFETs as oscillators, or mixers to convert frequencies. MOSFET devices are also applied in audio-frequency power amplifiers for public address systems, sound reinforcement, and home and automobile sound systems.

Integrated circuits

{{See also|Integrated circuit|Invention of the integrated circuit|Three-dimensional integrated circuit}}

The MOSFET, invented by a Bell Labs team under Mohamed Atalla and Dawon Kahng between 1959 and 1960,{{Cite journal |last=KAHNG |first=D. |date=1961 |title=Silicon-Silicon Dioxide Surface Device |url=https://doi.org/10.1142/9789814503464_0076 |journal=Technical Memorandum of Bell Laboratories|pages=583–596 |doi=10.1142/9789814503464_0076 |isbn=978-981-02-0209-5 |url-access=subscription }}{{Cite book |last=Lojek |first=Bo |title=History of Semiconductor Engineering |date=2007 |publisher=Springer-Verlag Berlin Heidelberg |isbn=978-3-540-34258-8 |location=Berlin, Heidelberg |page=321}}{{cite book |last1=Lojek |first1=Bo |title=History of Semiconductor Engineering |date=2007 |publisher=Springer Science & Business Media |isbn=9783540342588 |page=120}}{{cite journal |last=Sah |first=Chih-Tang |author-link=Chih-Tang Sah |title=Evolution of the MOS transistor-from conception to VLSI |journal=Proceedings of the IEEE |date=October 1988 |volume=76 |issue=10 |pages=1280–1326 (1290) |doi=10.1109/5.16328 |bibcode=1988IEEEP..76.1280S |url=http://www.dejazzer.com/ece723/resources/Evolution_of_the_MOS_transistor.pdf |issn=0018-9219 |quote=Those of us active in silicon material and device research during 1956{{ndash}}1960 considered this successful effort by the Bell Labs group led by Atalla to stabilize the silicon surface the most important and significant technology advance, which blazed the trail that led to silicon integrated circuit technology developments in the second phase and volume production in the third phase.}} is the most widely used type of transistor and the most critical device component in integrated circuit (IC) chips.{{cite journal |last1=Kuo |first1=Yue |title=Thin Film Transistor Technology—Past, Present, and Future |journal=The Electrochemical Society Interface |date=1 January 2013 |volume=22 |issue=1 |pages=55–61 |doi=10.1149/2.F06131if |bibcode=2013ECSIn..22a..55K |url=https://www.electrochem.org/dl/interface/spr/spr13/spr13_p055_061.pdf |issn=1064-8208|doi-access=free }} Planar process, developed by Jean Hoerni at Fairchild Semiconductor in early 1959, was also critical to the invention of the monolithic integrated circuit chip by Robert Noyce later in 1959.{{cite book |last1=Lojek |first1=Bo |title=History of Semiconductor Engineering |date=2007 |publisher=Springer Science & Business Media |isbn=9783540342588 |pages=120 & 321–323}}{{cite book |last1=Bassett |first1=Ross Knox |title=To the Digital Age: Research Labs, Start-up Companies, and the Rise of MOS Technology |date=2007 |publisher=Johns Hopkins University Press |isbn=9780801886393 |page=46 |url=https://books.google.com/books?id=UUbB3d2UnaAC&pg=PA46}} This was followed by the development of clean rooms to reduce contamination to levels never before thought necessary, and coincided with the development of photolithography{{ cite web | url = http://www.computerhistory.org/semiconductor/timeline/1955-Photolithography.html | title = Computer History Museum – The Silicon Engine | 1955 – Photolithography Techniques Are Used to Make Silicon Devices | publisher = Computerhistory.org | access-date = 2 June 2012 }} which, along with surface passivation and the planar process, allowed circuits to be made in few steps.

Atalla realised that the main advantage of a MOS transistor was its ease of fabrication, particularly suiting it for use in the recently invented integrated circuits.{{cite book |last1=Moskowitz |first1=Sanford L. |url=https://books.google.com/books?id=2STRDAAAQBAJ&pg=PA165 |title=Advanced Materials Innovation: Managing Global Technology in the 21st century |date=2016 |publisher=John Wiley & Sons |isbn=9780470508923 |pages=165–167}} In contrast to bipolar transistors which required a number of steps for the p–n junction isolation of transistors on a chip, MOSFETs required no such steps but could be easily isolated from each other.{{cite book |last1=Bassett |first1=Ross Knox |title=To the Digital Age: Research Labs, Start-up Companies, and the Rise of MOS Technology |date=2002 |publisher=Johns Hopkins University Press |isbn=978-0-8018-6809-2 |pages=53–4 |url=https://books.google.com/books?id=Qge1DUt7qDUC&pg=PA53}} Its advantage for integrated circuits was re-iterated by Dawon Kahng in 1961.{{cite book |last1=Bassett |first1=Ross Knox |title=To the Digital Age: Research Labs, Start-up Companies, and the Rise of MOS Technology |date=2007 |publisher=Johns Hopkins University Press |isbn=9780801886393 |pages=22 |url=https://books.google.com/books?id=UUbB3d2UnaAC&pg=PA22}} The Si–SiO2 system possessed the technical attractions of low cost of production (on a per circuit basis) and ease of integration. These two factors, along with its rapidly scaling miniaturization and low energy consumption, led to the MOSFET becoming the most widely used type of transistor in IC chips.

The earliest experimental MOS IC to be demonstrated was a 16-transistor chip built by Fred Heiman and Steven Hofstein at RCA in 1962.{{cite web |title=Tortoise of Transistors Wins the Race – CHM Revolution |url=https://www.computerhistory.org/revolution/digital-logic/12/279 |website=Computer History Museum |access-date=22 July 2019}} General Microelectronics later introduced the first commercial MOS integrated circuits in 1964, consisting of 120 p-channel transistors.{{cite web|url=http://www.computerhistory.org/semiconductor/timeline/1964-Commecial.html|title=1964 – First Commercial MOS IC Introduced|website=Computer History Museum}} It was a 20-bit shift register, developed by Robert Norman and Frank Wanlass.{{cite journal |last1=Kilby |first1=J. S. |title=Miniaturized electronic circuits [US Patent No. 3,138, 743] |journal=IEEE Solid-State Circuits Society Newsletter |year=2007 |volume=12 |issue=2 |pages=44–54 |doi=10.1109/N-SSC.2007.4785580 |url=https://www.researchgate.net/publication/245509003 |issn=1098-4232}} In 1967, Bell Labs researchers Robert Kerwin, Donald Klein and John Sarace developed the self-aligned gate (silicon-gate) MOS transistor, which Fairchild Semiconductor researchers Federico Faggin and Tom Klein used to develop the first silicon-gate MOS IC.{{cite web |title=1968: Silicon Gate Technology Developed for ICs |url=https://www.computerhistory.org/siliconengine/silicon-gate-technology-developed-for-ics/ |website=Computer History Museum |access-date=22 July 2019}}

= Chips =

File:Intel C4004 1a.jpg (1971), the first single-chip microprocessor. It is a 4-bit central processing unit (CPU), fabricated on a silicon-gate PMOS large-scale integration (LSI) chip with a 10 μm process.]]

There are various different types of MOS IC chips, which include the following.{{cite book|url=https://ethw.org/w/images/1/1e/Memories_-_A_Personal_History_of_Bell_Telephone_Laboratories.pdf|title=Memories: A Personal History of Bell Telephone Laboratories|publisher=Institute of Electrical and Electronics Engineers|year=2011|isbn=978-1463677978|page=59}}

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= Large-scale integration =

{{See also|Large-scale integration|Very large-scale integration}}

With its high scalability,{{cite journal |last1=Motoyoshi |first1=M. |title=Through-Silicon Via (TSV) |journal=Proceedings of the IEEE |year=2009 |volume=97 |issue=1 |pages=43–48 |doi=10.1109/JPROC.2008.2007462 |s2cid=29105721 |url=https://pdfs.semanticscholar.org/8a44/93b535463daa7d7317b08d8900a33b8cbaf4.pdf |archive-url=https://web.archive.org/web/20190719120523/https://pdfs.semanticscholar.org/8a44/93b535463daa7d7317b08d8900a33b8cbaf4.pdf |url-status=dead |archive-date=2019-07-19 |issn=0018-9219}} and much lower power consumption and higher density than bipolar junction transistors,{{cite news |title=Transistors Keep Moore's Law Alive |url=https://www.eetimes.com/author.asp?section_id=36&doc_id=1334068 |access-date=18 July 2019 |work=EETimes |date=12 December 2018}} the MOSFET made it possible to build high-density IC chips.{{cite web |title=Who Invented the Transistor? |url=https://www.computerhistory.org/atchm/who-invented-the-transistor/ |website=Computer History Museum |date=4 December 2013 |access-date=20 July 2019}} By 1964, MOS chips had reached higher transistor density and lower manufacturing costs than bipolar chips. MOS chips further increased in complexity at a rate predicted by Moore's law, leading to large-scale integration (LSI) with hundreds of MOSFETs on a chip by the late 1960s.{{cite journal |last1=Shirriff |first1=Ken |title=The Surprising Story of the First Microprocessors |journal=IEEE Spectrum |volume=53 |issue=9 |pages=48–54 |date=30 August 2016 |publisher=Institute of Electrical and Electronics Engineers |url=https://spectrum.ieee.org/the-surprising-story-of-the-first-microprocessors |access-date=13 October 2019|doi=10.1109/MSPEC.2016.7551353 |s2cid=32003640 |url-access=subscription }} MOS technology enabled the integration of more than 10,000 transistors on a single LSI chip by the early 1970s,{{cite journal |last1=Hittinger |first1=William C. |title=Metal–Oxide–Semiconductor Technology |journal=Scientific American |year=1973 |volume=229 |issue=2 |pages=48–59 |issn=0036-8733|jstor=24923169 |doi=10.1038/scientificamerican0873-48 |bibcode=1973SciAm.229b..48H }} before later enabling very large-scale integration (VLSI).{{cite web |last1=Sze |first1=Simon Min |author1-link=Simon Sze |title=Metal–oxide–semiconductor field-effect transistors |url=https://www.britannica.com/technology/semiconductor-device/Metal-oxide-semiconductor-field-effect-transistors |access-date=21 July 2019 |website=Encyclopædia Britannica}}

= Microprocessors =

{{See also|Microcontroller|Microprocessor chronology}}

The MOSFET is the basis of every microprocessor,{{cite book |last1=Colinge |first1=Jean-Pierre |url=https://books.google.com/books?id=FvjUCwAAQBAJ&pg=PA2 |title=Nanowire Transistors: Physics of Devices and Materials in One Dimension |last2=Greer |first2=James C. |date=2016 |publisher=Cambridge University Press |isbn=9781107052406 |page=2}} and was responsible for the invention of the microprocessor.{{cite book |last1=Schwarz |first1=A. F. |title=Handbook of VLSI Chip Design and Expert Systems |date=2014 |publisher=Academic Press |isbn=9781483258058 |page=16 |url=https://books.google.com/books?id=LqOjBQAAQBAJ&pg=PA16}} The origins of both the microprocessor and the microcontroller can be traced back to the invention and development of MOS technology. The application of MOS LSI chips to computing was the basis for the first microprocessors, as engineers began recognizing that a complete computer processor could be contained on a single MOS LSI chip.

The earliest microprocessors were all MOS chips, built with MOS LSI circuits. The first multi-chip microprocessors, the Four-Phase Systems AL1 in 1969 and the Garrett AiResearch MP944 in 1970, were developed with multiple MOS LSI chips. The first commercial single-chip microprocessor, the Intel 4004, was developed by Federico Faggin, using his silicon-gate MOS IC technology, with Intel engineers Marcian Hoff and Stan Mazor, and Busicom engineer Masatoshi Shima.{{cite web |title=1971: Microprocessor Integrates CPU Function onto a Single Chip |website=The Silicon Engine |url=https://www.computerhistory.org/siliconengine/microprocessor-integrates-cpu-function-onto-a-single-chip/ |publisher=Computer History Museum |access-date=22 July 2019}} With the arrival of CMOS microprocessors in 1975, the term "MOS microprocessors" began to refer to chips fabricated entirely from PMOS logic or fabricated entirely from NMOS logic, contrasted with "CMOS microprocessors" and "bipolar bit-slice processors".{{cite web|first=Robert H.|last=Cushman|url=http://www.swtpc.com/mholley/Microprocessors/EDN_Sep_20_1975_6502.pdf|title=2-1/2-generation μP's-$10 parts that perform like low-end mini's|publisher=EDN |date=20 September 1975}}

CMOS circuits

{{Main|CMOS}}

File:KL NVIDIA Geforce 256.jpg GeForce 256 (1999), an early graphics processing unit (GPU), fabricated on TSMC's 220{{nbsp}}nm CMOS integrated circuit (IC) chip{{cite web |last1=Singer |first1=Graham |title=History of the Modern Graphics Processor, Part 2 |url=https://www.techspot.com/article/653-history-of-the-gpu-part-2/ |website=TechSpot |date=3 April 2013 |access-date=21 July 2019}}]]

Complementary metal–oxide–semiconductor (CMOS) logic{{cite web|url=http://www.computerhistory.org/semiconductor/timeline/1963-CMOS.html |title=Computer History Museum – The Silicon Engine | 1963 – Complementary MOS Circuit Configuration is Invented |publisher=Computerhistory.org |access-date=2 June 2012}} was developed by Chih-Tang Sah and Frank Wanlass at Fairchild Semiconductor in 1963.{{cite web |title=1963: Complementary MOS Circuit Configuration is Invented |url=https://www.computerhistory.org/siliconengine/complementary-mos-circuit-configuration-is-invented/ |website=Computer History Museum |access-date=6 July 2019}} CMOS had lower power consumption, but was initially slower than NMOS, which was more widely used for computers in the 1970s. In 1978, Hitachi introduced the twin-well CMOS process, which allowed CMOS to match the performance of NMOS with less power consumption. The twin-well CMOS process eventually overtook NMOS as the most common semiconductor manufacturing process for computers in the 1980s.{{cite web |title=1978: Double-well fast CMOS SRAM (Hitachi) |url=http://www.shmj.or.jp/english/pdf/ic/exhibi727E.pdf |website=Semiconductor History Museum of Japan |access-date=5 July 2019}} By the 1980s CMOS logic consumed over {{#expr:110/15 round 0}}{{nbsp}}times less power than NMOS logic, and about 100,000 times less power than bipolar transistor-transistor logic (TTL).{{cite book |last1=Higgins |first1=Richard J. |title=Electronics with digital and analog integrated circuits |date=1983 |publisher=Prentice-Hall |isbn=9780132507042 |page=[https://archive.org/details/electronicswithd0000higg/page/n120 101] |url=https://archive.org/details/electronicswithd0000higg |url-access=registration |quote=The dominant difference is power: CMOS gates can consume about 100,000 times less power than their TTL equivalents!}}

= Digital =

The growth of digital technologies like the microprocessor has provided the motivation to advance MOSFET technology faster than any other type of silicon-based transistor.{{cite web|url=http://www.computerhistory.org/microprocessors/ |title=Computer History Museum – Exhibits – Microprocessors |publisher=Computerhistory.org |access-date=2 June 2012}} A big advantage of MOSFETs for digital switching is that the oxide layer between the gate and the channel prevents DC current from flowing through the gate, further reducing power consumption and giving a very large input impedance. The insulating oxide between the gate and channel effectively isolates a MOSFET in one logic stage from earlier and later stages, which allows a single MOSFET output to drive a considerable number of MOSFET inputs. Bipolar transistor-based logic (such as TTL) does not have such a high fanout capacity. This isolation also makes it easier for the designers to ignore to some extent loading effects between logic stages independently. That extent is defined by the operating frequency: as frequencies increase, the input impedance of the MOSFETs decreases.

= Analog =

{{See|CMOS amplifier|Mixed-signal integrated circuit}}

The MOSFET's advantages in digital circuits do not translate into supremacy in all analog circuits. The two types of circuit draw upon different features of transistor behavior. Digital circuits switch, spending most of their time either fully on or fully off. The transition from one to the other is only of concern with regards to speed and charge required. Analog circuits depend on operation in the transition region where small changes to V{{sub|gs}} can modulate the output (drain) current. The JFET and bipolar junction transistor (BJT) are preferred for accurate matching (of adjacent devices in integrated circuits), higher transconductance and certain temperature characteristics which simplify keeping performance predictable as circuit temperature varies.

Nevertheless, MOSFETs are widely used in many types of analog circuits because of their own advantages (zero gate current, high and adjustable output impedance and improved robustness vs. BJTs which can be permanently degraded by even lightly breaking down the emitter-base).{{Vague|date=January 2016}} The characteristics and performance of many analog circuits can be scaled up or down by changing the sizes (length and width) of the MOSFETs used. By comparison, in bipolar transistors the size of the device does not significantly affect its performance.{{citation needed|date=January 2016}} MOSFETs' ideal characteristics regarding gate current (zero) and drain-source offset voltage (zero) also make them nearly ideal switch elements, and also make switched capacitor analog circuits practical. In their linear region, MOSFETs can be used as precision resistors, which can have a much higher controlled resistance than BJTs. In high power circuits, MOSFETs sometimes have the advantage of not suffering from thermal runaway as BJTs do.{{Dubious|reason=Depends on circuit topology?|date=January 2016}} Also, MOSFETs can be configured to perform as capacitors and gyrator circuits which allow op-amps made from them to appear as inductors, thereby allowing all of the normal analog devices on a chip (except for diodes, which can be made smaller than a MOSFET anyway) to be built entirely out of MOSFETs. This means that complete analog circuits can be made on a silicon chip in a much smaller space and with simpler fabrication techniques. MOSFETS are ideally suited to switch inductive loads because of tolerance to inductive kickback.

Some ICs combine analog and digital MOSFET circuitry on a single mixed-signal integrated circuit, making the needed board space even smaller. This creates a need to isolate the analog circuits from the digital circuits on a chip level, leading to the use of isolation rings and silicon on insulator (SOI). Since MOSFETs require more space to handle a given amount of power than a BJT, fabrication processes can incorporate BJTs and MOSFETs into a single device. Mixed-transistor devices are called bi-FETs (bipolar FETs) if they contain just one BJT-FET and BiCMOS (bipolar-CMOS) if they contain complementary BJT-FETs. Such devices have the advantages of both insulated gates and higher current density.

= RF CMOS =

{{Main|RF CMOS}}

File:AVM BlueFRITZ! USB v1.0.jpg dongle. RF CMOS mixed-signal integrated circuits are widely used in nearly all modern Bluetooth devices.]]

In the late 1980s, Asad Abidi pioneered RF CMOS technology, which uses MOS VLSI circuits, while working at UCLA. This changed the way in which RF circuits were designed, away from discrete bipolar transistors and towards CMOS integrated circuits. As of 2008, the radio transceivers in all wireless networking devices and modern mobile phones are mass-produced as RF CMOS devices. RF CMOS is also used in nearly all modern Bluetooth and wireless LAN (WLAN) devices.{{cite journal |last1=O'Neill |first1=A. |title=Asad Abidi Recognized for Work in RF-CMOS |journal=IEEE Solid-State Circuits Society Newsletter |year=2008 |volume=13 |issue=1 |pages=57–58 |doi=10.1109/N-SSC.2008.4785694 |issn=1098-4232}}

Analog switches

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MOSFET analog switches use the MOSFET to pass analog signals when on, and as a high impedance when off. Signals flow in both directions across a MOSFET switch. In this application, the drain and source of a MOSFET exchange places depending on the relative voltages of the source/drain electrodes. The source is the more negative side for an N-MOS or the more positive side for a P-MOS. All of these switches are limited on what signals they can pass or stop by their gate–source, gate–drain, and source–drain voltages; exceeding the voltage, current, or power limits will potentially damage the switch.

= Single-type =

This analog switch uses a four-terminal simple MOSFET of either P or N type.

In the case of an n-type switch, the body is connected to the most negative supply (usually GND) and the gate is used as the switch control. Whenever the gate voltage exceeds the source voltage by at least a threshold voltage, the MOSFET conducts. The higher the voltage, the more the MOSFET can conduct. An N-MOS switch passes all voltages less than V{{sub|gate}} − V{{sub|tn}}. When the switch is conducting, it typically operates in the linear (or ohmic) mode of operation, since the source and drain voltages will typically be nearly equal.

In the case of a P-MOS, the body is connected to the most positive voltage, and the gate is brought to a lower potential to turn the switch on. The P-MOS switch passes all voltages higher than V{{sub|gate}} − V{{sub|tp}} (threshold voltage V{{sub|tp}} is negative in the case of enhancement-mode P-MOS).

= Dual-type (CMOS) =

This "complementary" or CMOS type of switch uses one P-MOS and one N-MOS FET to counteract the limitations of the single-type switch. The FETs have their drains and sources connected in parallel, the body of the P-MOS is connected to the high potential (VDD) and the body of the N-MOS is connected to the low potential (gnd). To turn the switch on, the gate of the P-MOS is driven to the low potential and the gate of the N-MOS is driven to the high potential. For voltages between VDD − Vtn and gnd − Vtp, both FETs conduct the signal; for voltages less than gnd − Vtp, the N-MOS conducts alone; and for voltages greater than VDD − Vtn, the P-MOS conducts alone.

The voltage limits for this switch are the gate–source, gate–drain and source–drain voltage limits for both FETs. Also, the P-MOS is typically two to three times wider than the N-MOS, so the switch will be balanced for speed in the two directions.

Tri-state circuitry sometimes incorporates a CMOS MOSFET switch on its output to provide for a low-ohmic, full-range output when on, and a high-ohmic, mid-level signal when off.

MOS memory

{{Main|MOS memory}}

{{See|Computer memory|Memory cell (computing)}}

File:16 GiB-DDR4-RAM-Riegel RAM019FIX Small Crop 90 PCNT.png SDRAM dual in-line memory module (DIMM). It is a type of DRAM (dynamic random-access memory), which uses MOS memory cells consisting of MOSFETs and MOS capacitors.]]

The advent of the MOSFET enabled the practical use of MOS transistors as memory cell storage elements, a function previously served by magnetic cores in computer memory. The first modern computer memory was introduced in 1965, when John Schmidt at Fairchild Semiconductor designed the first MOS semiconductor memory, a 64-bit MOS SRAM (static random-access memory).{{Cite book|url=https://books.google.com/books?id=kG4rAQAAIAAJ&q=John+Schmidt|title=Solid State Design – Vol. 6|date=1965|publisher=Horizon House}} SRAM became an alternative to magnetic-core memory, but required six MOS transistors for each bit of data.{{cite web |title=DRAM |url=https://www.ibm.com/ibm/history/ibm100/us/en/icons/dram/ |website=IBM100 |publisher=IBM |access-date=20 September 2019 |date=9 August 2017}}

MOS technology is the basis for DRAM (dynamic random-access memory). In 1966, Dr. Robert H. Dennard at the IBM Thomas J. Watson Research Center was working on MOS memory. While examining the characteristics of MOS technology, he found it was capable of building capacitors, and that storing a charge or no charge on the MOS capacitor could represent the 1 and 0 of a bit, while the MOS transistor could control writing the charge to the capacitor. This led to his development of a single-transistor DRAM memory cell. In 1967, Dennard filed a patent under IBM for a single-transistor DRAM (dynamic random-access memory) memory cell, based on MOS technology.{{cite web |title=Robert Dennard |url=https://www.britannica.com/biography/Robert-Dennard |website=Encyclopædia Britannica |access-date=8 July 2019}} MOS memory enabled higher performance, was cheaper, and consumed less power, than magnetic-core memory, leading to MOS memory overtaking magnetic core memory as the dominant computer memory technology by the early 1970s.{{cite web |title=1970: MOS Dynamic RAM Competes with Magnetic Core Memory on Price |url=https://www.computerhistory.org/siliconengine/mos-dynamic-ram-competes-with-magnetic-core-memory-on-price/ |website=Computer History Museum |access-date=29 July 2019}}

Frank Wanlass, while studying MOSFET structures in 1963, noted the movement of charge through oxide onto a gate. While he did not pursue it, this idea would later become the basis for EPROM (erasable programmable read-only memory) technology.{{cite web |title= People | the Silicon Engine | Computer History Museum|work=People|url=https://www.computerhistory.org/siliconengine/people/ |publisher=Computer History Museum |access-date=17 August 2019}} In 1967, Dawon Kahng and Simon Sze proposed that floating-gate memory cells, consisting of floating-gate MOSFETs (FGMOS), could be used to produce reprogrammable ROM (read-only memory).{{cite web |title=1971: Reusable semiconductor ROM introduced |url=https://www.computerhistory.org/storageengine/reusable-semiconductor-rom-introduced/ |website=Computer History Museum |access-date=19 June 2019}} Floating-gate memory cells later became the basis for non-volatile memory (NVM) technologies including EPROM, EEPROM (electrically erasable programmable ROM) and flash memory.{{cite book |last1=Bez |first1=R. |last2=Pirovano |first2=A. |title=Advances in Non-Volatile Memory and Storage Technology |date=2019 |publisher=Woodhead Publishing |isbn=9780081025857}}

= Types of MOS memory =

{{See|MOS memory#Applications}}

File:SanDisk-Cruzer-USB-4GB-ThumbDrive.jpg. It uses flash memory, a type of MOS memory consisting of floating-gate MOSFET memory cells.]]

There are various different types of MOS memory. The following list includes various different MOS memory types.{{cite book|url=https://books.google.com/books?id=Lv_EDgAAQBAJ&pg=PA314|title=Nanometer CMOS ICs: From Basics to ASICs|last1=Veendrick|first1=Harry J. M.|date=2017|publisher=Springer|isbn=9783319475974|edition=2nd|pages=314–5}}

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MOS sensors

A number of MOSFET sensors have been developed, for measuring physical, chemical, biological and environmental parameters.{{cite journal |last1=Bergveld |first1=Piet |author1-link=Piet Bergveld |title=The impact of MOSFET-based sensors |journal=Sensors and Actuators |date=October 1985 |volume=8 |issue=2 |pages=109–127 |doi=10.1016/0250-6874(85)87009-8 |bibcode=1985SeAc....8..109B |url=https://core.ac.uk/download/pdf/11473091.pdf |issn=0250-6874 |access-date=29 December 2019 |archive-date=26 April 2021 |archive-url=https://web.archive.org/web/20210426192332/https://core.ac.uk/download/pdf/11473091.pdf |url-status=dead }} The earliest MOSFET sensors include the open-gate FET (OGFET) introduced by Johannessen in 1970, the ion-sensitive field-effect transistor (ISFET) invented by Piet Bergveld in 1970,{{cite journal|author=Chris Toumazou |author2=Pantelis Georgiou |url=https://www.researchgate.net/publication/260616066 |title=40 years of ISFET technology:From neuronal sensing to DNA sequencing |journal=Electronics Letters |date=December 2011 |access-date=13 May 2016}} the adsorption FET (ADFET) patented by P.F. Cox in 1974, and a hydrogen-sensitive MOSFET demonstrated by I. Lundstrom, M.S. Shivaraman, C.S. Svenson and L. Lundkvist in 1975. The ISFET is a special type of MOSFET with a gate at a certain distance, and where the metal gate is replaced by an ion-sensitive membrane, electrolyte solution and reference electrode.{{cite journal |last1=Schöning |first1=Michael J. |last2=Poghossian |first2=Arshak |title=Recent advances in biologically sensitive field-effect transistors (BioFETs) |journal=Analyst |date=10 September 2002 |volume=127 |issue=9 |pages=1137–1151 |doi=10.1039/B204444G |pmid=12375833 |bibcode=2002Ana...127.1137S |url=http://juser.fz-juelich.de/record/16078/files/12968.pdf |issn=1364-5528}}

By the mid-1980s, numerous other MOSFET sensors had been developed, including the gas sensor FET (GASFET), surface accessible FET (SAFET), charge flow transistor (CFT), pressure sensor FET (PRESSFET), chemical field-effect transistor (ChemFET), reference ISFET (REFET), biosensor FET (BioFET), enzyme-modified FET (ENFET) and immunologically modified FET (IMFET). By the early 2000s, BioFET types such as the DNA field-effect transistor (DNAFET), gene-modified FET (GenFET) and cell-potential BioFET (CPFET) had been developed.

The two main types of image sensors used in digital imaging technology are the charge-coupled device (CCD) and the active-pixel sensor (CMOS sensor). Both CCD and CMOS sensors are based on MOS technology, with the CCD based on MOS capacitors and the CMOS sensor based on MOS transistors.{{cite book |last1=Williams |first1=J. B. |title=The Electronics Revolution: Inventing the Future |date=2017 |publisher=Springer |isbn=9783319490885 |pages=245, 249–50 |url=https://books.google.com/books?id=v4QlDwAAQBAJ&pg=PA245}}

= Image sensors =

{{Main|Image sensor|Charge-coupled device|Active-pixel sensor}}

File:Matrixw.jpg. MOS image sensors are the basis for digital cameras, digital imaging, camera phones, action cameras, and optical mouse devices.]]

MOS technology is the basis for modern image sensors, including the charge-coupled device (CCD) and the CMOS active-pixel sensor (CMOS sensor), used in digital imaging and digital cameras. Willard Boyle and George E. Smith developed the CCD in 1969. While researching the MOS process, they realized that an electric charge was the analogy of the magnetic bubble and that it could be stored on a tiny MOS capacitor. As it was fairly straightforward to fabricate a series of MOS capacitors in a row, they connected a suitable voltage to them so that the charge could be stepped along from one to the next. The CCD is a semiconductor circuit that was later used in the first digital video cameras for television broadcasting.{{cite journal|last1=Boyle|first1=William S|last2=Smith|first2=George E.|year=1970|title=Charge Coupled Semiconductor Devices|journal=Bell Syst. Tech. J.|volume=49|issue=4|pages=587–593|doi=10.1002/j.1538-7305.1970.tb01790.x|bibcode=1970BSTJ...49..587B }}

The MOS active-pixel sensor (APS) was developed by Tsutomu Nakamura at Olympus in 1985.{{cite journal |last1=Matsumoto |first1=Kazuya |last2=Nakamura |first2=Tsutomu |last3=Yusa |first3=Atsushi |last4=Nagai |first4=Shohei |display-authors=1|year=1985 |title=A new MOS phototransistor operating in a non-destructive readout mode |journal=Japanese Journal of Applied Physics |volume=24 |issue=5A |page=L323|doi=10.1143/JJAP.24.L323 |bibcode=1985JaJAP..24L.323M |s2cid=108450116 }} The CMOS active-pixel sensor was later developed by Eric Fossum and his team at NASA's Jet Propulsion Laboratory in the early 1990s.Eric R. Fossum (1993), "Active Pixel Sensors: Are CCD's Dinosaurs?" Proc. SPIE Vol. 1900, p. 2–14, Charge-Coupled Devices and Solid State Optical Sensors III, Morley M. Blouke; Ed.

MOS image sensors are widely used in optical mouse technology. The first optical mouse, invented by Richard F. Lyon at Xerox in 1980, used a 5{{nbsp}}μm NMOS sensor chip.{{cite book |last1=Lyon |first1=Richard F. |author1-link=Richard F. Lyon |chapter=The Optical Mouse: Early Biomimetic Embedded Vision |title=Advances in Embedded Computer Vision |date=2014 |publisher=Springer |isbn=9783319093871 |pages=3–22 [3]|chapter-url=https://books.google.com/books?id=p_GbBQAAQBAJ&pg=PA3}}{{cite book | chapter = The Optical Mouse, and an Architectural Methodology for Smart Digital Sensors | title = VLSI Systems and Computations | pages = 1–19 | last1=Lyon | first1=Richard F. | author1-link=Richard F. Lyon |editor1=H. T. Kung |editor2=Robert F. Sproull |editor3=Guy L. Steele | publisher=Computer Science Press |date=August 1981 | doi=10.1007/978-3-642-68402-9_1 | chapter-url=http://bitsavers.trailing-edge.com/pdf/xerox/parc/techReports/VLSI-81-1_The_Optical_Mouse.pdf| isbn = 978-3-642-68404-3 | s2cid = 60722329 }} Since the first commercial optical mouse, the IntelliMouse introduced in 1999, most optical mouse devices use CMOS sensors.{{cite web |last1=Brain |first1=Marshall |last2=Carmack |first2=Carmen |title=How Computer Mice Work |url=https://computer.howstuffworks.com/mouse4.htm |website=HowStuffWorks |access-date=9 October 2019 |date=24 April 2000}}

= Other sensors =

MOS sensors, also known as MOSFET sensors, are widely used to measure physical, chemical, biological and environmental parameters. The ion-sensitive field-effect transistor (ISFET), for example, is widely used in biomedical applications.

MOSFETs are also widely used in microelectromechanical systems (MEMS), as silicon MOSFETs could interact and communicate with the surroundings and process things such as chemicals, motions and light.{{cite book |last1=Rai-Choudhury |first1=P. |title=MEMS and MOEMS Technology and Applications |date=2000 |publisher=SPIE Press |isbn=9780819437167 |pages=ix, 3–4 |url=https://books.google.com/books?id=v6KOTaI2DhAC&pg=PR9}} An early example of a MEMS device is the resonant-gate transistor, an adaptation of the MOSFET, developed by Harvey C. Nathanson in 1965.{{cite journal|vauthors=Nathanson HC, Wickstrom RA|year=1965|title=A Resonant-Gate Silicon Surface Transistor with High-Q Band-Pass Properties|journal=Appl. Phys. Lett.|volume=7|issue=4|pages=84–86|doi=10.1063/1.1754323|bibcode=1965ApPhL...7...84N}}

Common applications of other MOS sensors include the following.

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Power MOSFET

{{See also|Power MOSFET|LDMOS#Applications|VMOS|FET amplifier|MOS-controlled thyristor|Power electronics|Power semiconductor device}}

file:D2PAK.JPGs in D2PAK surface-mount packages. Operating as switches, each of these components can sustain a blocking voltage of 120{{nbsp}}V in the off state, and can conduct a con­ti­nuous current of 30 A in the on state, dissipating up to about 100 W and controlling a load of over 2000 W. A matchstick is pictured for scale.]]

The power MOSFET, which is commonly used in power electronics, was developed in the early 1970s.{{cite book |last1=Irwin |first1=J. David |title=The Industrial Electronics Handbook |date=1997 |publisher=CRC Press |isbn=9780849383434 |page=218 |url=https://books.google.com/books?id=s0k9kGs5bHYC&pg=PA218}} The power MOSFET enables low gate drive power, fast switching speed, and advanced paralleling capability.{{cite web |title=Power MOSFET Basics |url=http://www.aosmd.com/res/application_notes/mosfets/Power_MOSFET_Basics.pdf |website=Alpha & Omega Semiconductor |access-date=29 July 2019}}

The power MOSFET is the most widely used power device in the world. Advantages over bipolar junction transistors in power electronics include MOSFETs not requiring a continuous flow of drive current to remain in the ON state, offering higher switching speeds, lower switching power losses, lower on-resistances, and reduced susceptibility to thermal runaway.{{cite web |title=Power Supply Technology – Buck DC/DC Converters |url=https://www.mouser.co.uk/applications/power-supply-topology-buck/ |website=Mouser Electronics |access-date=11 August 2019}} The power MOSFET had an impact on power supplies, enabling higher operating frequencies, size and weight reduction, and increased volume production.{{cite book |last1=Grant |first1=Duncan Andrew |last2=Gowar |first2=John |title=Power MOSFETS: theory and applications |date=1989 |publisher=Wiley |isbn=9780471828679 |page=239 |url=https://books.google.com/books?id=ZiZTAAAAMAAJ}}

Switching power supplies are the most common applications for power MOSFETs.{{cite web |date=23 May 2016 |title=Applying MOSFETs to Today's Power-Switching Designs |url=https://www.electronicdesign.com/mosfets/applying-mosfets-today-s-power-switching-designs |access-date=10 August 2019 |website=Electronic Design}} They are also widely used for MOS RF power amplifiers, which enabled the transition of mobile networks from analog to digital in the 1990s. This led to the wide proliferation of wireless mobile networks, which revolutionised telecommunications systems. The LDMOS in particular is the most widely used power amplifier in mobile networks such as 2G, 3G, 4G and 5G, as well as broadcasting and amateur radio.{{Cite web |title=A 600W broadband HF/6m amplifier using affordable LDMOS devices |date=27 October 2019 |url=https://qrpblog.com/2019/10/a-600w-broadband-hf-amplifier-using-affordable-ldmos-devices/}} Over 50{{nbsp}}billion discrete power MOSFETs are shipped annually, as of 2018. They are widely used for automotive, industrial and communications systems in particular.{{cite journal |last1=Carbone |first1=James |title=Buyers can expect 30-week lead times and higher tags to continue for MOSFETs |journal=Electronics Sourcing |date=September–October 2018 |pages=18–19 |url=http://www.electronics-sourcing.com/wp-content/uploads/2018/08/ESE-SepOct18.pdf}} Power MOSFETs are commonly used in automotive electronics, particularly as switching devices in electronic control units,{{cite web |title=Automotive Power MOSFETs |url=https://www.fujielectric.com/company/tech/pdf/r50-2/03.pdf |website=Fuji Electric |access-date=10 August 2019}} and as power converters in modern electric vehicles.{{cite journal |last1=Gosden |first1=D.F. |title=Modern Electric Vehicle Technology using an AC Motor Drive |journal=Journal of Electrical and Electronics Engineering |date=March 1990 |volume=10 |issue=1 |pages=21–7 |url=https://trid.trb.org/view/353176 |publisher=Institution of Engineers Australia |issn=0725-2986}} The insulated-gate bipolar transistor (IGBT), a hybrid MOS-bipolar transistor, is also used for a wide variety of applications.{{cite web |title=NIHF Inductee Bantval Jayant Baliga Invented IGBT Technology |url=https://www.invent.org/inductees/bantval-jayant-baliga |website=National Inventors Hall of Fame |access-date=17 August 2019}}

LDMOS, a power MOSFET with lateral structure, is commonly used in high-end audio amplifiers and high-power PA systems. Their advantage is a better behaviour in the saturated region (corresponding to the linear region of a bipolar transistor) than the vertical MOSFETs. Vertical MOSFETs are designed for switching applications.{{cite web|url=http://www.element-14.com/community/docs/DOC-18275/l/power-mosfet-basics-understanding-gate-charge-and-using-it-to-assess-switching-performance|title=Power MOSFET Basics: Understanding Gate Charge and Using It To Assess Switching Performance|website=element14|access-date=27 November 2010|archive-url=https://web.archive.org/web/20140630044120/http://www.element-14.com/community/docs/DOC-18275/l/power-mosfet-basics-understanding-gate-charge-and-using-it-to-assess-switching-performance |archive-date=30 June 2014 }}

= DMOS and VMOS =

{{See|LDMOS#Applications}}

Power MOSFETs, including DMOS, LDMOS and VMOS devices, are commonly used for a wide range of other applications, which include the following.

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= RF DMOS =

{{See|RF CMOS#Applications}}

RF DMOS, also known as RF power MOSFET, is a type of DMOS power transistor designed for radio-frequency (RF) applications. It is used in various radio and RF applications, which include the following.{{cite web |title=RF DMOS Transistors |url=https://www.st.com/en/radio-frequency-transistors/rf-dmos-transistors.html |website=STMicroelectronics |access-date=22 December 2019}}{{cite web |title=AN1256: Application note {{ndash}} High-power RF MOSFET targets VHF applications |url=https://www.st.com/content/ccc/resource/technical/document/application_note/07/e8/f6/20/61/db/43/d2/CD00004135.pdf/files/CD00004135.pdf/jcr:content/translations/en.CD00004135.pdf |website=ST Microelectronics |date=July 2007 |access-date=22 December 2019}}

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Consumer electronics

MOSFETs are fundamental to the consumer electronics industry. According to Colinge, numerous consumer electronics would not exist without the MOSFET, such as digital wristwatches, pocket calculators, and video games, for example.{{cite book |last1=Colinge |first1=Jean-Pierre |url=https://books.google.com/books?id=-o5bAG5pR3AC&pg=PA165 |title=Physics of Semiconductor Devices |last2=Colinge |first2=C. A. |date=2005 |publisher=Springer Science & Business Media |isbn=9780387285238 |page=165}}

MOSFETs are commonly used for a wide range of consumer electronics, which include the following devices listed. Computers or telecommunication devices (such as phones) are not included here, but are listed separately in the Information and communications technology (ICT) section below.

File:Casio calculator JS-20WK in 201901 002.jpg pocket calculator with liquid-crystal display (LCD). MOSFETs are the basis for pocket calculators and LCDs.]]

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  • Calculators – handheld calculator,{{cite web |title=13 Sextillion & Counting: The Long & Winding Road to the Most Frequently Manufactured Human Artifact in History |url=https://www.computerhistory.org/atchm/13-sextillion-counting-the-long-winding-road-to-the-most-frequently-manufactured-human-artifact-in-history/ |date=2 April 2018 |website=Computer History Museum |access-date=28 July 2019}} pocket calculator{{cite book|url=https://xdevs.com/doc/_Books/ASIC_Design/deep-submicron%20cmos%20ics.%20from%20basics%20to%20asics%20(veendrick-1998).pdf|title=Deep-Submicron CMOS ICs: From Basics to ASICs|last1=Veendrick|first1=Harry|date=2000|publisher=Kluwer Academic Publishers|isbn=9044001116|edition=2nd|pages=337–8|access-date=29 December 2019|archive-date=6 December 2020|archive-url=https://web.archive.org/web/20201206130923/https://xdevs.com/doc/_Books/ASIC_Design/deep-submicron%20cmos%20ics.%20from%20basics%20to%20asics%20(veendrick-1998).pdf|url-status=dead}}
  • Disk storage
  • Disk buffer cache – disk drives, optical disc drives (DVD and CD-ROM drives), optical disc players (CD and DVD players)
  • Hard drives – spindle speed control, disk buffer cache
  • Electric clocks – digital clocks
  • Watches – electronic wristwatch,{{cite journal|last1=Stephens|first1=Carlene|last2=Dennis|first2=Maggie|year=2000|title=Engineering Time: Inventing the Electronic Wristwatch|url=http://ieee-uffc.org/wp-content/uploads/2016/11/step.pdf#page=11|journal=The British Journal for the History of Science|publisher=Cambridge University Press|volume=33|issue=4|pages=477–497 (485)|doi=10.1017/S0007087400004167|issn=0007-0874|access-date=29 December 2019|archive-date=1 December 2017|archive-url=https://web.archive.org/web/20171201035923/http://ieee-uffc.org/wp-content/uploads/2016/11/step.pdf#page=11|url-status=dead}} quartz watch{{cite web|url=http://www.shmj.or.jp/english/pdf/ic/exhibi757E.pdf|title=Early 1970s: Evolution of CMOS LSI circuits for watches|website=Semiconductor History Museum of Japan|access-date=6 July 2019}} digital watch, digital wristwatch,
  • Electronic voting machine{{cite journal|last1=Mishra|first1=Vimal Kumar|last2=Yadava|first2=Narendra|last3=Nigam|first3=Kaushal|year=2018|title=Analysis of RSNM and WSNM of 6T SRAM Cell Using Ultra Thin Body FD-SOI MOSFET|url=https://books.google.com/books?id=jvh6DwAAQBAJ&pg=PA620|journal=Advances in Signal Processing and Communication: Select Proceedings of ICSC 2018|publisher=Springer|page=620|isbn=978-981-13-2553-3|display-editors=etal}}
  • Entertainment
  • Airsoft – airsoft gun{{cite web|url=https://www.majorairsoft.co.uk/guides/what-is-an-airsoft-mosfet/|title=What is an Airsoft Mosfet? An Airsof Mosfet Introduction|last1=Major|first1=Liam|date=1 December 2018|website=Major Airsoft|access-date=11 November 2019}}
  • Toys – electronic toys{{cite journal|date=29 September 1982|title=Amendment to Clarify Which Electronic Games Are Exempted From Commission Clarification|url=https://books.google.com/books?id=miriD2Kog6gC&pg=PA42747|journal=Federal Register|publisher=Office of the Federal Register, National Archives and Records Service, General Services Administration|volume=47|issue=189|pages=42,748–50}}
  • Gadgets{{cite book |last1=Sridharan |first1=K. |url=https://books.google.com/books?id=lJ-1BwAAQBAJ&pg=PA1 |title=Design of Arithmetic Circuits in Quantum Dot Cellular Automata Nanotechnology |last2=Pudi |first2=Vikramkumar |date=2015 |publisher=Springer |isbn=9783319166889 |page=1}} – electric meter reader, electronic key, electronic lock
  • Gate drivers – air conditioner, fan, sewing machine{{cite web |title=Infineon EiceDRIVER™ gate driver ICs |url=https://www.infineon.com/dgdl/Infineon-EiceDRIVER_Gate_Driver_ICs-ProductSelectionGuide-v01_01-EN.pdf?fileId=5546d46250cc1fdf015110069cb90f49 |website=Infineon |date=August 2019 |access-date=26 December 2019}}
  • Heating – electric heating,{{cite web |title=1–600 MHz – Broadcast and ISM |url=https://www.nxp.com/products/rf/rf-power/rf-ism-and-broadcast/1-600-mhz-broadcast-and-ism:RF-INDUST-1 |website=NXP Semiconductors |access-date=12 December 2019}} heating control system,{{cite book |last1=Paul |first1=D. J. |date=2003 |chapter=Nanoelectronics |editor-last1=Meyers |editor-first1=Robert Allen |title=Encyclopedia of Physical Science and Technology |publisher=Academic Press |isbn=978-0-12-227420-6 |url=https://books.google.com/books?id=T4xUAAAAMAAJ |edition=3rd |pages=285–301 (285–6) |doi=10.1016/B0-12-227410-5/00469-5 |quote=Many new technologies appeared during the 20th century. If one had to decide on which new technology had the largest impact on mankind, the microelectronics industry would certainly be one of the main contenders. Microelectronic components in the form of microprocessors and memory are used in computers, audiovisual components from hi-fis and videos to televisions, cars (the smallest Daimler-Benz car has over 60 microprocessors), communications systems including telephones and mobile phones, banking, credit cards, cookers, heating controllers, toasters, food processors – the list is almost endless. (...) The microelectronics industry has therefore become nanoelectronics named after the Greek for a dwarf "nanos." This article will review the silicon nanoelectronic field and discuss how far the silicon MOSFET can be scaled down.}} RF heating
  • Home appliances
  • Kitchen appliances – cooker, food processor, toaster, blender
  • RF energy appliances – cooking appliances,{{cite web |title=RF Defrosting |url=https://www.nxp.com/products/rf/rf-power/rf-defrosting:RF-DEFROSTING-HOME-PG |website=NXP Semiconductors |access-date=12 December 2019}} defrosting, freezer, oven, refrigerator, microwave cooking
  • Lighting – dimmable light switch, fluorescent lamp, electrical ballast,{{Cite book |last1=Veendrick |first1=Harry |title=Deep-Submicron CMOS ICs: From Basics to ASICs |date=2000 |publisher=Kluwer Academic Publishers |isbn=9044001116 |page=220 |edition=2nd |url=https://xdevs.com/doc/_Books/ASIC_Design/deep-submicron%20cmos%20ics.%20from%20basics%20to%20asics%20(veendrick-1998).pdf |access-date=29 December 2019 |archive-date=6 December 2020 |archive-url=https://web.archive.org/web/20201206130923/https://xdevs.com/doc/_Books/ASIC_Design/deep-submicron%20cmos%20ics.%20from%20basics%20to%20asics%20(veendrick-1998).pdf |url-status=dead }} light dimmer
  • Smart lighting – wireless light switch{{cite journal |last1=Theeuwen |first1=S. J. C. H. |last2=Qureshi |first2=J. H. |title=LDMOS Technology for RF Power Amplifiers |journal=IEEE Transactions on Microwave Theory and Techniques |date=June 2012 |volume=60 |issue=6 |pages=1755–1763 |doi=10.1109/TMTT.2012.2193141 |bibcode=2012ITMTT..60.1755T |s2cid=7695809 |url=https://www.ampleon.com/documents/published-paper/AMP-PP-2017-0503.pdf |issn=1557-9670}}
  • Light-emitting diode (LED) technology – dimmable LED driver circuits (such as for LED lamps and LED flashlights){{cite book|url=https://books.google.com/books?id=Pvnu8bMZuVMC&pg=PA20|title=Power Supplies for LED Driving|last1=Winder|first1=Steve|date=2011|publisher=Newnes|isbn=9780080558578|pages=20–22, 39–41}}
  • Payment card technology – credit card, smart card
  • Card readers – embossed credit card reader,{{cite book|url=https://books.google.com/books?id=KPC7AAAAIAAJ|title=Business Automation|date=1972|publisher=Hitchcock Publishing Company|page=28|quote=In addition, electro-optical technology and MOS/LSI electronics combine to provide a highly accurate embossed credit card reader which can be part of a POS terminal or standalone unit. It detects embossed numbers for direct checking with a central computer to verify a customer's credit and initiate the purchasing transaction. Also, the same electronics can be used to read data contained on magnetic tape and other types of credit card}}{{cite book|url=https://books.google.com/books?id=ixDjBQAAQBAJ&pg=PA331|title=Data Structures, Computer Graphics, Pattern Recognition|last1=Klinger|first1=A.|last2=Fu|first2=K. S.|last3=Kunii|first3=T. L.|date=2014|publisher=Academic Press|isbn=9781483267258|page=331}} magnetic stripe card reader
  • Portable electronics
  • RF energy technology{{cite web |title=915 MHz RF Cooking |url=https://www.nxp.com/products/rf/rf-power/rf-cooking/915-mhz-rf-cooking:RF-COOKING-1 |website=NXP Semiconductors |access-date=7 December 2019}}{{cite web |last1=Torres |first1=Victor |title=Why LDMOS is the best technology for RF energy |url=https://www.mwee.com/design-center/why-ldmos-best-technology-rf-energy |website=Microwave Engineering Europe |publisher=Ampleon |access-date=10 December 2019 |date=21 June 2018 |archive-date=10 December 2019 |archive-url=https://web.archive.org/web/20191210005441/https://www.mwee.com/design-center/why-ldmos-best-technology-rf-energy |url-status=dead }} – smart appliances
  • Smart devices – smartwatch

}}

=Pocket calculators=

One of the earliest influential consumer electronic products enabled by MOS LSI circuits was the electronic pocket calculator, as MOS LSI technology enabled large amounts of computational capability in small packages. In 1965, the Victor 3900 desktop calculator was the first MOS LSI calculator, with 29 MOS LSI chips.{{Cite web |author=Nigel Tout |url=http://www.vintagecalculators.com/html/sharp_qt-8d.html |title=Sharp QT-8D "micro Compet" |work=Vintage Calculators Web Museum |access-date=29 September 2010}} In 1967 the Texas Instruments Cal-Tech was the first prototype electronic handheld calculator, with three MOS LSI chips, and it was later released as the Canon Pocketronic in 1970.{{cite web |title=Hand-held Calculators |url=http://www.vintagecalculators.com/html/hand-held_calculators.html |website=Vintage Calculators Web Museum |access-date=22 July 2019}} The Sharp QT-8D desktop calculator was the first mass-produced LSI MOS calculator in 1969, and the Sharp EL-8 which used four MOS LSI chips was the first commercial electronic handheld calculator in 1970. The first true electronic pocket calculator was the Busicom LE-120A HANDY LE, which used a single MOS LSI calculator-on-a-chip from Mostek, and was released in 1971. By 1972, MOS LSI circuits were commercialized for numerous other applications.

=Audio-visual (AV) media=

File:Home cinema 01.jpg home cinema setup, with full HD LCD television, digital TV set-top box, DVD player, PlayStation 3 video game console, and loudspeakers. MOSFETs are used in all of these consumer electronic devices.]]

MOSFETs are commonly used for a wide range of audio-visual (AV) media technologies, which include the following list of applications.

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=Power MOSFET applications=

Power MOSFETs are commonly used for a wide range of consumer electronics.{{cite web |title=MOSFET |url=https://www.infineon.com/cms/en/product/power/mosfet/ |website=Infineon Technologies |access-date=24 December 2019}} Power MOSFETs are widely used in the following consumer applications.

File:Switched mode power adapter.jpg, a type of switched-mode power supply (SMPS) AC adapter. Power MOSFETs are widely used in most SMPS power supplies and mobile device AC adapters.]]

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}}

Information and communications technology (ICT)

MOSFETs are fundamental to information and communications technology (ICT),{{cite web |date=10 June 2019 |title=Remarks by Director Iancu at the 2019 International Intellectual Property Conference |url=https://www.uspto.gov/about-us/news-updates/remarks-director-iancu-2019-international-intellectual-property-conference |url-status=dead |archive-url=https://web.archive.org/web/20191217200937/https://www.uspto.gov/about-us/news-updates/remarks-director-iancu-2019-international-intellectual-property-conference |archive-date=17 December 2019 |access-date=20 July 2019 |website=United States Patent and Trademark Office}}{{cite web |title=Advanced information on the Nobel Prize in Physics 2000 |url=https://www.nobelprize.org/uploads/2018/06/advanced-physicsprize2000.pdf |website=Nobel Prize |date=June 2018 |access-date=17 August 2019}} including modern computers,{{cite book |last1=Omura |first1=Yasuhisa |last2=Mallik |first2=Abhijit |last3=Matsuo |first3=Naoto |title=MOS Devices for Low-Voltage and Low-Energy Applications |date=2017 |publisher=John Wiley & Sons |isbn=9781119107354 |page=53 |url=https://books.google.com/books?id=yOjFDQAAQBAJ&pg=PA53}}{{cite book|url=https://books.google.com/books?id=ZiZTAAAAMAAJ|title=Power MOSFETS: theory and applications|last1=Grant|first1=Duncan Andrew|last2=Gowar|first2=John|date=1989|publisher=Wiley|isbn=9780471828679|page=1|quote=The metal–oxide–semiconductor field-effect transistor (MOSFET) is the most commonly used active device in the very-large-scale integration of digital integrated circuits (VLSI). During the 1970s these components revolutionized electronic signal processing, control systems and computers.}} modern computing,{{cite book|title=The Electronics Handbook|last1=Chen|first1=Tom|date=1996|publisher=CRC Press|isbn=978-0-8493-8345-8|editor-last1=Whitaker|editor-first1=Jerry C.|page=644|chapter=Integrated Circuits|chapter-url=https://books.google.com/books?id=DSHSqWQXm3oC&pg=PA644}} telecommunications, the communications infrastructure,{{cite book |last1=Whiteley |first1=Carol |last2=McLaughlin |first2=John Robert |title=Technology, Entrepreneurs, and Silicon Valley |date=2002 |publisher=Institute for the History of Technology |isbn=9780964921719 |url=https://books.google.com/books?id=x9koAQAAIAAJ |quote=These active electronic components, or power semiconductor products, from Siliconix are used to switch and convert power in a wide range of systems, from portable information appliances to the communications infrastructure that enables the Internet. The company's power MOSFETs – tiny solid-state switches, or metal oxide semiconductor field-effect transistors – and power integrated circuits are widely used in cell phones and notebook computers to manage battery power efficiently}} the Internet,{{cite book |last1=Baker |first1=R. Jacob |url=https://books.google.com/books?id=kxYhNrOKuJQC&pg=PA7 |title=CMOS: Circuit Design, Layout, and Simulation |date=2011 |publisher=John Wiley & Sons |isbn=978-1118038239 |page=7}}{{cite journal |last1=Green |first1=M. M. |title=An overview on wireline communication systems for high-speed broadband communication |journal=Proceedings of Papers 5th European Conference on Circuits and Systems for Communications (ECCSC'10) |date=November 2010 |pages=1–8 |url=https://ieeexplore.ieee.org/document/5733843}} digital telephony, wireless telecommunications,{{cite book |last1=Asif |first1=Saad |title=5G Mobile Communications: Concepts and Technologies |date=2018 |publisher=CRC Press |isbn=9780429881343 |pages=128–134 |url=https://books.google.com/books?id=yg1mDwAAQBAJ&pg=PT128}} and mobile networks. According to Colinge, the modern computer industry and digital telecommunication systems would not exist without the MOSFET. Advances in MOS technology has been the most important contributing factor in the rapid rise of network bandwidth in telecommunication networks, with bandwidth doubling every 18 months, from bits per second to terabits per second (Edholm's law).{{cite book |last1=Jindal |first1=R. P. |title=2009 2nd International Workshop on Electron Devices and Semiconductor Technology |chapter=From millibits to terabits per second and beyond - over 60 years of innovation |year=2009 |pages=1–6 |doi=10.1109/EDST.2009.5166093 |chapter-url=https://events.vtools.ieee.org/m/195547|isbn=978-1-4244-3831-0 |s2cid=25112828 }}

= Computers =

MOSFETs are commonly used in a wide range of computers and computing applications, which include the following.

{{columns-list|colwidth=50em|

  • Business machines
  • Computer industry{{cite book|title=Handbook of Nanophysics: Nanoelectronics and Nanophotonics|last1=Colinge|first1=Jean-Pierre|last2=Greer|first2=Jim|date=2010|publisher=CRC Press|isbn=9781420075519|pages=12{{hyphen}}1|chapter=Chapter 12: Transistor Structures for Nanoelectronics|chapter-url=https://books.google.com/books?id=a3kJAMALo0MC&pg=SA12-PA1}} – PC market
  • Computer graphics{{cite book|url=https://books.google.com/books?id=I6mgBwAAQBAJ&pg=PA96|title=Computer Graphics: Techniques and Applications|last1=Parslow|first1=R.|date=2013|publisher=Springer Science & Business Media|isbn=9781475713206|page=96}} – graphics card{{cite book|url=https://books.google.com/books?id=Lv_EDgAAQBAJ&pg=PA264|title=Nanometer CMOS ICs: From Basics to ASICs|last1=Veendrick|first1=Harry J. M.|date=2017|publisher=Springer|isbn=9783319475974|edition=2nd|page=264}}
  • Video memory – character generator, framebuffer,{{cite web|url=http://accad.osu.edu/~waynec/history/PDFs/Annals_final.pdf|title=SuperPaint: An Early Frame Buffer Graphics System|author=Richard Shoup|year=2001|work=Annals of the History of Computing|publisher=IEEE|url-status=dead|archive-url=https://web.archive.org/web/20040612215245/http://accad.osu.edu/~waynec/history/PDFs/Annals_final.pdf|archive-date=12 June 2004}}{{cite conference|last1=Goldwasser|first1=S.M.|date=June 1983|title=Computer Architecture For Interactive Display Of Segmented Imagery|url=https://books.google.com/books?id=8MuoCAAAQBAJ&pg=PA81|conference=Computer Architectures for Spatially Distributed Data|publisher=Springer Science & Business Media|pages=75–94 (81)|isbn=9783642821509}} video RAM (VRAM),{{cite web|url=https://www.computer.org/publications/tech-news/chasing-pixels/Famous-Graphics-Chips-IBMs-professional-graphics-the-PGC-and-8514A/Famous-Graphics-Chips-TI-TMS34010-and-VRAM|title=Famous Graphics Chips: TI TMS34010 and VRAM|last=Peddie|first=Jon|website=IEEE Computer Society|publisher=Institute of Electrical and Electronics Engineers|access-date=1 November 2019}} synchronous graphics RAM (SGRAM), GDDR SDRAM
  • Computer hardware – computer processor, computer memory, computer data storage, computer power supply,{{cite book|url=https://books.google.com/books?id=11EvBQAAQBAJ&pg=PA332|title=Principles of Transistor Circuits: Introduction to the Design of Amplifiers, Receivers and Digital Circuits|last1=Amos|first1=S. W.|last2=James|first2=Mike|date=2013|publisher=Elsevier|isbn=9781483293905|page=332}} instrument control, motherboard, voltage regulator module (VRM), overclocking{{cite web|url=https://www.tomshardware.com/uk/reviews/mosfet-defintion-transistor-pc-motherboard-psu-explained,6343.html|title=What Is a MOSFET? A Basic Definition|last1=Harding|first1=Scharon|date=17 September 2019|website=Tom's Hardware|access-date=7 November 2019}}
  • Controllers – display controller, peripheral controller, tape drive control,{{cite book|url=https://books.google.com/books?id=6u16DAAAQBAJ&pg=PA132|title=Introduction to the History of Computing: A Computing History Primer|last1=O'Regan|first1=Gerard|date=2016|publisher=Springer|isbn=9783319331386|page=132}} ATA controller, keyboard controller{{cite web|url=http://www.cpushack.com/Historyofthe8051.html|title=The Unofficial History of 8051|last1=Waclawek|first1=Jan|year=2006|website=The CPU Shack Museum|access-date=15 November 2019|editor-last1=Culver|editor-first1=John}}
  • Peripherals – display monitor, computer keyboard, optical mouse
  • Computer printers – laser printer
  • Digital computers {{ndash}} computer terminals,{{cite thesis|last1=Cherry|first1=Robert William|date=June 1973|title=A calculator option for the Tektronix 4010 computer graphics terminal|url=https://calhoun.nps.edu/handle/10945/16514|journal=Compilation of Abstracts of Dissertations, Theses and Research Papers Submitted by Candidates for Degrees|publisher=Naval Postgraduate School|type=Thesis }}{{cite book|url=https://books.google.com/books?id=HikuAAAAMAAJ&pg=PA23|title=Electronic Components|date=1974|publisher=U.S. Government Printing Office|page=23}} cloud computing, mainframes, multimedia computers, supercomputers, server computers, workstations
  • Personal computer (PC){{Cite book|url=https://archive.org/details/Jacek_Korec_Low_Voltage_Power_MOSFETs/page/n17|title=Low Voltage Power MOSFETs: Design, Performance and Applications|last1=Korec|first1=Jacek|date=2011|publisher=Springer Science+Business Media|isbn=978-1-4419-9320-5|pages=9–14}} – desktop computer, notebook computer
  • Computer science{{cite book|url=http://fennetic.net/irc/Christopher%20R.%20Carroll%20Carver%20Mead%20Mohammed%20Ismail%20Analog%20VLSI%20Implementation%20of%20Neural%20Systems.pdf|title=Analog VLSI Implementation of Neural Systems|date=8 May 1989|publisher=Kluwer Academic Publishers|isbn=978-1-4613-1639-8|editor-last1=Mead|editor-first1=Carver A.|series=The Kluwer International Series in Engineering and Computer Science|volume=80|location=Norwell, MA|doi=10.1007/978-1-4613-1639-8|editor-last2=Ismail|editor-first2=Mohammed }}
  • Artificial intelligence (AI) – neural network, artificial neural network (ANN), neural processing unit,{{cite book |last1=Holler |first1=M. |last2=Tam |first2=S. |last3=Castro |first3=H. |last4=Benson |first4=R. |title=International Joint Conference on Neural Networks |chapter=An electrically trainable artificial neural network (ETANN) with 10240 'floating gate' synapses |location=Washington, D.C. |year=1989 |volume=2 |pages=191–196 |doi=10.1109/IJCNN.1989.118698|s2cid=17020463 }} feedback and feedforward neural networks, maze solving algorithm
  • Computer vision – optical character recognition (OCR), augmented reality (AR),{{cite book |last1=Schmalstieg |first1=Dieter |last2=Hollerer |first2=Tobias |title=Augmented Reality: Principles and Practice |date=2016 |publisher=Addison-Wesley Professional |isbn=978-0-13-315320-0 |pages=209–10 |url=https://books.google.com/books?id=qPU2DAAAQBAJ&pg=PT209}} computer stereo vision, virtual reality (VR){{cite book |last1=Westwood |first1=James D. |title=Medicine Meets Virtual Reality 19: NextMed |date=2012 |publisher=IOS Press |isbn=978-1-61499-021-5 |page=93 |url=https://books.google.com/books?id=JYk1nUgIMlEC&pg=PA93}}
  • Data centers
  • Information technology (IT)
  • Mobile devices – mobile computers,{{cite book|url=https://books.google.com/books?id=Ue7ADyHmLrYC&pg=PA33|title=POWER/HVMOS Devices Compact Modeling|last1=Grabinski|first1=Wladyslaw|last2=Gneiting|first2=Thomas|date=2010|publisher=Springer Science & Business Media|isbn=9789048130467|pages=33–4}} handheld PC,{{cite book|url=https://books.google.com/books?id=E3eSvSu2S6IC&pg=PA305|title=Proceedings of the Ninth International Symposium on Silicon-on-Insulator Technology and Devices|date=1999|publisher=The Electrochemical Society|isbn=9781566772259|page=305}} personal digital assistant (PDA)
  • Smart devices{{cite book|url=https://books.google.com/books?id=0feEDwAAQBAJ|title=Junctionless Field-Effect Transistors: Design, Modeling, Simulation|last1=Sahay|first1=Shubham|last2=Kumar|first2=Mamidala Jagadesh|date=2019|publisher=John Wiley & Sons|isbn=9781119523536}} – laptop,{{cite book|url=https://books.google.com/books?id=FSpC6yNyNWcC&pg=PA280|title=Power Electronics: Principles and Applications|last1=Jacob|first1=J.|date=2001|publisher=Cengage Learning|isbn=9780766823327|page=280}} portable computer,{{cite book |last1=Forester |first1=Tom |title=High-tech Society: The Story of the Information Technology Revolution |date=1987 |publisher=MIT Press |isbn=978-0-262-56044-3 |page=144 |url=https://books.google.com/books?id=Gqgb946KPfQC&pg=PA143}} tablet computer
  • Parallel computing – fine-grained parallelism
  • Word processors

}}

=Telecommunications=

{{See|RF CMOS#Applications}}

File:IPhone 1st Gen.svg iPhone smartphone (2007). MOSFETs are the basis for smartphones, each typically containing billions of MOSFETs.]]

MOSFETs are commonly used in a wide range of telecommunications, which include the following applications.

{{columns-list|colwidth=50em|

  • Communication systems – broadband, data transmission, digital telecommunication, digital loop carriers, fibre-optic communication, packet switching,{{cite book|url=https://books.google.com/books?id=Tokk5bZxB0MC&pg=SA34-PA4|title=The Communications Handbook|last1=Gibson|first1=Jerry D.|date=2018|publisher=CRC Press|isbn=9781420041163|pages=34{{hyphen}}4}}{{cite journal|last1=Hayward|first1=G.|last2=Gottlieb|first2=A.|last3=Jain|first3=S.|last4=Mahoney|first4=D.|date=October 1987|title=CMOS VLSI Applications in Broadband Circuit Switching|journal=IEEE Journal on Selected Areas in Communications|volume=5|issue=8|pages=1231–1241|doi=10.1109/JSAC.1987.1146652|issn=1558-0008}}{{cite journal|last1=Hui|first1=J.|last2=Arthurs|first2=E.|date=October 1987|title=A Broadband Packet Switch for Integrated Transport|journal=IEEE Journal on Selected Areas in Communications|volume=5|issue=8|pages=1264–1273|doi=10.1109/JSAC.1987.1146650|issn=1558-0008}} telecommunication circuits
  • Mobile devices – mobile communication,{{cite news|url=https://www.eetasia.com/news/article/18112004-infineon-hits-bulk-cmos-rf-switch-milestone|title=Infineon Hits Bulk-CMOS RF Switch Milestone|date=20 November 2018|work=EE Times|access-date=26 October 2019}} pager
  • Cellular networks – cellular voice and data traffic,{{cite web |title=LDMOS Products and Solutions |url=https://www.nxp.com/products/rf/rf-power/ldmos-products-and-solutions:RF-LDMOS-Products-Sol |website=NXP Semiconductors |access-date=4 December 2019}} digital networks, GSM, 2G, 3G,{{cite book|url=https://books.google.com/books?id=StJpDQAAQBAJ|title=Silicon RF Power MOSFETS|last1=Baliga|first1=B. Jayant|date=2005|publisher=World Scientific|isbn=9789812561213|author1-link=B. Jayant Baliga}} 4G, 5G{{Cite news |title=MDmesh: 20 Years of Superjunction STPOWER™ MOSFETs, A Story About Innovation |url=https://blog.st.com/mdmesh-anniversary/ |access-date=2 November 2019 |work=STMicroelectronics |date=11 September 2019}}
  • Mobile phones
  • Smartphones – application processor, flash memory, cellular modem, RF transceiver, CMOS image sensor, power management IC, display driver, wireless communication, sound chip, gyroscope, touchscreen controller{{cite book |last1=Kim |first1=Woonyun |chapter=CMOS power amplifier design for cellular applications: an EDGE/GSM dual-mode quad-band PA in 0.18 μm CMOS |editor-last1=Wang |editor-first1=Hua |editor-last2=Sengupta |editor-first2=Kaushik |title=RF and mm-Wave Power Generation in Silicon |date=2015 |publisher=Academic Press |isbn=978-0-12-409522-9 |pages=89–90 |chapter-url=https://books.google.com/books?id=PzzLAwAAQBAJ&pg=PA89}}
  • Quantum communication – quantum teleportation, quantum information processing{{cite news |title=First chip-to-chip quantum teleportation harnessing silicon photonic chip fabrication |url=https://www.bristol.ac.uk/news/2019/december/quantum-teleportation.html |access-date=28 January 2020 |publisher=University of Bristol |date=23 December 2019}}
  • Telecommunications equipment{{cite journal|last1=Zeidler|first1=G.|last2=Becker|first2=D.|year=1974|title=MOS LSI Custom Circuits Offer New Prospects for Communications Equipment Design|url=https://books.google.com/books?id=TihQAAAAYAAJ|journal=Electrical Communication|publisher=Western Electric Company|volume=49–50|pages=88–92|quote=In many fields of communications equipment design, MOS LSI custom built circuits provide the only practical and economic solution. Important examples include the coin telephone NT 2000, the QUICKSTEP*push button set, a push button signal receiver. (...) A complete list of all applications is beyond the scope of this paper since new MOS developments are constantly being initiated in the various technical areas. Typical examples of completed and present MOS developments are:
    — crosspoints
    — multiplexers
    — modems
    — mobile radios
    — push button signal receivers
    — mail sorting machines
    — multimeters
    — telephone sets
    — coin telephones
    — teleprinters
    — screen displays
    — television receivers.}}     – fax, modem,{{cite journal|date=29 November 1972|title=Milgo Modems Out |journal=Computerworld|url=https://books.google.com/books?id=XFwBCNwWK8MC&pg=PA34|publisher=IDG Enterprise|volume=6|issue=48|page=34|issn=0010-4841}} crosspoint switch, mail sorter machine, multimeter, multiplexer, push-button signal receiver, optical fiber circuits, personal communications device
  • Telecommunication networks
  • Internet – Internet infrastructure, the Web, broadband Internet,{{cite book|title=CMOS Telecom Data Converters|last1=Geerts|first1=Yves|last2=Steyaert|first2=Michiel|last3=Sansen|first3=Willy|publisher=Springer Science & Business Media|year=2013|isbn=978-1-4757-3724-0|editor-last1=Rodríguez-Vázquez|editor-first1=Angel|page=277|chapter=Chapter 8: Single-Loop Multi-Bit Sigma-Delta Modulators|orig-year=1st pub. 2004|editor-last2=Medeiro|editor-first2=Fernando|editor-last3=Janssens|editor-first3=Edmond|chapter-url=https://books.google.com/books?id=SF3hBwAAQBAJ&pg=PA277}} Internet of things,{{cite book|url=https://books.google.com/books?id=yOjFDQAAQBAJ&pg=PA3|title=MOS Devices for Low-Voltage and Low-Energy Applications|last1=Omura|first1=Yasuhisa|last2=Mallik|first2=Abhijit|last3=Matsuo|first3=Naoto|date=2017|publisher=John Wiley & Sons|isbn=9781119107354|pages=3–4}} online communication, online service, search engine, social media, social communications infrastructure
  • Telephone networks – public switched telephone network (PSTN), electronic switching system,{{cite book|title=The Communications Handbook|last1=Floyd|first1=Michael D.|last2=Hillman|first2=Garth D.|date=8 October 2018|publisher=CRC Press|edition=2nd|pages=26–1, 26–2, 26–3|chapter=Pulse-Code Modulation Codec-Filters|isbn=9781420041163|orig-year=1st pub. 2000|chapter-url=https://books.google.com/books?id=Tokk5bZxB0MC&pg=SA26-PA1}} telephone exchange,{{cite journal|last1=Debenham|first1=M. J.|date=October 1974|title=MOS in Telecommunications|url=https://books.google.com/books?id=s72-zb_GBd4C&pg=RA1-PA113|journal=Microelectronics Reliability|volume=13|issue=5|pages=417|doi=10.1016/0026-2714(74)90466-1|bibcode=1974MiRe...13..417D |issn=0026-2714|url-access=subscription}} private branch exchange, key telephone system, telephone loop extender, Digital switching network, Integrated Services Digital Network (ISDN)
  • Telephony – telephone switching,{{cite book|url=https://books.google.com/books?id=07NmhqkOqwsC|title=100 Years of Telephone Switching|last1=Chapuis|first1=Robert J.|last2=Joel|first2=Amos E.|date=2003|publisher=IOS Press|isbn=9781586033729|pages=21, 135, 141–6, 214}} digital telephony, voice mail, digital tapeless answering machine, pair gain multiplexer
  • Telephones{{cite journal|date=August 1970|title=Push-button telephone chips|url=https://www.americanradiohistory.com/hd2/IDX-Site-Early-Radio/Archive-Wireless-World-IDX/70s/Wireless-World-1970-08-OCR-Page-0023.pdf|journal=Wireless World|page=383}} – push-button telephone, digital telephone, speed dial,{{cite journal|last1=Valéry|first1=Nicholas|date=11 April 1974|title=Debut for the telephone on a chip|url=https://books.google.com/books?id=u0O-g0_fbrIC&pg=PA65|journal=New Scientist|volume=62|issue=893|pages=65–7|issn=0262-4079}} touch-tone phone,{{cite journal|last1=Gust|first1=Victor|last2=Huizinga|first2=Donald|last3=Paas|first3=Terrance|date=January 1976|title=Call anywhere at the touch of a button|url=http://doc.telephonecollectors.info/dm/76Jan_BLR_P3_Touch_A_Matic.pdf#page=2|journal=Bell Laboratories Record|volume=54|pages=3–8}}{{Dead link|date=July 2023 |bot=InternetArchiveBot |fix-attempted=yes }} payphone, cordless telephone, cell phone, digital phone, digital telephone, camera phone, videophone
  • Teleprinters
  • Wireless technology – wireless networks,{{cite book|url=https://books.google.com/books?id=fkO9BAAAQBAJ&pg=PA1|title=MOSFET Technologies for Double-Pole Four-Throw Radio-Frequency Switch|last1=Srivastava|first1=Viranjay M.|last2=Singh|first2=Ghanshyam|date=2013|publisher=Springer Science & Business Media|isbn=9783319011653|page=1}} wireless communication, base stations, routers, transceivers, baseband processors,{{cite book|url=https://books.google.com/books?id=rMsqBgAAQBAJ&pg=SA60-PA2|title=The VLSI Handbook|last1=Chen|first1=Wai-Kai|date=2018|publisher=CRC Press|isbn=9781420005967|pages=60{{hyphen}}2}}{{cite book|url=https://books.google.com/books?id=Alv6nWVCkDIC&pg=PA1|title=Nanometer CMOS Sigma-Delta Modulators for Software Defined Radio|last1=Morgado|first1=Alonso|last2=Río|first2=Rocío del|last3=Rosa|first3=José M. de la|date=2011|publisher=Springer Science & Business Media|isbn=9781461400370|page=1}} end-user terminals,{{cite book|last1=Daneshrad|first1=Babal|last2=Eltawil|first2=Ahmed M.|title=Wireless Multimedia Network Technologies |chapter=Integrated Circuit Technologies for Wireless Communications |year=2002|series=The International Series in Engineering and Computer Science|publisher=Springer US|volume=524|pages=227–244|doi=10.1007/0-306-47330-5_13|isbn=0-7923-8633-7}} ALOHAnet, Bluetooth, Wi-Fi, satellite communication, GPS, GPS receiver, near-field communication, DECT,{{cite web|url=http://www.ewh.ieee.org/r6/scv/ssc/May2008_WLAN.pdf|title=20.2: A Dual-band CMOS MIMO Radio SoC for IEEE 802.11n Wireless LAN|last1=Nathawad|first1=L.|last2=Zargari|first2=M.|website=IEEE Entity Web Hosting|publisher=IEEE|access-date=22 October 2016|last3=Samavati|first3=H.|last4=Mehta|first4=S.|last5=Kheirkhaki|first5=A.|last6=Chen|first6=P.|last7=Gong|first7=K.|last8=Vakili-Amini|first8=B.|last9=Hwang|first9=J.|last18=Baytekin|last11=Terrovitis|first11=M.|last12=Kaczynski|first12=B.|first13=S.|last15=Gan|first14=M.|first15=H.|last10=Chen|last16=Lee|last17=Abdollahi-Alibeik|first17=B.|first10=M.|last21=Chang|last13=Limotyrakis|first18=B.|first16=M.|first19=K.|last19=Onodera|last24=Wooley|first23=D.|last23=Su|first22=S.|last22=Jen|first24=B.|first20=S.|last20=Mendis|first21=A.|last14=Mack|archive-date=23 October 2016|archive-url=https://web.archive.org/web/20161023053607/http://www.ewh.ieee.org/r6/scv/ssc/May2008_WLAN.pdf|url-status=dead}} WLAN{{cite journal|date=Spring 2008|title=Abidi Receives IEEE Pederson Award at ISSCC 2008|url=https://pdfs.semanticscholar.org/5d0a/e04007ed1d4ee61af3494aa0126f0ae5dcaa.pdf|archive-url=https://web.archive.org/web/20191107054057/https://pdfs.semanticscholar.org/5d0a/e04007ed1d4ee61af3494aa0126f0ae5dcaa.pdf|url-status=dead|archive-date=2019-11-07|journal=SSCC: IEEE Solid-State Circuits Society News|volume=13|issue=2|page=12|doi=10.1109/N-SSC.2008.4785734|last1=Olstein|first1=Katherine|s2cid=30558989}}
  • Radio technology – radio-frequency (RF) technology, RF engineering, RF power amplifier, radio-frequency communication, radio network, FM radio, mobile radio, radio transceiver, RF CMOS, RF switch, millimetre wave,{{cite book|url=https://books.google.com/books?id=71dHe1yb9jgC|title=High-Frequency Integrated Circuits|last1=Voinigescu|first1=Sorin|date=2013|publisher=Cambridge University Press|isbn=9780521873024}} digital radio, packet radio,{{cite conference|last1=Fralick|first1=Stanley C.|last2=Brandin|first2=David H.|last3=Kuo|first3=Franklin F.|last4=Harrison|first4=Christopher|title=Proceedings of the May 19-22, 1975, national computer conference and exposition on - AFIPS '75 |date= 19–22 May 1975|chapter=Digital Terminals For Packet Broadcasting|page=253 |chapter-url=https://apps.dtic.mil/dtic/tr/fulltext/u2/a122774.pdf|archive-url=https://web.archive.org/web/20191116151405/https://apps.dtic.mil/dtic/tr/fulltext/u2/a122774.pdf|url-status=live|archive-date=16 November 2019|conference=AFIPS '75|publisher=American Federation of Information Processing Societies|doi=10.1145/1499949.1499990}} software-defined radio (SDR), car radio, radio-frequency identification, radio-controlled model
  • Radar{{cite book|url=https://books.google.com/books?id=Lv_EDgAAQBAJ&pg=PA243|title=Nanometer CMOS ICs: From Basics to ASICs|last1=Veendrick|first1=Harry J. M.|date=2017|publisher=Springer|isbn=9783319475974|edition=2nd|page=243}}

}}

=Power MOSFET applications=

{{See|LDMOS#Applications}}

{{Columns-list|colwidth=50em|

}}

Insulated-gate bipolar transistor (IGBT)

{{See also|Insulated-gate bipolar transistor}}

The insulated-gate bipolar transistor (IGBT) is a power transistor with characteristics of both a MOSFET and bipolar junction transistor (BJT).{{cite web |title=IGBT Definition |url=https://www.pcmag.com/encyclopedia/term/59900/igbt |work=PC Magazine|access-date=17 August 2019}} {{As of|2010}}, the IGBT is the second most widely used power transistor, after the power MOSFET. The IGBT accounts for 27% of the power transistor market, second only to the power MOSFET (53%), and ahead of the RF amplifier (11%) and bipolar junction transistor (9%).{{cite news |title=Power Transistor Market Will Cross $13.0 Billion in 2011 |url=http://www.icinsights.com/news/bulletins/Power-Transistor-Market-Will-Cross-130-Billion-In-2011/ |access-date=15 October 2019 |work=IC Insights |date=21 June 2011}} The IGBT is widely used in consumer electronics, industrial technology, the energy sector, aerospace electronic devices, and transportation.

The IGBT is widely used in the following applications.

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Quantum physics

= 2D electron gas and quantum Hall effect =

{{Main|Two-dimensional electron gas|Quantum Hall effect}}

Image:FET cross section.png (2DEG) is present when a MOSFET is in inversion mode, and is found directly beneath the gate oxide.]]

In quantum physics and quantum mechanics, the MOSFET is the basis for two-dimensional electron gas (2DEG) and the quantum Hall effect. The MOSFET enables physicists to study electron behavior in a two-dimensional gas, called a two-dimensional electron gas. In a MOSFET, conduction electrons travel in a thin surface layer, and a "gate" voltage controls the number of charge carriers in this layer. This allows researchers to explore quantum effects by operating high-purity MOSFETs at liquid helium temperatures.{{cite journal |last1=Lindley |first1=David |title=Focus: Landmarks—Accidental Discovery Leads to Calibration Standard |journal=Physics |date=15 May 2015 |volume=8 |page=46 |doi=10.1103/Physics.8.46 }}

In 1978, the Gakushuin University researchers Jun-ichi Wakabayashi and Shinji Kawaji observed the Hall effect in experiments carried out on the inversion layer of MOSFETs.{{cite journal |author1=Jun-ichi Wakabayashi |author2=Shinji Kawaji |year=1978 |title=Hall effect in silicon MOS inversion layers under strong magnetic fields |journal=J. Phys. Soc. Jpn. |volume=44 |issue=6 |page=1839 |doi=10.1143/JPSJ.44.1839|bibcode=1978JPSJ...44.1839W}} In 1980, Klaus von Klitzing, working at the high magnetic field laboratory in Grenoble with silicon-based MOSFET samples developed by Michael Pepper and Gerhard Dorda, made the unexpected discovery of the quantum Hall effect.{{cite journal |author1=K. v. Klitzing |author2=G. Dorda |author3=M. Pepper |year=1980 |title=New method for high-accuracy determination of the fine-structure constant based on quantized Hall resistance |journal=Phys. Rev. Lett. |volume=45 |issue=6 |pages=494–497 |bibcode=1980PhRvL..45..494K |doi=10.1103/PhysRevLett.45.494|doi-access=free }}

= Quantum technology =

{{See|QFET}}

The MOSFET is used in quantum technology.{{cite book|url=https://archive.org/details/microcosm00geor|url-access=registration|title=Microcosm: The Quantum Revolution In Economics And Technology|last1=Gilder|first1=George|date=1990|publisher=Simon and Schuster|isbn=9780671705923|pages=[https://archive.org/details/microcosm00geor/page/n89 86]-9, 95, 145-8, 300}} A quantum field-effect transistor (QFET) or quantum well field-effect transistor (QWFET) is a type of MOSFET{{cite journal |last1=Datta |first1=Kanak |last2=Khosru |first2=Quazi D. M. |title=III–V tri-gate quantum well MOSFET: Quantum ballistic simulation study for 10nm technology and beyond |journal=Solid-State Electronics |date=1 April 2016 |volume=118 |pages=66–77 |doi=10.1016/j.sse.2015.11.034 |arxiv=1802.09136 |bibcode=2016SSEle.118...66D |s2cid=101934219 |issn=0038-1101}}{{cite book |last1=Kulkarni |first1=Jaydeep P. |last2=Roy |first2=Kaushik |chapter=Technology/Circuit Co-Design for III-V FETs |editor-last1=Oktyabrsky |editor-first1=Serge |editor-last2=Ye |editor-first2=Peide |title=Fundamentals of III-V Semiconductor MOSFETs |date=2010 |publisher=Springer Science & Business Media |isbn=978-1-4419-1547-4 |doi=10.1007/978-1-4419-1547-4_14|pages=423–442 |chapter-url=https://books.google.com/books?id=sk2SrZH3xEcC&pg=PA423}}{{cite thesis |last1=Lin |first1=Jianqiang |title=InGaAs Quantum-Well MOSFETs for logic applications |year=2015 |publisher=Massachusetts Institute of Technology |hdl=1721.1/99777 |type=Thesis }} that takes advantage of quantum tunneling to greatly increase the speed of transistor operation.{{Citation | title = WHAT'S NEWS: A review of the latest happenings in electronics | newspaper =Radio-Electronics | publisher=Gernsback | volume=62 |issue=5 | date =May 1991 | url =https://archive.org/stream/radio_electronics_1991-05/Radio_Electronics_May_1991_djvu.txt }}

Transportation

MOSFETs are widely used in transportation.{{Cite book |last1=Emadi |first1=Ali |title=Handbook of Automotive Power Electronics and Motor Drives |date=2017 |publisher=CRC Press |isbn=9781420028157 |page=117 |url=https://books.google.com/books?id=40duBwAAQBAJ&pg=PA117}} For example, they are commonly used for automotive electronics in the automotive industry.{{cite web|url=https://spinoff.nasa.gov/Spinoff2017/cg_1.html|title=CMOS Sensors Enable Phone Cameras, HD Video|website=NASA Spinoff|publisher=NASA|access-date=6 November 2019}} MOS technology is commonly used for a wide range of vehicles and transportation, which include the following applications.

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=Automotive industry=

{{See|Automotive electronics}}

File:2018 Tesla Model S 75D.jpg electric car. MOSFETs are the basis for modern electric road vehicles.]]

MOSFETs are widely used in the automotive industry, particularly for automotive electronics in motor vehicles. Automotive applications include the following.

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= Power MOSFET applications =

Power MOSFETs are widely used in transportation technology, which includes the following vehicles.

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In the automotive industry, power MOSFETs are widely used in automotive electronics, which include the following.

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=IGBT applications=

{{See also|Insulated-gate bipolar transistor#Applications}}

The insulated-gate bipolar transistor (IGBT) is a power transistor with characteristics of both a MOSFET and bipolar junction transistor (BJT). IGBTs are widely used in the following transportation applications.

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=Space industry=

File:Cassini Saturn Orbit Insertion.jpg spacecraft to Saturn used MOSFET power switch devices for power distribution.]]

In the space industry, MOSFET devices were adopted by NASA for space research in 1964, for its Interplanetary Monitoring Platform (IMP) program and Explorers space exploration program. The use of MOSFETs was a major step forward in the electronics design of spacecraft and satellites. The IMP D (Explorer 33), launched in 1966, was the first spacecraft to use the MOSFET. Data gathered by IMP spacecraft and satellites were used to support the Apollo program, enabling the first crewed Moon landing with the Apollo 11 mission in 1969.

The Cassini–Huygens to Saturn in 1997 had spacecraft power distribution accomplished 192 solid-state power switch (SSPS) devices, which also functioned as circuit breakers in the event of an overload condition. The switches were developed from a combination of two semiconductor devices with switching capabilities: the MOSFET and the ASIC (application-specific integrated circuit). This combination resulted in advanced power switches that had better performance characteristics than traditional mechanical switches.{{cite book |last1=Meltzer |first1=Michael |title=The Cassini-Huygens Visit to Saturn: An Historic Mission to the Ringed Planet |date=2015 |publisher=Springer |isbn=9783319076089 |page=70 |url=https://books.google.com/books?id=vTYLBgAAQBAJ&pg=PA70}}

Other applications

MOSFETs are commonly used for a wide range of other applications, which include the following.

{{columns-list|colwidth=50em|

  • Accelerometer{{cite book |last1=Riethmuller |first1=W. |last2=Benecke |first2=W. |last3=Schnakenberg |first3=U. |last4=Wagner |first4=B. |title=TRANSDUCERS '91: 1991 International Conference on Solid-State Sensors and Actuators. Digest of Technical Papers |chapter=Development of commercial CMOS process-based technologies for the fabrication of smart accelerometers |date=June 1991 |pages=416–419 |doi=10.1109/SENSOR.1991.148900|isbn=0-87942-585-7 |s2cid=111284977 }}
  • Alternative energy systems – renewable energy technology
  • Solar power – solar cells, solar battery applications
  • Amplifiers – Differential amplifiers,{{cite web |title=MOSFET DIFFERENTIAL AMPLIFIER |url=http://sites.bu.edu/engcourses/files/2016/08/mosfet-differential-amplifier.pdf |publisher=Boston University |access-date=10 August 2019}} op-amp,{{cite book|title=A Short History of Circuits and Systems: From Green, Mobile, Pervasive Networking to Big Data Computing|last1=Allstot|first1=David J.|date=2016|publisher=IEEE Circuits and Systems Society|isbn=9788793609860|editor-last1=Maloberti|editor-first1=Franco|pages=105–110|chapter=Switched Capacitor Filters|editor-last2=Davies|editor-first2=Anthony C.|chapter-url=https://ieee-cas.org/sites/default/files/a_short_history_of_circuits_and_systems-_ebook-_web.pdf|access-date=29 December 2019|archive-date=30 September 2021|archive-url=https://web.archive.org/web/20210930151716/https://ieee-cas.org/sites/default/files/a_short_history_of_circuits_and_systems-_ebook-_web.pdf|url-status=dead}} video amplifier
  • Analog electronics – analog circuit, analog amplifier, comparator, integrator, summer, multiplier, analog filter, inverter
  • Biomedical engineering
  • Business – banking, Internet commerce
  • Capacitors – MOS capacitor,{{cite web |last1=Hu |first1=Chenming |author1-link=Chenming Hu |title=MOS Capacitor |url=https://people.eecs.berkeley.edu/~hu/Chenming-Hu_ch5.pdf |website=UC Berkeley |date=13 February 2009 |access-date=6 October 2019}}{{cite book |last1=Sze |first1=Simon Min |author1-link=Simon Sze |last2=Lee |first2=Ming-Kwei |chapter=MOS Capacitor and MOSFET |title=Semiconductor Devices: Physics and Technology |date=May 2012 |publisher=John Wiley & Sons |isbn=9780470537947 |chapter-url=https://www.oreilly.com/library/view/semiconductor-devices-physics/9780470537947/13_chap05.html |access-date=6 October 2019}} switched capacitor, capacitor filter
  • Cash registers
  • CMOS circuits – phase-locked loop,{{cite book|url=https://books.google.com/books?id=kxYhNrOKuJQC|title=CMOS: Circuit Design, Layout, Simulation|last1=Baker|first1=R. Jacob|date=2011|publisher=John Wiley & Sons|isbn=9781118038239}} CMOS inverter
  • Digital electronics{{cite web |title=The Foundation of Today's Digital World: The Triumph of the MOS Transistor |url=https://www.youtube.com/watch?v=q6fBEjf9WPw |publisher=Computer History Museum |access-date=21 July 2019 |date=13 July 2010}} – digital circuits
  • Electronics industry{{cite book |last1=Chan |first1=Yi-Jen |title=Studies of InAIAs/InGaAs and GaInP/GaAs heterostructure FET's for high speed applications |date=1992 |publisher=University of Michigan |url=https://books.google.com/books?id=sV4eAQAAMAAJ |page=1 |quote=The Si MOSFET has revolutionized the electronics industry and as a result impacts our daily lives in almost every conceivable way.}} – semiconductor industry{{cite book |last1=Lécuyer |first1=Christophe |title=Making Silicon Valley: Innovation and the Growth of High Tech, 1930–1970 |date=2006 |publisher=Chemical Heritage Foundation |isbn=9780262122818 |pages=253–6 & 273 |url=https://books.google.com/books?id=5TgKinNy5p8C&pg=PA253}}{{cite web |title=60s Trends in the Semiconductor Industry |url=http://www.shmj.or.jp/english/trends/trd60s.html |website=Semiconductor History Museum of Japan |access-date=7 August 2019}}
  • Electronic signal processing – digital signal processing,{{cite web|url=https://www.computerhistory.org/siliconengine/single-chip-digital-signal-processor-introduced/|title=1979: Single Chip Digital Signal Processor Introduced|website=The Silicon Engine|publisher=Computer History Museum|access-date=13 May 2019}} digital signal processor,{{cite journal|last=Hays|first=Patrick|date=16 April 2004|title=DSPs: Back to the Future|journal=ACM Queue|volume=2|issue=1|pages=42–51|doi=10.1145/984458.984485|doi-access=free}} analog signal processing, transducer, mixed-signal, data conversion, pulse train, square waves
  • Analog-to-digital converter (ADC){{cite book|url=https://books.google.com/books?id=HikuAAAAMAAJ&pg=PA46|title=Electronic Components|date=1974|publisher=U.S. Government Printing Office|page=46}} – delta-sigma,{{cite book|url=https://books.google.com/books?id=Alv6nWVCkDIC|title=Nanometer CMOS Sigma-Delta Modulators for Software Defined Radio|last1=Morgado|first1=Alonso|last2=Río|first2=Rocío del|last3=Rosa|first3=José M. de la|date=2011|publisher=Springer Science & Business Media|isbn=9781461400370}} time-interleaved ADC
  • Digital-to-analog converter (DAC){{cite book|url=https://xdevs.com/doc/_Books/ASIC_Design/deep-submicron%20cmos%20ics.%20from%20basics%20to%20asics%20(veendrick-1998).pdf|title=Deep-Submicron CMOS ICs: From Basics to ASICs|last1=Veendrick|first1=Harry|date=2000|publisher=Kluwer Academic Publishers|isbn=9044001116|edition=2nd|pages=273–82|access-date=29 December 2019|archive-date=6 December 2020|archive-url=https://web.archive.org/web/20201206130923/https://xdevs.com/doc/_Books/ASIC_Design/deep-submicron%20cmos%20ics.%20from%20basics%20to%20asics%20(veendrick-1998).pdf|url-status=dead}} – CD players
  • Electronic switch{{cite book|url=https://books.google.com/books?id=PMHig7a-_hIC&pg=PA119|title=Electronic Circuits and Systems : Analog and Digital,1e|last1=Bapat|first1=Y. N.|date=1992|publisher=Tata McGraw-Hill Education|isbn=978-0-07-460040-5|page=119}}
  • Environmental technology{{cite book|url=https://books.google.com/books?id=yOjFDQAAQBAJ|title=MOS Devices for Low-Voltage and Low-Energy Applications|last1=Omura|first1=Yasuhisa|last2=Mallik|first2=Abhijit|last3=Matsuo|first3=Naoto|date=2017|publisher=John Wiley & Sons|isbn=9781119107354}} – environmental sensors
  • Industrial technology – instrumentation, CAD,{{cite conference|last1=Lewallen|first1=D. R.|title=Proceedings of the 6th annual conference on Design Automation - DAC '69 |year=1969|chapter=Mos LSI computer aided design system|conference=DAC '69 Proceedings of the 6th annual Design Automation Conference|pages=91–101|doi=10.1145/800260.809019}}{{cite conference|last1=Van Beek|first1=H. W.|title=Proceedings of the November 16-18, 1971, fall joint computer conference on - AFIPS '71 (Fall) |date=May 1972|chapter=Computer-aided design of MOS/LSI circuits|conference=AFIPS '72 (Spring) Proceedings of the 16–18 May 1972, spring joint computer conference|pages=1059–1063|doi=10.1145/1478873.1479014}} industrial control system, test gear applications, coal-fired power plants
  • Automation – motion control
  • Control systems – industrial control system, automated machine control system
  • Electric motor drives – braking chopper
  • Manufacturing
  • Gate drivers – compressor, hydraulic pump inverter, robotics, servo motor
  • Laser drivers{{cite web |title=ISM & Broadcast |url=https://www.st.com/en/radio-frequency-transistors/ism-broadcast.html |website=ST Microelectronics |access-date=3 December 2019}}
  • Medical industry – medical imaging (such as dental imaging) portable medical devices (such as hearing aid and implantable heart control), medical technology
  • Microtechnology – microelectronics, logic circuits, microelectromechanical systems (MEMS)
  • Military technology – data storage, military communication, defense monitoring sensors
  • Nanotechnology – nanoelectronics{{cite web |last1=Tsu-Jae King |first1=Liu |author-link1=Tsu-Jae King Liu |title=FinFET: History, Fundamentals and Future |url=https://people.eecs.berkeley.edu/~tking/presentations/KingLiu_2012VLSI-Tshortcourse |website=University of California, Berkeley |publisher=Symposium on VLSI Technology Short Course |date=11 June 2012 |access-date=9 July 2019 |archive-url=https://web.archive.org/web/20160528220227/http://people.eecs.berkeley.edu/~tking/presentations/KingLiu_2012VLSI-Tshortcourse |archive-date=28 May 2016 |url-status=live }}{{cite book |last1=Hisamoto |first1=Digh |last2=Hu |first2=Chenming |last3=Liu |first3=Tsu-Jae King |last4=Bokor |first4=Jeffrey|author4-link=Jeffrey Bokor |last5=Lee |first5=Wen-Chin |last6=Kedzierski |first6=Jakub |last7=Anderson |first7=Erik |last8=Takeuchi |first8=Hideki |last9=Asano |first9=Kazuya |title=International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217) |chapter=A folded-channel MOSFET for deep-sub-tenth micron era |date=December 1998 |pages=1032–1034 |doi=10.1109/IEDM.1998.746531|isbn=0-7803-4774-9 |s2cid=37774589 }}
  • Optical technology – optoelectronics and optical communication
  • Photonics – silicon photonics
  • Power-system protection – electrostatic discharge (ESD) protection, overvoltage protection, short circuit protection, temperature protection
  • Printing technology – 3D printing{{cite book|title=Advances in Additive Manufacturing, Modeling Systems and 3D Prototyping: Proceedings of the AHFE 2019 International Conference on Additive Manufacturing, Modeling Systems and 3D Prototyping|last1=Jayant|first1=Hemang Kumar|last2=Arora|first2=Manish|date= 24–28 July 2019|publisher=Springer International Publishing|isbn=978-3-030-20216-3|editor-last1=Nicolantonio|editor-first1=Massimo Di|pages=71–80|chapter=Induction Heating Based 3D Metal Printing of Eutectic Alloy Using Vibrating Nozzle|doi=10.1007/978-3-030-20216-3_7|s2cid=197613137 |editor-last2=Rossi|editor-first2=Emilio|editor-last3=Alexander|editor-first3=Thomas|chapter-url=https://books.google.com/books?id=DJebDwAAQBAJ&pg=PA71}}{{cite book|url=https://archive.org/details/practical3dprint0000evan|url-access=registration|title=Practical 3D Printers: The Science and Art of 3D Printing|last1=Evans|first1=Brian|date=2012|publisher=Apress|isbn=978-1-4302-4393-9|page=[https://archive.org/details/practical3dprint0000evan/page/n58 31]}}
  • Quality-of-life improvements
  • Resistors{{cite book|url=https://books.google.com/books?id=WqdzSq56lSQC&pg=PA121|title=The Design of CMOS Radio-Frequency Integrated Circuits|last1=Lee|first1=Thomas H.|date=2004|publisher=Cambridge University Press|isbn=978-0-521-83539-8|page=121}} – variable resistor{{cite book|url=https://books.google.com/books?id=eh60Ue_K2QkC&pg=PA335|title=Handbook for Sound Engineers|last1=Ballou|first1=Glen|date=2013|publisher=Taylor & Francis|isbn=9781136122538}}
  • Robotics
  • Silicon semiconductor devices{{cite book |last1=Feldman |first1=Leonard C. |author1-link=Leonard Feldman |chapter=Introduction |title=Fundamental Aspects of Silicon Oxidation |date=2001 |publisher=Springer Science & Business Media |isbn=9783540416821 |pages=1–11 |chapter-url=https://books.google.com/books?id=sV4y2-mWGNIC&pg=PA1}}{{cite book |last1=Dabrowski |first1=Jarek |last2=Müssig |first2=Hans-Joachim |chapter=1.2. The Silicon Age |title=Silicon Surfaces and Formation of Interfaces: Basic Science in the Industrial World |date=2000 |publisher=World Scientific |isbn=9789810232863 |pages=[https://archive.org/details/siliconsurfacesf0000dabr/page/3 3–13] |chapter-url=https://books.google.com/books?id=ZlefXcP3tQAC&pg=PA3 |url=https://archive.org/details/siliconsurfacesf0000dabr/page/3 }} – silicon integrated circuit (IC) chips
  • Surveillance industry
  • X-ray – X-ray detector, digital radiography,{{cite book|last1=Lança|first1=Luís|last2=Silva|first2=Augusto|title=Digital Imaging Systems for Plain Radiography |date=2013|publisher=Springer|isbn=978-1-4614-5066-5|location=New York|pages=14–17|chapter=Digital Radiography Detectors: A Technical Overview|doi=10.1007/978-1-4614-5067-2_2|hdl=10400.21/1932}} flat-panel detector{{cite journal|last1=Kump|first1=K|last2=Grantors|first2=P|last3=Pla|first3=F|last4=Gobert|first4=P|date=December 1998|title=Digital X-ray detector technology|journal=RBM-News|volume=20|issue=9|pages=221–226|doi=10.1016/S0222-0776(99)80006-6}}
  • Other uses – drones, robots, telescopic lens{{cite news |title=CMOS Image Sensors Market 2020 to 2025 By Technology Growth and Demand: STMicroelectronics N.V, Sony Corporation, Samsung Electronics |url=https://www.marketwatch.com/press-release/cmos-image-sensors-market-2020-to-2025-by-technology-growth-and-demand-stmicroelectronics-nv-sony-corporation-samsung-electronics-2020-03-09 |access-date=17 April 2020 |work=MarketWatch |date=9 March 2020}}

}}

References

{{reflist}}

{{Electronic components}}

{{Logic Families}}

{{DEFAULTSORT:MOSFET applications}}

Applications

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