transistor count
{{Short description|Number of transistors in a device}}
{{Use mdy dates|date=January 2015}}
{{Semiconductor manufacturing processes}}
The transistor count is the number of transistors in an electronic device (typically on a single substrate or silicon die). It is the most common measure of integrated circuit complexity (although the majority of transistors in modern microprocessors are contained in cache memories, which consist mostly of the same memory cell circuits replicated many times). The rate at which MOS transistor counts have increased generally follows Moore's law, which observes that transistor count doubles approximately every two years. However, being directly proportional to the area of a die, transistor count does not represent how advanced the corresponding manufacturing technology is. A better indication of this is transistor density which is the ratio of a semiconductor's transistor count to its die area.
Records
{{As of|2023}}, the highest transistor count in flash memory is Micron's 2{{nbsp}}terabyte (3D-stacked) 16-die, 232-layer V-NAND flash memory chip, with 5.3{{nbsp}}trillion floating-gate MOSFETs (3{{nbsp}}bits per transistor).
The highest transistor count in a single chip processor {{as of|2020|lc=y}} is that of the deep learning processor Wafer Scale Engine 2 by Cerebras. It has 2.6{{nbsp}}trillion MOSFETs in 84 exposed fields (dies) on a wafer, manufactured using TSMC's 7 nm FinFET process.{{Cite web |last=Everett |first=Joseph |date=August 26, 2020 |title=World's largest CPU has 850,000 7 nm cores that are optimized for AI and 2.6 trillion transistors |url=https://www.techreportarticles.com/news/artificial-intelligence/worlds-largest-cpu-chip-has-850000-7nm-cores-optimized-for-ai-most-powerful-processor/ |website=TechReportArticles}}
{{As of|2024}}, the GPU with the highest transistor count is Nvidia's Blackwell-based B100 accelerator, built on TSMC's custom 4NP process node and totaling 208 billion MOSFETs.
The highest transistor count in a consumer microprocessor {{as of|2025|March|lc=y}} is 184{{nbsp}}billion transistors, in Apple's ARM-based dual-die M3 Ultra SoC, which is fabricated using TSMC's 3 nm semiconductor manufacturing process.
class ="wikitable" style="text-align:center" |
Year
! Component ! Name ! Number of MOSFETs ! Remarks |
---|
2022
| Flash memory | Micron's V-NAND module | 5.3 | style="text-align:left;" | stacked package of sixteen 232-layer 3D NAND dies |
2020
| any processor | 2.6 | style="text-align:left;" | wafer-scale design of 84 exposed fields (dies) |
2024
| GPU | Nvidia B100 | 0.208 | style="text-align:left;" | Uses two reticle limit dies, with 104 billion transistors each, joined together and acting as a single large monolithic piece of silicon |
2025
| Microprocessor | 0.184 | style="text-align:left;" | SoC using two dies joined together with a high-speed bridge |
2020
| DLP | 0.059 | style="text-align:left;" | An IPU{{clarify|date=November 2024}} in contrast to CPU and GPU |
In terms of computer systems that consist of numerous integrated circuits, the supercomputer with the highest transistor count {{as of|2016|lc=y}} was the Chinese-designed Sunway TaihuLight, which has for all CPUs/nodes combined "about 400 trillion transistors in the processing part of the hardware" and "the DRAM includes about 12 quadrillion transistors, and that's about 97 percent of all the transistors."{{Cite web |url=https://www.quora.com/How-many-individual-transistors-are-in-the-worlds-most-powerful-supercomputer/answer/John-Gustafson-1 |title=John Gustafson's answer to How many individual transistors are in the world's most powerful supercomputer? |website=Quora |access-date=2019-08-22}} To compare, the smallest computer, {{as of|2018|lc=y}} dwarfed by a grain of rice, had on the order of 100,000 transistors. Early experimental solid-state computers had as few as 130 transistors but used large amounts of diode logic. The first carbon nanotube computer had 178 transistors and was a 1-bit one-instruction set computer, while a later one is 16-bit (its instruction set is 32-bit RISC-V though).
Ionic transistor chips ("water-based" analog limited processor), have up to hundreds of such transistors.{{Cite news |first=Francisco |last=Pires |date=2022-10-05 |title=Water-Based Chips Could be Breakthrough for Neural Networking, AI: Wetware has gained an entirely new meaning |url=https://www.tomshardware.com/news/water-based-chips-could-be-breakthrough-for-neural-networking-ai |access-date=2022-10-05 |website=Tom's Hardware |language=en}}
Estimates of the total numbers of transistors manufactured:
- Up to 2014: {{Val|2.9E21}}
- Up to 2018: {{Val|1.3E22}}{{cite web
|url=https://computerhistory.org/blog/13-sextillion-counting-the-long-winding-road-to-the-most-frequently-manufactured-human-artifact-in-history/
|first=David
|last=Laws
|title=13 Sextillion & Counting: The Long & Winding Road to the Most Frequently Manufactured Human Artifact in History
|website=Computer History Museum
|date=2018-04-02
|first=Jim
|last=Handy
|url=https://www.forbes.com/sites/jimhandy/2014/05/26/how-many-transistors-have-ever-shipped/
|title=How Many Transistors Have Ever Shipped?
|website=Forbes
|date=2014-05-26
}}
Transistor count
File:Moore's Law Transistor Count 1970-2020.png counts for microprocessors against dates of introduction. The curve shows counts doubling every two years, per Moore's law. ]]
= Microprocessors =
{{See also|Microprocessor chronology|Microcontroller}}
{{More citations needed|1=subsection|date=December 2019|talk=Microprocessors - More citations needed}}
A microprocessor incorporates the functions of a computer's central processing unit on a single integrated circuit. It is a multi-purpose, programmable device that accepts digital data as input, processes it according to instructions stored in its memory, and provides results as output.
The development of MOS integrated circuit technology in the 1960s led to the development of the first microprocessors.{{cite web |title=1971: Microprocessor Integrates CPU Function onto a Single Chip |url=https://www.computerhistory.org/siliconengine/microprocessor-integrates-cpu-function-onto-a-single-chip/ |website=The Silicon Engine |publisher=Computer History Museum |access-date=4 September 2019}} The 20-bit MP944, developed by Garrett AiResearch for the U.S. Navy's F-14 Tomcat fighter in 1970, is considered by its designer Ray Holt to be the first microprocessor. It was a multi-chip microprocessor, fabricated on six MOS chips. However, it was classified by the Navy until 1998. The 4-bit Intel 4004, released in 1971, was the first single-chip microprocessor.
Modern microprocessors typically include on-chip cache memories. The number of transistors used for these cache memories typically far exceeds the number of transistors used to implement the logic of the microprocessor (that is, excluding the cache). For example, the last DEC Alpha chip uses 90% of its transistors for cache.
class="wikitable sortable" style="text-align:left;"
! width=300px|Processor ! width=130px data-sort-type="number" | Transistor count ! Year ! Designer ! data-sort-type="number" | Process ! data-sort-type="number" | Area (mm2) ! data-sort-type="number" | Transistor | |
MP944 (20-bit, 6-chip, 28 chips total)
|74,442 (5,360 excl. ROM & RAM){{Cite book|last=Holt|first=Ray M.|title=The F14A Central Air Data Computer and the LSI Technology State-of-the-Art in 1968|year=1998|pages=8}}{{Cite web|last=Holt|first=Ray M.|date=2013|title=F14 TomCat MOS-LSI Chip Set|url=https://firstmicroprocessor.com/wp-content/uploads/2020/02/2013powerpoint.ppt|url-status=live|archive-url=https://web.archive.org/web/20201106091538/https://firstmicroprocessor.com/wp-content/uploads/2020/02/2013powerpoint.ppt|archive-date=6 November 2020|access-date=6 November 2020|website=First Microprocessor}} |1970{{cite web|last1=Holt|first1=Ray|title=World's First Microprocessor|url=https://www.firstmicroprocessor.com/|quote=1st fully integrated chip set microprocessor|access-date=5 March 2016}}{{efn|Declassified 1998}} |{{?}} |{{?}} |{{?}} | |
Intel 4004 (4-bit, 16-pin)
|2,250 |1971 |12 mm2 |188 | |
TMX 1795 (8-bit, 24-pin)
|1971 |{{?}} | 30.64 mm2 |100.5 | |
Intel 8008 (8-bit, 18-pin)
|3,500 |1972 |Intel |10,000 nm |14 mm2 |250 | |
NEC μCOM-4 (4-bit, 42-pin)
|2,500{{cite journal |author1=Ryoichi Mori |author2=Hiroaki Tajima |author3=Morihiko Tajima |author4=Yoshikuni Okada |title=Microprocessors in Japan |journal=Euromicro Newsletter |volume=3 |issue=4 |pages=50–7 |date=October 1977 |doi=10.1016/0303-1268(77)90111-0}}{{cite web|title=NEC 751 (uCOM-4) |publisher=The Antique Chip Collector's Page |url=http://www.antiquetech.com/chips/NEC751.htm |access-date=2010-06-11 |url-status=dead |archive-url=https://web.archive.org/web/20110525202756/http://www.antiquetech.com/chips/NEC751.htm |archive-date=2011-05-25 }} |1973 |NEC |{{?}} |{{?}} | |
Toshiba TLCS-12 (12-bit)
|1973 |32.45 mm2 |340+ | |
Intel 4040 (4-bit, 16-pin)
|3,000 |1974 |Intel |10,000 nm |12 mm2 |250 | |
Motorola 6800 (8-bit, 40-pin)
|4,100 |1974 |6,000 nm |16 mm2 |256 | |
Intel 8080 (8-bit, 40-pin)
|6,000 |1974 |Intel |6,000 nm |20 mm2 |300 | |
TMS 1000 (4-bit, 28-pin)
|8,000{{efn|The TMS1000 is a microcontroller, the transistor count includes memory and input/output controllers, not just the CPU.}} |1974{{Cite web|url=http://www.ti.com/corp/docs/company/history/lowbandwidthtimelinesemiconductor.shtml?keyMatch=TMS-1000&tisearch=Search-EN-Everything |title=Low Bandwidth Timeline{{Snd}} Semiconductor |website=Texas Instruments |access-date=2016-06-22}} |Texas Instruments |8,000 nm |11 mm2 |730 | |
MOS Technology 6502 (8-bit, 40-pin)
|4,528{{efn|3,510 without depletion mode pull-up transistors}}{{Cite web|url=https://research.swtch.com/6502|title= The MOS 6502 and the Best Layout Guy in the World|website=research.swtch.com|date=January 3, 2011|access-date=2019-09-03}} |1975 |8,000 nm |21 mm2 |216 | |
Intersil IM6100 (12-bit, 40-pin; clone of PDP-8)
|4,000 |1975 |{{?}} |{{?}} |{{?}} | |
CDP 1801 (8-bit, 2-chip, 40-pin)
|5,000 |1975 |RCA |{{?}} |{{?}} |{{?}} | |
RCA 1802 (8-bit, 40-pin)
|5,000 |1976 |RCA |5,000 nm |27 mm2 |185 | |
Zilog Z80 (8-bit, 4-bit ALU, 40-pin)
|8,500{{efn|6,813 without depletion mode pull-up transistors}} |1976 |4,000 nm |18 mm2 |470 | |
Intel 8085 (8-bit, 40-pin)
|6,500 |1976 |Intel |20 mm2 |325 | |
TMS9900 (16-bit)
|8,000 |1976 |Texas Instruments |{{?}} |{{?}} |{{?}} | |
Bellmac-8 (8-bit)
|7,000 |1977 |5,000 nm |{{?}} |{{?}} | |
Motorola 6809 (8-bit with some 16-bit features, 40-pin)
|9,000 |1978 |Motorola |5,000 nm |21 mm2 |430 | |
Intel 8086 (16-bit, 40-pin)
|1978 |Intel |3,000 nm |33 mm2 |880 | |
Zilog Z8000 (16-bit)
|1979 |Zilog |5,000-6,000 nm (design rules) |39.31 mm2 (238x256 mil2) |445 | |
Intel 8088 (16-bit, 8-bit data bus)
|29,000 |1979 |Intel |3,000 nm |33 mm2 |880 | |
Motorola 68000 (16/32-bit, 32-bit registers, 16-bit ALU)
|68,000{{cite web |title=Chip Hall of Fame: Motorola MC68000 Microprocessor |url=https://spectrum.ieee.org/chip-hall-of-fame-motorola-mc68000-microprocessor |website=IEEE Spectrum |publisher=Institute of Electrical and Electronics Engineers |access-date=19 June 2019 |date=30 June 2017}} |1979 |Motorola |3,500 nm |44 mm2 |1,550 | |
Intel 8051 (8-bit, 40-pin)
|50,000 |1980 |Intel |{{?}} |{{?}} |{{?}} | |
WDC 65C02
|1981 |WDC |3,000 nm |6 mm2 |1,920 | |
|ROMP (32-bit) |45,000 |1981 |IBM |2,000 nm |58.52 mm2 |770 | |
Intel 80186 (16-bit, 68-pin)
|55,000 |1982 |Intel |3,000 nm |60 mm2 |920 | |
Intel 80286 (16-bit, 68-pin)
|134,000 |1982 |Intel |49 mm2 |2,730 | |
WDC 65C816 (8/16-bit)
|1983 |WDC |9 mm2 |2,400 | |
NEC V20
|63,000 |1984 |NEC |{{?}} |{{?}} |{{?}} | |
Motorola 68020 (32-bit; 114 pins used)
|1984 |Motorola |2,000 nm |85 mm2 |2,200 | |
Intel 80386 (32-bit, 132-pin; no cache)
|275,000 |1985 |Intel |1,500 nm |104 mm2 |2,640 | |
ARM 1 (32-bit; no cache)
|1985 |3,000 nm |50 mm2 |500 | |
Novix NC4016 (16-bit)
|{{?}} |{{?}} | |
SPARC MB86900 (32-bit; no cache)
|1986 |1,200 nm |{{?}} |{{?}} | |
NEC V60{{cite journal |vauthors=Kimura S, Komoto Y, Yano Y |title=Implementation of the V60/V70 and its FRM function |journal=IEEE Micro |volume=8 |issue=2 |pages=22–36 |year=1988 |doi=10.1109/40.527 |s2cid=9507994 }} (32-bit; no cache)
|375,000 |1986 |NEC |1,500 nm |{{?}} |{{?}} | |
ARM 2 (32-bit, 84-pin; no cache)
|27,000{{Cite web|url=https://en.wikichip.org/wiki/vti/vl86cx/vl2333|title=VL2333 - VTI - WikiChip|website=en.wikichip.org|access-date=2019-08-31}} |1986 |Acorn |2,000 nm |30.25 mm2 |890 | |
Z80000 (32-bit; very small cache)
|91,000 |1986 |Zilog |{{?}} |{{?}} |{{?}} | |
NEC V70 (32-bit; no cache)
|385,000 |1987 |NEC |1,500 nm |{{?}} |{{?}} | |
Hitachi Gmicro/200{{cite journal |vauthors=Inayoshi H, Kawasaki I, Nishimukai T, Sakamura K |title=Realization of Gmicro/200 |journal=IEEE Micro |volume=8 |issue=2 |pages=12–21 |year=1988 |doi=10.1109/40.526 |s2cid=36938046 }}
|730,000 |1987 |{{?}} |{{?}} | |
Motorola 68030 (32-bit, very small caches)
|273,000 |1987 |Motorola |102 mm2 |2,680 | |
TI Explorer's 32-bit Lisp machine chip
|1987 |Texas Instruments |{{?}} |{{?}} | |
DEC WRL MultiTitan
{{cite journal|author-link1=Norman Jouppi |first1=Norman P. |last1=Jouppi |first2=Jeffrey Y. F. |last2=Tang |title=A 20-MIPS Sustained 32-bit CMOS Microprocessor with High Ratio of Sustained to Peak Performance |journal=IEEE Journal of Solid-State Circuits |volume=24 |issue=5 |date=July 1989 |id=WRL Research Report 89/11 |page=i |citeseerx=10.1.1.85.988 |bibcode=1989IJSSC..24.1348J |doi=10.1109/JSSC.1989.572612 }} |1988 |1,500 nm |61 mm2 |2,950 | |
Intel i960 (32-bit, 33-bit memory subsystem, no cache)
|1988 |Intel |1,500 nm{{cite web |title=Intel i960 Embedded Microprocessor |url=http://micro.magnet.fsu.edu/optics/olympusmicd/galleries/chips/intel960b.html |archive-url=https://web.archive.org/web/20030303223737/http://micro.magnet.fsu.edu/optics/olympusmicd/galleries/chips/intel960b.html |url-status=dead |archive-date=3 March 2003 |website=National High Magnetic Field Laboratory |publisher=Florida State University |access-date=29 June 2019 |date=3 March 2003}} |{{?}} |{{?}} | |
Intel i960CA (32-bit, cache)
|1989 |Intel |800 nm |143 mm2 |4,200 | |
Intel i860 (32/64-bit, 128-bit SIMD, cache, VLIW)
|1,000,000{{cite book |last1=Venkatasawmy |first1=Rama |title=The Digitization of Cinematic Visual Effects: Hollywood's Coming of Age |date=2013 |publisher=Rowman & Littlefield |isbn=9780739176214 |page=198 |url=https://books.google.com/books?id=tg2ix9VD_-sC&pg=PA198}} |1989 |Intel |{{?}} |{{?}} | {{?}} |
Intel 80486 (32-bit, 8 KB cache)
|1,180,235 |1989 |Intel |1,000 nm |173 mm2 |6,822 | |
ARM 3 (32-bit, 4 KB cache)
|310,000 |1989 |Acorn |1,500 nm |87 mm2 |3,600 | |
POWER1 (9-chip module, 72 kB of cache)
|1990 |IBM |1,000 nm |1,283.61 mm2 |5,375 | |
Motorola 68040 (32-bit, 8 KB caches)
|1,200,000 |1990 |Motorola |650 nm |152 mm2 |7,900 | |
R4000 (64-bit, 16 KB of caches)
|1,350,000 |1991 |MIPS |1,000 nm |213 mm2 |6,340 | |
ARM 6 (32-bit, no cache for this 60 variant)
|35,000 |1991 |ARM |800 nm |{{?}} |{{?}} | |
Hitachi SH-1 (32-bit, no cache)
|1992{{cite web |title=SH2: A Low Power RISC Micro for Consumer Applications |url=http://www.hotchips.org/wp-content/uploads/hc_archives/hc06/2_Mon/HC6.S4/HC6.4.2.pdf |publisher=Hitachi |access-date=27 June 2019 |archive-date=May 10, 2019 |archive-url=https://web.archive.org/web/20190510040218/http://www.hotchips.org/wp-content/uploads/hc_archives/hc06/2_Mon/HC6.S4/HC6.4.2.pdf |url-status=dead }} |Hitachi |800 nm |100 mm2 |6,000 | |
Intel i960CF (32-bit, cache)
|1992 |Intel |{{?}} |125 mm2 |7,200 | |
Alpha 21064 (64-bit, 290-pin; 16 KB of caches)
|1,680,000 |1992 |DEC |750 nm |233.52 mm2 |7,190 | |
Hitachi HARP-1 (32-bit, cache)
|2,800,000{{cite web |title=HARP-1: A 120 MHz Superscalar PA-RISC Processor |url=https://www.hotchips.org/wp-content/uploads/hc_archives/hc05/3_Tue/HC05.S8/HC05.8.1-Matsubara-Hitachi-HARP-1.pdf |publisher=Hitachi |access-date=19 June 2019 |archive-date=April 23, 2016 |archive-url=https://web.archive.org/web/20160423084425/http://www.hotchips.org/wp-content/uploads/hc_archives/hc05/3_Tue/HC05.S8/HC05.8.1-Matsubara-Hitachi-HARP-1.pdf |url-status=dead }} |1993 |Hitachi |500 nm |267 mm2 |10,500 | |
Pentium (32-bit, 16 KB of caches)
|3,100,000 |1993 |Intel |800 nm |294 mm2 |10,500 | |
POWER2 (8-chip module, 288 kB of cache)
|1993 |IBM |720 nm |1,217.39 mm2 |18,923 | |
ARM700 (32-bit; 8 KB cache)
|1994 |ARM |700 nm |68.51 mm2 |8,451 | |
MuP21 (21-bit,{{Cite web|url=http://www.ultratechnology.com/p21.html|title=Forth Multiprocessor Chip MuP21|quote=MuP21 has a 21-bit CPU core, a memory coprocessor, and a video coprocessor|website=www.ultratechnology.com|access-date=2019-09-06}} 40-pin; includes video)
|1994 |Offete Enterprises |1,200 nm |{{?}} |{{?}} | |
Motorola 68060 (32-bit, 16 KB of caches)
|2,500,000 |1994 |Motorola |218 mm2 |11,500 | |
PowerPC 601 (32-bit, 32 KB of caches)
|1994 |600 nm |121 mm2 |23,000 | |
PowerPC 603 (32-bit, 16 KB of caches)
|1994 |500 nm |84.76 mm2 |18,900 | |
PowerPC 603e (32-bit, 32 KB of caches)
|1995 |500 nm |98 mm2 |26,500 | |
Alpha 21164 EV5 (64-bit, 112 kB cache)
|1995 |DEC |500 nm |298.65 mm2 |31,140 | |
SA-110 (32-bit, 32 KB of caches)
|1995 |Acorn, DEC, Apple |50 mm2 |50,000 | |
Pentium Pro (32-bit, 16 KB of caches;{{Cite web |url=http://hw-museum.cz/cpu/7/intel-pentium-pro-180 |title=Intel Pentium Pro 180 |website=hw-museum.cz |date=February 20, 2015 |access-date=2019-09-08}} L2 cache on-package, but on separate die)
|1995 |Intel |500 nm |307 mm2 |18,000 | |
PA-8000 64-bit, no cache
|1995 |HP |500 nm |337.69 mm2 |11,300 | |
Alpha 21164A EV56 (64-bit, 112 kB cache)
|1996 |DEC |350 nm |208.8 mm2 |46,260 | |
AMD K5 (32-bit, caches)
|4,300,000 |1996 |AMD |500 nm |251 mm2 |17,000 | |
Pentium II Klamath (32-bit, 64-bit SIMD, caches)
|7,500,000 |1997 |Intel |350 nm |195 mm2 |39,000 | |
AMD K6 (32-bit, caches)
|8,800,000 |1997 |AMD |350 nm |162 mm2 |54,000 | |
F21 (21-bit; includes e.g. video)
|15,000 |Offete Enterprises |{{?}} |{{?}} |{{?}} | |
AVR (8-bit, 40-pin; w/memory)
|1997 |{{?}} |{{?}} |{{?}} | |
Pentium II Deschutes (32-bit, large cache)
|7,500,000 |1998 |Intel |113 mm2 |66,000 | |
Alpha 21264 EV6 (64-bit)
|1998 |DEC |350 nm |313.96 mm2 |48,400 | |
Alpha 21164PC PCA57 (64-bit, 48 kB cache)
|5,700,000 |1998 |Samsung |280 nm |100.5 mm2 |56,700 | |
Hitachi SH-4 (32-bit, caches)
{{cite journal |last1=Nakagawa |first1=Norio |last2=Arakawa |first2=Fumio |date=April 1999 |title=Entertainment Systems and High-Performance Processor SH-4 |url=https://www.hitachi.com/rev/1999/revapr99/r2_103.pdf |journal=Hitachi Review |volume=48 |issue=2 |pages=58–63 |access-date=2023-03-18 }} |3,200,000{{cite book |date=1998 |pages=18.1-1 - 18.1-11 |publisher=IEEE |doi=10.1109/ISSCC.1998.672469 |chapter-url=https://ieeexplore.ieee.org/document/672469 |access-date=17 March 2023|last1=Nishii |first1=O. |last2=Arakawa |first2=F. |last3=Ishibashi |first3=K. |last4=Nakano |first4=S. |last5=Shimura |first5=T. |last6=Suzuki |first6=K. |last7=Tachibana |first7=M. |last8=Totsuka |first8=Y. |last9=Tsunoda |first9=T. |last10=Uchiyama |first10=K. |last11=Yamada |first11=T. |last12=Hattori |first12=T. |last13=Maejima |first13=H. |last14=Nakagawa |first14=N. |last15=Narita |first15=S. |last16=Seki |first16=M. |last17=Shimazaki |first17=Y. |last18=Satomura |first18=R. |last19=Takasuga |first19=T. |last20=Hasegawa |first20=A. |title=1998 IEEE International Solid-State Circuits Conference. Digest of Technical Papers, ISSCC. First Edition (Cat. No. 98CH36156) |chapter=A 200 MHZ 1.2 W 1.4 GFLOPS microprocessor with graphic operation unit |isbn=0-7803-4344-1 |s2cid=45392734 }} |1998 |Hitachi |250 nm |57.76 mm2 |55,400 | |
ARM 9TDMI (32-bit, no cache)
|1999 |Acorn |350 nm |4.8 mm2 |23,100 | |
Pentium III Katmai (32-bit, 128-bit SIMD, caches)
|9,500,000 |1999 |Intel |250 nm |128 mm2 |74,000 | |
Emotion Engine (64-bit, 128-bit SIMD, cache)
|10,500,000 |1999 |250 nm |239.7 mm2{{cite journal |last1=Diefendorff |first1=Keith |title=Sony's Emotionally Charged Chip: Killer Floating-Point "Emotion Engine" To Power PlayStation 2000 |journal=Microprocessor Report |date=April 19, 1999 |volume=13 |issue=5 |s2cid=29649747 |url=http://pdfs.semanticscholar.org/9248/eea6c98e5a7fc45606d9d562a0e74707ce43.pdf |archive-url=https://web.archive.org/web/20190228125309/http://pdfs.semanticscholar.org/9248/eea6c98e5a7fc45606d9d562a0e74707ce43.pdf |url-status=dead |archive-date=February 28, 2019 |access-date=19 June 2019}} |43,800 – 56,300 | |
Pentium II Mobile Dixon (32-bit, caches)
|27,400,000 |1999 |Intel |180 nm |180 mm2 |152,000 | |
AMD K6-III (32-bit, caches)
|21,300,000 |1999 |AMD |250 nm |118 mm2 |181,000 | |
AMD K7 (32-bit, caches)
|22,000,000 |1999 |AMD |250 nm |184 mm2 |120,000 | |
Gekko (32-bit, large cache)
|21,000,000{{cite web |title=NVIDIA GeForce 7800 GTX GPU Review |url=https://pcper.com/2005/06/nvidia-geforce-7800-gtx-gpu-review/ |website=PC Perspective |access-date=18 June 2019 |date=22 June 2005}} |2000 |IBM, Nintendo |180 nm |43 mm2 |490,000 (check) | |
Pentium III Coppermine (32-bit, large cache)
|21,000,000 |2000 |Intel |180 nm |80 mm2 |263,000 | |
Pentium 4 Willamette (32-bit, large cache)
|42,000,000 |2000 |Intel |180 nm |217 mm2 |194,000 | |
SPARC64 V (64-bit, large cache)
|2001 |Fujitsu |130 nmKrewell, Kevin (21 October 2002). [http://www.eecg.toronto.edu/~moshovos/ACA07/lecturenotes/ultrasparc5%2520(mpr).pdf "Fujitsu's SPARC64 V Is Real Deal".] Microprocessor Report. |290 mm2 |659,000 | |
Pentium III Tualatin (32-bit, large cache)
|45,000,000 |2001 |Intel |130 nm |81 mm2 |556,000 | |
Pentium 4 Northwood (32-bit, large cache)
|55,000,000 |2002 |Intel |130 nm |145 mm2 |379,000 | |
Itanium 2 McKinley (64-bit, large cache)
|220,000,000 |2002 |Intel |180 nm |421 mm2 |523,000 | |
Alpha 21364 (64-bit, 946-pin, SIMD, very large caches)
|2003 |DEC |180 nm |397 mm2 |383,000 | |
AMD K7 Barton (32-bit, large cache)
|54,300,000 |2003 |AMD |130 nm |101 mm2 |538,000 | |
AMD K8 (64-bit, large cache)
|105,900,000 |2003 |AMD |130 nm |193 mm2 |548,700 | |
Pentium M Banias (32-bit)
|2003 |Intel |130 nm |83 mm2 |928,000 | |
Itanium 2 Madison 6M (64-bit)
|410,000,000 |2003 |Intel |130 nm |374 mm2 |1,096,000 | |
PlayStation 2 single chip (CPU + GPU)
{{cite web |url=https://playstationdev.wiki/ps2devwiki/EE%2BGS |title=EE+GS |website=PS2 Dev Wiki }} {{cite press release |date=2003-11-27 |title=Sony MARKETING (JAPAN) ANNOUNCES LAUNCH OF "PSX" DESR-5000 and DESR-7000 TOWARDS THE END OF 2003 |url=https://www.sony.com/en/SonyInfo/News/Press_Archive/200310/03-1007E/ |publisher=Sony }} |Sony, Toshiba {{cite news |title=EMOTION ENGINE AND GRAPHICS SYNTHESIZER USED IN THE CORE OF PLAYSTATION BECOME ONE CHIP |url=https://www.sie.com/content/dam/corporate/en/corporate/release/pdf/030421be.pdf |access-date=19 March 2023 |publisher=Sony |date=April 21, 2003 {{cite web |url=https://www.theregister.com/2004/01/30/sony_psxs_90nm_cpu/ |title=Sony PSX's 90nm CPU is 'not 90nm' |website=The Register |date=2004-01-30 {{cite web |url=https://www.eetimes.com/semi-insights-stands-by-not-90-nm-description-of-psx-chip/ |title=Semi Insights stands by 'not 90-nm' description of PSX chip |website=EE Times |date=2004-02-05 }} |86 mm2 |622,100 | |
Pentium 4 Prescott (32-bit, large cache)
|112,000,000 |2004 |Intel |110 mm2 |1,018,000 | |
Pentium M Dothan (32-bit)
|2004 |Intel |90 nm |87 mm2 |1,655,000 | |
SPARC64 V+ (64-bit, large cache)
|400,000,000Fujitsu Limited (August 2004). SPARC64 V Processor For UNIX Server. |2004 |Fujitsu |90 nm |294 mm2 |1,360,000 | |
Itanium 2 (64-bit;9 MB cache)
|592,000,000 |2004 |Intel |130 nm |432 mm2 |1,370,000 | |
Pentium 4 Prescott-2M (32-bit, large cache)
|169,000,000 |2005 |Intel |90 nm |143 mm2 |1,182,000 | |
Pentium D Smithfield (64-bit, large cache)
|228,000,000 |2005 |Intel |90 nm |206 mm2 |1,107,000 | |
Xenon (64-bit, 128-bit SIMD, large cache)
|165,000,000 |2005 |IBM |90 nm |{{?}} |{{?}} | |
Cell (32-bit, cache)
|250,000,000{{cite web |title=A Glimpse Inside The Cell Processor |url=https://www.gamedeveloper.com/programming/a-glimpse-inside-the-cell-processor |website=Gamasutra |access-date=19 June 2019 |date=July 13, 2006}} |2005 |Sony, IBM, Toshiba |90 nm |221 mm2 |1,131,000 | |
Pentium 4 Cedar Mill (32-bit, large cache)
|184,000,000 |2006 |Intel |90 mm2 |2,044,000 | |
Pentium D Presler (64-bit, large cache)
|2006 |Intel |65 nm |162 mm2 |2,235,000 | |
Core 2 Duo Conroe (dual-core 64-bit, large caches)
|291,000,000 |2006 |Intel |65 nm |143 mm2 |2,035,000 | |
Dual-core Itanium 2 (64-bit, SIMD, large caches)
|2006 |Intel |90 nm |596 mm2 |2,852,000 | |
AMD K10 quad-core 2M L3 (64-bit, large caches)
|2007 |AMD |65 nm |283 mm2 |1,636,000 | |
ARM Cortex-A9 (32-bit, (optional) SIMD, caches)
|2007 |ARM |45 nm |31 mm2 |839,000 | |
Core 2 Duo Wolfdale (dual-core 64-bit, SIMD, caches)
|411,000,000 |2007 |Intel |45 nm |107 mm2 |3,841,000 | |
POWER6 (64-bit, large caches)
|789,000,000 |2007 |IBM |65 nm |341 mm2 |2,314,000 | |
Core 2 Duo Allendale (dual-core 64-bit, SIMD, large caches)
|169,000,000 |2007 |Intel |65 nm |111 mm2 |1,523,000 | |
Uniphier
|250,000,000{{cite news |title=Panasonic starts to sell a New-generation UniPhier System LSI |url=http://panasonic.co.jp/corp/news/official.data/data.dir/en071010-3/en071010-3.html |access-date=2 July 2019 |publisher=Panasonic |date=October 10, 2007}} |2007 |45 nm |{{?}} |{{?}} | |
SPARC64 VI (64-bit, SIMD, large caches)
|540,000,000 |Fujitsu |90 nm |421 mm2 |1,283,000 | |
Core 2 Duo Wolfdale 3M (dual-core 64-bit, SIMD, large caches)
|230,000,000 |2008 |Intel |45 nm |83 mm2 |2,771,000 | |
Core i7 (quad-core 64-bit, SIMD, large caches)
|731,000,000 |2008 |Intel |45 nm |263 mm2 |2,779,000 | |
AMD K10 quad-core 6M L3 (64-bit, SIMD, large caches)
|2008 |AMD |45 nm |258 mm2 |2,938,000 | |
Atom (32-bit, large cache)
|47,000,000 |2008 |Intel |24 mm2 |1,958,000 | |
SPARC64 VII (64-bit, SIMD, large caches)
|600,000,000 |Fujitsu |65 nm |445 mm2 |1,348,000 | |
Six-core Xeon 7400 (64-bit, SIMD, large caches)
|1,900,000,000 |2008 |Intel |45 nm |503 mm2 |3,777,000 | |
Six-core Opteron 2400 (64-bit, SIMD, large caches)
|904,000,000 |2009 |AMD |45 nm |346 mm2 |2,613,000 | |
SPARC64 VIIIfx (64-bit, SIMD, large caches)
|2009 |Fujitsu |45 nm |513 mm2 |1,481,000 | |
Atom (Pineview) 64-bit, 1-core, 512 kB L2 cache
|123,000,000{{cite web |url=https://ark.intel.com/content/www/us/en/ark/products/42503/intel-atom-processor-n450-512k-cache-1-66-ghz.html |title=Intel Atom N450 specifications |website=Intel |access-date=2023-06-08 }} |2010 |Intel |45 nm |66 mm2 |1,864,000 | |
Atom (Pineview) 64-bit, 2-core, 1 MB L2 cache
|176,000,000{{cite web |url=https://ark.intel.com/content/www/us/en/ark/products/43098/intel-atom-processor-d510-1m-cache-1-66-ghz.html |title=Intel Atom D510 specifications |website=Intel |access-date=2023-06-08 }} |2010 |Intel |45 nm |87 mm2 |2,023,000 | |
SPARC T3 (16-core 64-bit, SIMD, large caches)
|2010 |40 nm |377 mm2 |2,653,000 | |
Six-core Core i7 (Gulftown)
|1,170,000,000 |2010 |Intel |32 nm |240 mm2 |4,875,000 | |
POWER7 32M L3 (8-core 64-bit, SIMD, large caches)
|1,200,000,000 |2010 |IBM |45 nm |567 mm2 |2,116,000 | |
Quad-core z196{{cite web|url=http://www-03.ibm.com/press/us/en/pressrelease/32414.wss#release |archive-url=https://web.archive.org/web/20100905053649/http://www-03.ibm.com/press/us/en/pressrelease/32414.wss#release |url-status=dead |archive-date=September 5, 2010 |title=IBM to Ship World's Fastest Microprocessor |publisher=IBM|date=2010-09-01 |access-date=2014-08-09}} (64-bit, very large caches)
|1,400,000,000 |2010 |IBM |45 nm |512 mm2 |2,734,000 | |
Quad-core Itanium Tukwila (64-bit, SIMD, large caches)
|2010 |Intel |65 nm |699 mm2 |2,861,000 | |
Xeon Nehalem-EX (8-core 64-bit, SIMD, large caches)
|2010 |Intel |45 nm |684 mm2 |3,363,000 | |
SPARC64 IXfx (64-bit, SIMD, large caches)
|1,870,000,000{{citation| url = https://www.theregister.co.uk/2011/11/21/fujitsu_sparc64_ixfx_fx10_details| title = Fujitsu parades 16-core Sparc64 super stunner| first = Timothy Prickett| last = Morgan| date = November 21, 2011| work = The Register| access-date = December 8, 2011}} |2011 |Fujitsu |40 nm |484 mm2 |3,864,000 | |
Quad-core + GPU Core i7 (64-bit, SIMD, large caches)
|1,160,000,000 |2011 |Intel |32 nm |216 mm2 |5,370,000 | |
Six-core Core i7/8-core Xeon E5 (Sandy Bridge-E/EP) (64-bit, SIMD, large caches) |2011 |Intel |32 nm |434 mm2 |5,230,000 | |
Xeon Westmere-EX (10-core 64-bit, SIMD, large caches)
|2,600,000,000 |2011 |Intel |32 nm |512 mm2 |5,078,000 | |
Atom "Medfield" (64-bit)
|2012 |Intel |64 mm2 |6,750,000 | |
SPARC64 X (64-bit, SIMD, caches)
|2012 |Fujitsu |28 nm |600 mm2 |4,983,000 | |
AMD Bulldozer (8-core 64-bit, SIMD, caches)
|1,200,000,000{{cite web | url=http://www.anandtech.com/showdoc.aspx?i=3276&p=9 | title=Intel's Atom Architecture: The Journey Begins | publisher=AnandTech | access-date=April 4, 2010 }} |2012 |AMD |32 nm |315 mm2 |3,810,000 | |
Quad-core + GPU AMD Trinity (64-bit, SIMD, caches)
|1,303,000,000 |2012 |AMD |32 nm |246 mm2 |5,297,000 | |
Quad-core + GPU Core i7 Ivy Bridge (64-bit, SIMD, caches)
|1,400,000,000 |2012 |Intel |160 mm2 |8,750,000 | |
POWER7+ (8-core 64-bit, SIMD, 80 MB L3 cache)
|2,100,000,000 |2012 |IBM |32 nm |567 mm2 |3,704,000 | |
Six-core zEC12 (64-bit, SIMD, large caches)
|2,750,000,000 |2012 |IBM |32 nm |597 mm2 |4,606,000 | |
Itanium Poulson (8-core 64-bit, SIMD, caches)
|3,100,000,000 |2012 |Intel |32 nm |544 mm2 |5,699,000 | |
Xeon Phi (61-core 32-bit, 512-bit SIMD, caches)
|2012 |Intel |22 nm |720 mm2 |6,944,000 | |
Apple A7 (dual-core 64/32-bit ARM64, "mobile SoC", SIMD, caches)
|1,000,000,000 |2013 |28 nm |102 mm2 |9,804,000 | |
Six-core Core i7 Ivy Bridge E (64-bit, SIMD, caches)
|1,860,000,000 |2013 |Intel |22 nm |256 mm2 |7,266,000 | |
POWER8 (12-core 64-bit, SIMD, caches)
|4,200,000,000 |2013 |IBM |22 nm |650 mm2 |6,462,000 | |
Xbox One main SoC (64-bit, SIMD, caches)
|5,000,000,000 |2013 |Microsoft, AMD |28 nm |363 mm2 |13,770,000 | |
Quad-core + GPU Core i7 Haswell (64-bit, SIMD, caches)
|2014 |Intel |22 nm |177 mm2 |7,910,000 | |
Apple A8 (dual-core 64/32-bit ARM64 "mobile SoC", SIMD, caches)
|2,000,000,000 |2014 |Apple |20 nm |89 mm2 |22,470,000 | |
Core i7 Haswell-E (8-core 64-bit, SIMD, caches)
|2014 |Intel |22 nm |355 mm2 |7,324,000 | |
Apple A8X (tri-core 64/32-bit ARM64 "mobile SoC", SIMD, caches)
|2014 |Apple |20 nm |128 mm2 |23,440,000 | |
Xeon Ivy Bridge-EX (15-core 64-bit, SIMD, caches)
|2014 |Intel |22 nm |541 mm2 |7,967,000 | |
Xeon Haswell-E5 (18-core 64-bit, SIMD, caches)
|2014 |Intel |22 nm |661 mm2 |8,411,000 | |
Quad-core + GPU GT2 Core i7 Skylake K (64-bit, SIMD, caches)
|1,750,000,000 |2015 |Intel |122 mm2 |14,340,000 | |
Dual-core + GPU Iris Core i7 Broadwell-U (64-bit, SIMD, caches)
|2015 |Intel |14 nm |133 mm2 |14,290,000 | |
rowspan="2" | Apple A9 (dual-core 64/32-bit ARM64 "mobile SoC", SIMD, caches)
|rowspan="2" | 2,000,000,000+ |rowspan="2" | 2015 |rowspan="2" | Apple |14 nm |96 mm2 |20,800,000+ | |
16 nm (TSMC) |104.5 mm2 |19,100,000+ | |
Apple A9X (dual core 64/32-bit ARM64 "mobile SoC", SIMD, caches)
|3,000,000,000+ |2015 |Apple |16 nm |143.9 mm2 |20,800,000+ | |
IBM z13 (64-bit, caches)
|3,990,000,000 |2015 |IBM |22 nm |678 mm2 |5,885,000 | |
IBM z13 Storage Controller
|7,100,000,000 |2015 |IBM |22 nm |678 mm2 |10,472,000 | |
SPARC M7 (32-core 64-bit, SIMD, caches)
|2015 |Oracle |20 nm |{{?}} |{{?}} | |
Core i7 Broadwell-E (10-core 64-bit, SIMD, caches)
|2016 |Intel |14 nm |13,010,000 | |
Apple A10 Fusion (quad-core 64/32-bit ARM64 "mobile SoC", SIMD, caches)
|3,300,000,000 |2016 |Apple |16 nm |125 mm2 |26,400,000 | |
|HiSilicon Kirin 960 (octa-core 64/32-bit ARM64 "mobile SoC", SIMD, caches)
|2016 |16 nm |110.00 mm2 |36,360,000 | |
Xeon Broadwell-E5 (22-core 64-bit, SIMD, caches)
|2016 |Intel |14 nm |456 mm2 |15,790,000 | |
Xeon Phi (72-core 64-bit, 512-bit SIMD, caches)
|8,000,000,000 |2016 |Intel |14 nm |683 mm2 |11,710,000 | |
Zip CPU (32-bit, for FPGAs)
|2016 |Gisselquist Technology |{{?}} |{{?}} |{{?}} | |
Qualcomm Snapdragon 835 (octa-core 64/32-bit ARM64 "mobile SoC", SIMD, caches)
|3,000,000,000{{cite web |url=https://www.notebookcheck.net/Qualcomm-Snapdragon-835-SoC-Benchmarks-and-Specs.207842.0.html |access-date=2017-09-23 |title=Qualcomm Snapdragon 835 (8998) |website=NotebookCheck}}{{cite web |url=https://venturebeat.com/2017/01/03/qualcomms-snapdragon-835-will-debut-with-3-billion-transistors-and-a-10nm-manufacturing-process/ |title=Qualcomm's Snapdragon 835 will debut with 3 billion transistors and a 10nm manufacturing process |last=Takahashi |first=Dean |date=January 3, 2017 |website=VentureBeat}} |2016 |72.3 mm2 |41,490,000 | |
Apple A11 Bionic (hexa-core 64/32-bit ARM64 "mobile SoC", SIMD, caches)
|4,300,000,000 |2017 |Apple |10 nm |89.23 mm2 |48,190,000 | |
AMD Zen CCX (core complex unit: 4 cores, 8 MB L3 cache)
|1,400,000,000{{Cite conference |first=Teja |last=Singh |book-title=Proc. IEEE International Solid-State Circuits Conference |title=3.2 Zen: A Next-Generation High-Performance x86 Core |pages=52–54 |date=2017}} |2017 |AMD |14 nm |44 mm2 |31,800,000 | |
AMD Zeppelin SoC Ryzen (64-bit, SIMD, caches)
|2017 |AMD |14 nm |192 mm2 |25,000,000 | |
AMD Ryzen 5 1600 Ryzen (64-bit, SIMD, caches)
|2017 |AMD |14 nm |213 mm2 |22,530,000 | |
IBM z14 (64-bit, SIMD, caches)
|6,100,000,000 |2017 |IBM |14 nm |696 mm2 |8,764,000 | |
IBM z14 Storage Controller (64-bit)
|9,700,000,000 |2017 |IBM |14 nm |696 mm2 |13,940,000 | |
|HiSilicon Kirin 970 (octa-core 64/32-bit ARM64 "mobile SoC", SIMD, caches)
|2017 |Huawei |10 nm |96.72 mm2 |56,900,000 | |
Xbox One X (Project Scorpio) main SoC (64-bit, SIMD, caches)
|2017 |Microsoft, AMD |16 nm |19,440,000 | |
Xeon Platinum 8180 (28-core 64-bit, SIMD, caches)
|2017 |Intel |14 nm |{{?}} |{{?}} | |
Xeon (unspecified)
|7,100,000,000{{Cite web |first=Stefano |last=Pellerano |url=https://youtube.com/watch?v=pFQj6L4eKc0 |title=Circuit Design to Harness the Power of Scaling and Integration (ISSCC 2022) |website=YouTube |date=2022-03-02}} |2017 |Intel |14 nm |672 mm2 |10,570,000 | |
POWER9 (64-bit, SIMD, caches)
|8,000,000,000 |2017 |IBM |14 nm |695 mm2 |11,500,000 | |
Freedom U500 Base Platform Chip (E51, 4×U54) RISC-V (64-bit, caches)
|2017 |28 nm |data-sort-value="30"|~30 mm2 |8,330,000 | |
SPARC64 XII (12-core 64-bit, SIMD, caches)
|2017 |Fujitsu |20 nm |795 mm2 |6,850,000 | |
|Apple A10X Fusion (hexa-core 64/32-bit ARM64 "mobile SoC", SIMD, caches)
|2017 |Apple |10 nm |96.40 mm2 |44,600,000 | |
Centriq 2400 (64/32-bit, SIMD, caches)
|2017 |Qualcomm |10 nm |398 mm2 |45,200,000 | |
AMD Epyc (32-core 64-bit, SIMD, caches)
|19,200,000,000 |2017 |AMD |14 nm |768 mm2 |25,000,000 | |
Qualcomm Snapdragon 845 (octa-core 64/32-bit ARM64 "mobile SoC", SIMD, caches)
|2017 |Qualcomm |10 nm |94 mm2 |56,400,000 | |
Qualcomm Snapdragon 850 (octa-core 64/32-bit ARM64 "mobile SoC", SIMD, caches)
|2017 |Qualcomm |10 nm |94 mm2 |56,400,000 | |
|HiSilicon Kirin 710 (octa-core ARM64 "mobile SoC", SIMD, caches)
|2018 |Huawei |12 nm |{{?}} |{{?}} | |
|Apple A12 Bionic (hexa-core ARM64 "mobile SoC", SIMD, caches)
|6,900,000,000 |2018 |Apple |7 nm |83.27 mm2 |82,900,000 | |
|HiSilicon Kirin 980 (octa-core ARM64 "mobile SoC", SIMD, caches)
|2018 |Huawei |7 nm |74.13 mm2 |93,100,000 | |
Qualcomm Snapdragon 8cx / SCX8180 (octa-core ARM64 "mobile SoC", SIMD, caches)
|2018 |Qualcomm |7 nm |112 mm2 |75,900,000 | |
|Apple A12X Bionic (octa-core 64/32-bit ARM64 "mobile SoC", SIMD, caches)
|2018 |Apple |7 nm |122 mm2 |82,000,000 | |
Fujitsu A64FX (64/32-bit, SIMD, caches)
|2018{{cite news |title=Fujitsu Successfully Triples the Power Output of Gallium-Nitride Transistors |url=https://www.fujitsu.com/global/about/resources/news/press-releases/2018/0822-02.html |access-date=19 June 2019 |work=Fujitsu |date=August 22, 2018}} |Fujitsu |7 nm |{{?}} |{{?}} | |
Tegra Xavier SoC (64/32-bit)
|2018 |12 nm |350 mm2 |25,700,000 | |
Qualcomm Snapdragon 855 (octa-core 64/32-bit ARM64 "mobile SoC", SIMD, caches)
|2018 |Qualcomm |7 nm |73 mm2 |91,800,000 | |
AMD Zen 2 core (0.5 MB L2 + 4 MB L3 cache)
|2019 |AMD |7 nm |7.83 mm2 |60,664,000 | |
AMD Zen 2 CCX (core complex: 4 cores, 16 MB L3 cache)
|1,900,000,000{{cite web |url=https://en.wikichip.org/wiki/amd/microarchitectures/zen_2 |title=Zen 2 Microarchitecture |website=WikiChip |access-date=2023-02-21}} |2019 |AMD |7 nm |31.32 mm2 |60,664,000 | |
AMD Zen 2 CCD (core complex die: 8 cores, 32 MB L3 cache)
|2019 |AMD |7 nm |74 mm2 |51,350,000 | |
AMD Zen 2 client I/O die
|2019 |AMD |12 nm |125 mm2 |16,720,000 | |
AMD Zen 2 server I/O die
|2019 |AMD |12 nm |416 mm2 |20,050,000 | |
AMD Zen 2 Renoir die
|2019 |AMD |7 nm |156 mm2 |62,820,000 | |
AMD Ryzen 7 3700X (64-bit, SIMD, caches, I/O die)
|5,990,000,000{{cite news |title=AMD Ryzen 9 3900X and Ryzen 7 3700X Review: Zen 2 and 7nm Unleashed |url=https://www.tomshardware.com/reviews/ryzen-9-3900x-7-3700x-review,6214.html |access-date=19 October 2019 |work=Tom's Hardware |date=7 July 2019}}{{efn|3,900,000,000 core chiplet die, 2,090,000,000 I/O die}} |2019 |AMD |7 & 12 nm |199 |30,100,000 | |
HiSilicon Kirin 990 4G
|2019 |Huawei |7 nm |90.00 mm2 |89,000,000 | |
Apple A13 (hexa-core 64-bit ARM64 "mobile SoC", SIMD, caches)
|8,500,000,000 |2019 |Apple |7 nm |98.48 mm2 |86,300,000 | |
IBM z15 CP chip (12 cores, 256 MB L3 cache)
|2019 |IBM |14 nm |696 mm2 |13,220,000 | |
IBM z15 SC chip (960 MB L4 cache)
|12,200,000,000 |2019 |IBM |14 nm |696 mm2 |17,530,000 | |
AMD Ryzen 9 3900X (64-bit, SIMD, caches, I/O die)
|9,890,000,000 |2019 |AMD |7 & 12 nm |273 mm2 |36,230,000 | |
HiSilicon Kirin 990 5G
|2019 |Huawei |7 nm |113.31 mm2 |90,900,000 | |
AWS Graviton2 (64-bit, 64-core ARM-based, SIMD, caches){{Cite web|url=https://www.tomshardware.com/news/amazon-web-services-takes-on-intel-with-64-core-arm-graviton2|title=Amazon Compares 64-core ARM Graviton2 to Intel's Xeon|first=Arne |last=Verheyde |website=Tom's Hardware|date=December 5, 2019|language=en|access-date=2019-12-06}}{{Cite web|url=https://www.nextplatform.com/2019/12/03/finally-aws-gives-servers-a-real-shot-in-the-arm/|title=Finally: AWS Gives Servers A Real Shot In The Arm|last=Morgan|first=Timothy Prickett|date=2019-12-03|website=The Next Platform|language=en-US|access-date=2019-12-06}}
|30,000,000,000 |2019 |7 nm |{{?}} |{{?}} | |
AMD Epyc Rome (64-bit, SIMD, caches)
|2019 |AMD |7 & 12 nm |1,008 mm2 |39,226,000 | |
Qualcomm Snapdragon 865 (octa-core 64/32-bit ARM64 "mobile SoC", SIMD, caches)
|2019 |Qualcomm |7 nm |123,300,000 | |
TI Jacinto TDA4VM (ARM A72, DSP, SRAM)
|2020 |Texas Instruments |16 nm |{{?}} |{{?}} | |
Apple A14 Bionic (hexa-core 64-bit ARM64 "mobile SoC", SIMD, caches)
|2020 |Apple |5 nm |88 mm2 |134,100,000 | |
Apple M1 (octa-core 64-bit ARM64 SoC, SIMD, caches)
|2020 |Apple |5 nm |119 mm2 |134,500,000 | |
HiSilicon Kirin 9000
|15,300,000,000 |2020 |Huawei |5 nm |114 mm2 |134,200,000 | |
AMD Zen 3 CCX (core complex unit: 8 cores, 32 MB L3 cache)
|4,080,000,000{{Cite conference |first=Thomas |last=Burd |book-title=Proc. IEEE International Solid-State Circuits Conference |title=2.7 Zen3: The AMD 2nd-Generation 7nm x86-64 Microprocessor Core |pages=54–56 |date=2022}} |2020 |AMD |7 nm |68 mm2 |60,000,000 | |
AMD Zen 3 CCD (core complex die)
|2020 |AMD |7 nm |81 mm2 |51,230,000 | |
Core 11th gen Rocket Lake (8-core 64-bit, SIMD, large caches)
|2021 |Intel |14 nm +++ 14 nm |37,500,000 or 21,800,000+ {{Cite web|title=Intel's 14nm density|url=https://www.techcenturion.com/7nm-10nm-14nm-fabrication|access-date=2019-11-26|website=www.techcenturion.com|date=November 26, 2019 |language=en}} | |
AMD Ryzen 7 5800H (64-bit, SIMD, caches, I/O and GPU)
|2021 |AMD |7 nm |180 mm2 |59,440,000 | |
AMD Epyc 7763 (Milan) (64-core, 64-bit)
|? |2021 |AMD |7 & 12 nm |1,064 mm2 |{{?}} | |
Apple A15
|15,000,000,000 |2021 |Apple |5 nm |107.68 mm2 |139,300,000 | |
Apple M1 Pro (10-core, 64-bit)
|2021 |Apple |5 nm |137,600,000 | |
Apple M1 Max (10-core, 64-bit)
|57,000,000,000 |2021 |Apple |5 nm |135,600,000 | |
Power10 dual-chip module (30 SMT8 cores or 60 SMT4 cores)
|2021 |IBM |7 nm |1,204 mm2 |29,900,000 | |
Dimensity 9000 (ARM64 SoC)
|15,300,000,000 |url=https://www.mediatek.com/blog/phantom-x2-series-5g-powered-by-mediatek-dimensity-9000 |title=Phantom X2 Series 5G powered by MediaTek Dimensity 9000 |website=Mediatek |date=2022-12-12 |url=https://www.mediatek.com/products/smartphones-2/mediatek-dimensity-9000 |title=MediaTek Dimensity 9000 |website=Mediatek |date=2023-01-21 }} |2021 |Mediatek |{{?}} |{{?}} | |
Apple A16 (ARM64 SoC)
|16,000,000,000 |url=https://www.notebookcheck.net/Apple-A16-Bionic-announced-for-the-iPhone-14-Pro-and-iPhone-14-Pro-Max.647967.0.html |title=Apple A16 Bionic announced for the iPhone 14 Pro and iPhone 14 Pro Max |website=NotebookCheck |date=2022-09-07 |url=https://www.cnet.com/tech/mobile/iphone-14-pro-and-pro-max-only-models-to-get-new-a16-chip/ |title=iPhone 14 Pro and Pro Max Only Models to Get New A16 Chip |website=CNET |date=2022-09-07 |url=https://www.anandtech.com/print/17563/the-apple-2022-fall-iphone-event-live-blog-10am-pt-1700-utc |title=The Apple 2022 Fall iPhone Event Live Blog |website=AnandTech |date=2022-09-07 }} |2022 |Apple |4 nm |{{?}} |{{?}} | |
Apple M1 Ultra (dual-chip module, 2×10 cores)
|114,000,000,000 |2022 |Apple |5 nm |135,600,000 | |
AMD Epyc 7773X (Milan-X) (multi-chip module, 64 cores, 768 MB L3 cache)
|26,000,000,000 + Milan{{cite web|url=https://www.anandtech.com/print/17323/amd-releases-milan-x-cpus-with-3d-vcache-epyc-7003|title=AMD releases Milan-X CPUs|website=AnandTech|date=2022-03-21}} |2022 |AMD |7 & 12 nm |{{?}} | |
IBM Telum dual-chip module (2×8 cores, 2×256 MB cache)
|45,000,000,000 |2022 |IBM |7 nm (Samsung) |1,060 mm2 |42,450,000 | |
Apple M2 (deca-core 64-bit ARM64 SoC, SIMD, caches)
|2022 |Apple |5 nm |{{?}} |{{?}} | |
Dimensity 9200 (ARM64 SoC)
|17,000,000,000 |url=https://www.notebookcheck.net/MediaTek-Dimensity-9200-New-flagship-chipset-debuts-with-ARM-Cortex-X3-CPU-and-Immortalis-G715-GPU-cores-built-around-TSMC-N4P-node.667041.0.html |title=MediaTek Dimensity 9200: New flagship chipset debuts with ARM Cortex-X3 CPU and Immortalis-G715 GPU cores built around TSMC N4P node |website=NotebookCheck |date=2022-11-08 |url=https://www.mediatek.com/products/smartphones-2/mediatek-dimensity-9200 |title=Dimensity 9200 specs |website=Mediatek |date=2022-11-08 |url=https://i.mediatek.com/dimensity-9200 |title=Dimensity 9200 presentation |website=Mediatek |date=2022-11-08 }} |2022 |Mediatek |{{?}} |{{?}} | |
Qualcomm Snapdragon 8 Gen 2 (octa-core ARM64 "mobile SoC", SIMD, caches)
|16,000,000,000 |2022 |Qualcomm |4 nm |268 mm2 |59,701,492 | |
AMD EPYC Genoa (4th gen/9004 series) 13-chip module (up to 96 cores and 384 MB (L3) + 96 MB (L2) cache){{cite web
|url=https://www.servethehome.com/amd-epyc-genoa-gaps-intel-xeon-in-stunning-fashion/ |title=AMD EPYC Genoa Gaps Intel Xeon in Stunning Fashion |website=ServeTheHome |date=2022-11-10 }} |90,000,000,000 |url=https://appuals.com/amd-zettaflop-plans/ |title=AMD Aims to Break the ZettaFLOP Barrier by 2035, Lays Down Next-Gen Plans to Resolve Efficiency Problems |website=Appuals |date=2023-02-21 |url=https://wccftech.com/amd-lays-the-path-to-zettascale-computing-talks-cpu-gpu-performance-plus-efficiency-trends-next-gen-chiplet-packaging-more/ |title=AMD Lays The Path To Zettascale Computing: Talks CPU & GPU Performance Plus Efficiency Trends, Next-Gen Chiplet Packaging & More |website=WCCFtech |date=2023-02-20 }} |2022 |AMD |5 nm (CCD) |1,263.34 mm2 {{cite web |url=https://wccftech.com/amd-epyc-genoa-zen-4-server-cpus-and-sp5-lga-6096-server-platform-details-leaked/ |title=AMD EPYC Genoa & SP5 Platform Leaked – 5nm Zen 4 CCD Measures Roughly 72mm, 12 CCD Package at 5428mm2, Up To 700W Peak Socket Power |website=WCCFtech |date=2021-08-17 {{cite web |url=https://www.hardwaretimes.com/leaked-amd-epyc-genoa-docs-reveal-96-cores-max-tdp-of-700w-and-zen-4-chiplet-dimensions/ |title=Leaked AMD Epyc Genoa Docs Reveal 96 Cores, Max TDP of 700W, and Zen 4 Chiplet Dimensions |website=HardwareTimes |date=2021-08-17 |last1=Syed |first1=Areej }} |71,240,000 | |
HiSilicon Kirin 9000s
|2023 |Huawei |7 nm |107 mm2 |107,690,000 | |
Apple M4 (deca-core 64-bit ARM64 SoC, SIMD, caches)
|2024 |Apple |3 nm |{{?}} |{{?}} | |
Apple M3 (octa-core 64-bit ARM64 SoC, SIMD, caches)
|2023 |Apple |3 nm |{{?}} |{{?}} | |
Apple M3 Pro (dodeca-core 64-bit ARM64 SoC, SIMD, caches)
|2023 |Apple |3 nm |{{?}} |{{?}} | |
Apple M3 Max (16-core 64-bit ARM64 SoC, SIMD, caches)
|2023 |Apple |3 nm |{{?}} |{{?}} | |
Apple A17
|2023 |Apple |3 nm |103.8 mm2 |183,044,315 | |
Sapphire Rapids quad-chip module (up to 60 cores and 112.5 MB of cache){{cite web
|url=https://www.servethehome.com/4th-gen-intel-xeon-scalable-sapphire-rapids-leaps-forward/ |title=4th Gen Intel Xeon Scalable Sapphire Rapids Leaps Forward |website=ServeTheHome |date=2023-01-10 }} |44,000,000,000– |url=https://www.hardwareluxx.de/index.php/news/hardware/prozessoren/58175-isscc-2022-wie-vier-dies-zu-einem-monolithischen-sapphire-rapids-werden.html |title=Wie vier Dies zu einem "monolithischen" Sapphire Rapids werden |website=hardwareLUXX |date=2022-02-21 }} |2023 |Intel |10 nm ESF (Intel 7) |1,600 mm2 |27,500,000– | |
Apple M2 Pro (12-core 64-bit ARM64 SoC, SIMD, caches)
|40,000,000,000{{cite press release |url=https://www.apple.com/newsroom/2023/01/apple-unveils-m2-pro-and-m2-max-next-generation-chips-for-next-level-workflows/ |title=Apple unveils M2 Pro and M2 Max: next-generation chips for next-level workflows |website=Apple |date=2023-01-17 }} |2023 |Apple |5 nm |{{?}} |{{?}} | |
Apple M2 Max (12-core 64-bit ARM64 SoC, SIMD, caches)
|2023 |Apple |5 nm |{{?}} |{{?}} | |
Apple M2 Ultra (two M2 Max dies)
|134,000,000,000{{cite press release |date=2023-06-05 |title=Apple introduces M2 Ultra |url=https://www.apple.com/newsroom/2023/06/apple-introduces-m2-ultra/ |publisher=Apple }} |2023 |Apple |5 nm |{{?}} |{{?}} | |
AMD Epyc Bergamo (4th gen/97X4 series) 9-chip module (up to 128 cores and 256 MB (L3) + 128 MB (L2) cache)
|82,000,000,000{{cite web |url=https://www.servethehome.com/amd-epyc-bergamo-launched-128-cores-per-socket-and-1024-threads-per-1u/ |title=AMD EPYC Bergamo Launched 128 Cores Per Socket and 1024 Threads Per 1U |website=ServeTheHome |date=2023-06-13 }} |2023 |AMD |5 nm (CCD) |{{?}} |{{?}} | |
AMD Instinct MI300A (multi-chip module, 24 cores, 128 GB GPU memory + 256 MB (LLC/L3) cache)
|146,000,000,000{{cite web |url=https://www.amd.com/en/products/accelerators/instinct/mi300/mi300a.html |title=AMD Instinct MI300A Accelerators |website=AMD |access-date=January 14, 2024 |last=Alcorn |first=Paul |url=https://www.tomshardware.com/pc-components/cpus/amd-unveils-instinct-mi300x-gpu-and-mi300a-apu-claims-up-to-16x-lead-over-nvidias-competing-gpus |title=AMD unveils Instinct MI300X GPU and MI300A APU, claims up to 1.6X lead over Nvidia's competing GPUs |website=Tom's Hardware |date=December 6, 2023 |access-date=January 14, 2024 }} |2023 |AMD |5 nm (CCD, GCD) |1,017 mm2 |144,000,000 | |
Processor
!Transistor count !Year !Designer !Area (mm2) !Transistor |
---|
= GPUs =
A graphics processing unit (GPU) is a specialized electronic circuit designed to rapidly manipulate and alter memory to accelerate the building of images in a frame buffer intended for output to a display.
The designer refers to the technology company that designs the logic of the integrated circuit chip (such as Nvidia and AMD). The manufacturer ("Fab.") refers to the semiconductor company that fabricates the chip using its semiconductor manufacturing process at a foundry (such as TSMC and Samsung Semiconductor). The transistor count in a chip is dependent on a manufacturer's fabrication process, with smaller semiconductor nodes typically enabling higher transistor density and thus higher transistor counts.
The random-access memory (RAM) that comes with GPUs (such as VRAM, SGRAM or HBM) greatly increases the total transistor count, with the memory typically accounting for the majority of transistors in a graphics card. For example, Nvidia's Tesla P100 has 15{{nbsp}}billion FinFETs (16 nm) in the GPU in addition to 16{{nbsp}}GB of HBM2 memory, totaling about 150{{nbsp}}billion MOSFETs on the graphics card.{{Cite web|url=https://www.theregister.co.uk/2016/04/05/nvidia_gtc_telsa_p100_pascal/|title=Nvidia's Tesla P100 has 15 billion transistors, 21TFLOPS|last=Williams|first=Chris|website=www.theregister.co.uk|access-date=2019-08-12}} The following table does not include the memory. For memory transistor counts, see the Memory section below.
{{Row hover highlight}}
= FPGA =
A field-programmable gate array (FPGA) is an integrated circuit designed to be configured by a customer or a designer after manufacturing.
= Memory =
{{See also|Random-access memory#Timeline|flash memory#Timeline|read-only memory#Timeline}}
Semiconductor memory is an electronic data storage device, often used as computer memory, implemented on integrated circuits. Nearly all semiconductor memories since the 1970s have used MOSFETs (MOS transistors), replacing earlier bipolar junction transistors. There are two major types of semiconductor memory: random-access memory (RAM) and non-volatile memory (NVM). In turn, there are two major RAM types: dynamic random-access memory (DRAM) and static random-access memory (SRAM), as well as two major NVM types: flash memory and read-only memory (ROM).
Typical CMOS SRAM consists of six transistors per cell. For DRAM, 1T1C, which means one transistor and one capacitor structure, is common. Capacitor charged or not{{clarify|date=June 2023}} is used to store 1 or 0. In flash memory, the data is stored in floating gates, and the resistance of the transistor is sensed{{clarify|date=June 2023}} to interpret the data stored. Depending on how fine scale the resistance could be separated{{clarify|date=June 2023}}, one transistor could store up to three bits, meaning eight distinctive levels of resistance possible per transistor. However, a finer scale comes with the cost of repeatability issues, and hence reliability. Typically, low grade 2-bits MLC flash is used for flash drives, so a 16 GB flash drive contains roughly 64 billion transistors.
For SRAM chips, six-transistor cells (six transistors per bit) was the standard. DRAM chips during the early 1970s had three-transistor cells (three transistors per bit), before single-transistor cells (one transistor per bit) became standard since the era of 4{{nbsp}}Kb DRAM in the mid-1970s.{{cite web |title=Late 1960s: Beginnings of MOS memory |url=http://www.shmj.or.jp/english/pdf/ic/exhibi718E.pdf |website=Semiconductor History Museum of Japan |date=2019-01-23 |access-date=27 June 2019}}{{cite web |title=1970: Semiconductors compete with magnetic cores |url=https://www.computerhistory.org/storageengine/semiconductors-compete-with-magnetic-cores/ |website=Computer History Museum |access-date=19 June 2019}} In single-level flash memory, each cell contains one floating-gate MOSFET (one transistor per bit),{{cite web |title=2.1.1 Flash Memory |url=http://www.iue.tuwien.ac.at/phd/windbacher/node14.html |website=TU Wien |access-date=20 June 2019}} whereas multi-level flash contains 2, 3 or 4 bits per transistor.
Flash memory chips are commonly stacked up in layers, up to 128-layer in production,{{Cite web|url=https://www.anandtech.com/show/14589/sk-hynix-128-layer-4d-nand|title=SK Hynix Starts Production of 128-Layer 4D NAND, 176-Layer Being Developed|last=Shilov|first=Anton|website=www.anandtech.com|access-date=2019-09-16}} and 136-layer managed,{{Cite web|url=https://pcper.com/2019/08/samsung-begins-production-of-100-layer-sixth-generation-v-nand-flash/|title=Samsung Begins Production of 100+ Layer Sixth-Generation V-NAND Flash|date=2019-08-11|website=PC Perspective|access-date=2019-09-16}} and available in end-user devices up to 69-layer from manufacturers.
= Transistor computers =
File:IBM 7070.jpg card cage populated with Standard Modular System cards]]
{{main|Transistor computer}}
Before transistors were invented, relays were used in commercial tabulating machines and experimental early computers. The world's first working programmable, fully automatic digital computer,{{cite news|url=https://www.nytimes.com/1994/04/20/news/20iht-zuse.html|title=A Computer Pioneer Rediscovered, 50 Years On|date=April 20, 1994|newspaper=The New York Times|url-status=dead|archive-url=https://web.archive.org/web/20161104051054/http://www.nytimes.com/1994/04/20/news/20iht-zuse.html|archive-date=November 4, 2016|df=mdy-all}} the 1941 Z3 22-bit word length computer, had 2,600 relays, and operated at a clock frequency of about 4–5 Hz. The 1940 Complex Number Computer had fewer than 500 relays,{{Cite web|url=https://history-computer.com/ModernComputer/Relays/Stibitz.html|title=History of Computers and Computing, Birth of the modern computer, Relays computer, George Stibitz|quote=Initially the 'Complex Number Computer' performed only complex multiplication and division, but later a simple modification enabled it to add and subtract as well. It used about 400-450 binary relays, 6-8 panels, and ten multiposition, multipole relays called "crossbars" for temporary storage of numbers.|website=history-computer.com|access-date=2019-08-22}} but it was not fully programmable. The earliest practical computers used vacuum tubes and solid-state diode logic. ENIAC had 18,000 vacuum tubes, 7,200 crystal diodes, and 1,500 relays, with many of the vacuum tubes containing two triode elements.
The second generation of computers were transistor computers that featured boards filled with discrete transistors, solid-state diodes and magnetic memory cores. The experimental 1953 48-bit Transistor Computer, developed at the University of Manchester, is widely believed to be the first transistor computer to come into operation anywhere in the world (the prototype had 92 point-contact transistors and 550 diodes). A later version the 1955 machine had a total of 250 junction transistors and 1,300 point-contact diodes. The Computer also used a small number of tubes in its clock generator, so it was not the first {{Em|fully}} transistorized. The ETL Mark III, developed at the Electrotechnical Laboratory in 1956, may have been the first transistor-based electronic computer using the stored program method. It had about "130 point-contact transistors and about 1,800 germanium diodes were used for logic elements, and these were housed on 300 plug-in packages which could be slipped in and out." The 1958 decimal architecture IBM 7070 was the first transistor computer to be fully programmable. It had about 30,000 alloy-junction germanium transistors and 22,000 germanium diodes, on approximately 14,000 Standard Modular System (SMS) cards. The 1959 MOBIDIC, short for "MOBIle DIgital Computer", at 12,000 pounds (6.0 short tons) mounted in the trailer of a semi-trailer truck, was a transistorized computer for battlefield data.
The third generation of computers used integrated circuits (ICs).{{cite web |title=Brief History |url=http://museum.ipsj.or.jp/en/computer/main/history.html |website=IPSJ Computer Museum |publisher=Information Processing Society of Japan |access-date=19 June 2019}} The 1962 15-bit Apollo Guidance Computer used "about 4,000 "Type-G" (3-input NOR gate) circuits" for about 12,000 transistors plus 32,000 resistors.{{Cite web|url=https://www.computerhistory.org/siliconengine/aerospace-systems-are-first-the-applications-for-ics-in-computers/|title=1962: Aerospace systems are first the applications for ICs in computers {{!}} The Silicon Engine {{!}} Computer History Museum|website=www.computerhistory.org|access-date=2019-09-02}}
The IBM System/360, introduced 1964, used discrete transistors in hybrid circuit packs. The 1965 12-bit PDP-8 CPU had 1409 discrete transistors and over 10,000 diodes, on many cards. Later versions, starting with the 1968 PDP-8/I, used integrated circuits. The PDP-8 was later reimplemented as a microprocessor as the Intersil 6100, see below.{{Cite web|url=https://www.pdp8.net/straight8/functional_restore.shtml|title=PDP-8 (Straight 8) Computer Functional Restoration|website=www.pdp8.net|access-date=2019-08-22|quote=backplanes contain 230 cards, approximately 10,148 diodes, 1409 transistors, 5615 resistors, and 1674 capacitors}}
The next generation of computers were the microcomputers, starting with the 1971 Intel 4004, which used MOS transistors. These were used in home computers or personal computers (PCs).
This list includes early transistorized computers (second generation) and IC-based computers (third generation) from the 1950s and 1960s.
= Logic functions =
Transistor count for generic logic functions is based on static CMOS implementation.Jan M. Rabaey, Digital Integrated Circuits, Fall 2001: [http://bwrc.eecs.berkeley.edu/Classes/ic541ca/ic541ca%5Ff01/Notes/chapter6.pdf Course Notes, Chapter 6: Designing Combinatorial Logic Gates in CMOS], retrieved October 27, 2012.
class="wikitable sortable" style="text-align: center;" |
Function
! data-sort-type="number" | Transistor count ! class="unsortable"| Ref |
---|
NOT
|2 |rowspan="16" | |
Buffer
|4 |
NAND 2-input
|4 |
NOR 2-input
|4 |
AND 2-input
|6 |
OR 2-input
|6 |
NAND 3-input
|6 |
NOR 3-input
|6 |
XOR 2-input
|6 |
XNOR 2-input
|8 |
MUX 2-input with TG
|6 |
MUX 4-input with TG
|18 |
NOT MUX 2-input
|8 |
MUX 4-input
|24 |
1-bit full adder
|24 |
1-bit adder–subtractor
|48 |
AND-OR-INVERT
|6 |
Latch, D gated
|8 |rowspan="2" | |
Flip-flop, edge triggered dynamic D with reset
|12 |
8-bit multiplier
|3,000 | |
16-bit multiplier
|9,000 | |
32-bit multiplier
|21,000 |{{citation needed|date=June 2020}} |
small-scale integration
|2–100 |
medium-scale integration
|100–500 |
large-scale integration
|500–20,000 |
very-large-scale integration
|20,000–1,000,000 |
ultra-large scale integration
|>1,000,000 | |
= Parallel systems =
Historically, each processing element in earlier parallel systems—like all CPUs of that time—was a serial computer built out of multiple chips. As transistor counts per chip increases, each processing element could be built out of fewer chips, and then later each multi-core processor chip could contain more processing elements.
{{cite journal |first=Kevin |last=Smith |title=Image processor handles 256 pixels simultaneously |journal=Electronics |date=August 11, 1983 }}
Goodyear MPP: (1983?) 8 pixel processors per chip, 3,000 to 8,000 transistors per chip.
Brunel University Scape (single-chip array-processing element): (1983) 256 pixel processors per chip, 120,000 to 140,000 transistors per chip.
Cell Broadband Engine: (2006) with 9 cores per chip, had 234 million transistors per chip.
{{cite news|url=https://news.cnet.com/Cell-chip-Hit-or-hype/2010-1006_3-5568046.html|archive-url=https://web.archive.org/web/20121025113906/https://news.cnet.com/Cell-chip-Hit-or-hype/2010-1006_3-5568046.html|archive-date=2012-10-25|title=Cell chip: Hit or hype?|work=CNET News|first=Michael|last=Kanellos|date=February 9, 2005}}
= Other devices =
Transistor density
The transistor density is the number of transistors that are fabricated per unit area, typically measured in terms of the number of transistors per square millimeter (mm2). The transistor density usually correlates with the gate length of a semiconductor node (also known as a semiconductor manufacturing process), typically measured in nanometers (nm). {{As of|2019}}, the semiconductor node with the highest transistor density is TSMC's 5 nanometer node, with 171.3{{nbsp}}million transistors per square millimeter (note this corresponds to a transistor-transistor spacing of 76.4 nm, far greater than the relative meaningless "5nm")
= MOSFET nodes =
{{Further|List of semiconductor scale examples}}
| 1971
| {{?}}
| PMOS
|-
| {{?}}
| {{?}}
| 1973
| {{?}}
| NMOS
|-
| {{?}}
| {{formatnum:{{#expr:(4*1024)/18.5 round -1}}|}}
| 1973
| {{?}}
| NMOS
| Mostek
|-
| {{?}}
| {{?}}
| 1973
| 7,500 nm
| NMOS
| NEC
|-
| {{?}}
| {{?}}
| 1973
| 6,000 nm
| PMOS
| Toshiba
| {{cite book |last1=Belzer |first1=Jack |last2=Holzman |first2=Albert G. |last3=Kent |first3=Allen |title=Encyclopedia of Computer Science and Technology: Volume 10{{Snd}} Linear and Matrix Algebra to Microorganisms: Computer-Assisted Identification |date=1978 |publisher=CRC Press |isbn=9780824722609 |page=402 |url=https://books.google.com/books?id=iBsUXrgKBKkC&pg=PA402}}
|-
| {{?}}
| {{?}}
| 1976
| 5,000 nm
| NMOS
| Hitachi, Intel
|-
| {{?}}
| {{?}}
| 1976
| 5,000 nm
| CMOS
| RCA
|
|-
| {{?}}
| {{?}}
| 1976
| 4,000 nm
| NMOS
| Zilog
|
|-
| {{?}}
| {{?}}
| 1976
| 3,000 nm
| NMOS
| Intel
| {{cite web|url=https://www.intel.com/pressroom/kits/quickrefyr.htm|title=Intel Microprocessor Quick Reference Guide|website=Intel|access-date=27 June 2019}}
|-
| {{?}}
| {{formatnum:{{#expr:(64*1024)/35.4 round -1}}|}}
| 1977
| {{?}}
| NMOS
| NTT
|-
| {{?}}
| {{?}}
| 1978
| 3,000 nm
| CMOS
| Hitachi
|-
| {{?}}
| {{?}}
| 1978
| 2,500 nm
| NMOS
|-
| {{?}}
| {{?}}
| 1978
| 2,000 nm
| NMOS
| NEC, NTT
|-
| {{?}}
| {{formatnum:{{#expr:(64*1024)/25.2 round -1}}|}}
| 1979
| {{?}}
| VMOS
| Siemens
|-
| {{?}}
| {{formatnum:{{#expr:(64*1024)/9 round -1}}|}}
| 1979
| 1,000 nm
| NMOS
| NTT
|-
| {{?}}
| {{formatnum:{{#expr:(256*1024)/34.4 round -1}}|}}
| 1980
| 1,000 nm
| NMOS
| NTT
|-
| {{?}}
| {{?}}
| 1983
| 2,000 nm
| CMOS
| Toshiba
|-
| {{?}}
| {{?}}
| 1983
| 1,500 nm
| CMOS
| Intel
|-
| {{?}}
| {{?}}
| 1983
| 1,200 nm
| CMOS
| Intel
|-
| {{?}}
| {{?}}
| 1984
| 800 nm
| CMOS
| NTT
|-
| {{?}}
| {{?}}
| 1987
| 700 nm
| CMOS
| Fujitsu
|-
| {{?}}
| {{?}}
| 1989
| 600 nm
| CMOS
| Mitsubishi, NEC, Toshiba
|-
| {{?}}
| {{?}}
| 1989
| 500 nm
| CMOS
| Hitachi, Mitsubishi, NEC, Toshiba
|-
| {{?}}
| {{?}}
| 1991
| 400 nm
| CMOS
| Matsushita, Mitsubishi, Fujitsu, Toshiba
|-
| {{?}}
| {{?}}
| 1993
| 350 nm
| CMOS
| Sony
|-
| {{?}}
| {{?}}
| 1993
| 250 nm
| CMOS
| Hitachi, NEC
|-
| 3LM
| 32,000
| 1994
| 350 nm
| CMOS
| NEC
|-
| {{?}}
| {{?}}
| 1995
| 160 nm
| CMOS
| Hitachi
|-
| {{?}}
| {{?}}
| 1996
| 150 nm
| CMOS
|-
| TSMC 180{{nbsp}}nm
| {{?}}
| 1998
| 180 nm
| CMOS
| TSMC
| {{cite web |title=0.18-micron Technology |url=https://www.tsmc.com/english/dedicatedFoundry/technology/0.18um.htm |publisher=TSMC |access-date=30 June 2019}}
|-
| CS80
| {{?}}
| 1999
| 180 nm
| CMOS
| Fujitsu
|-
| {{?}}
| {{?}}
| 1999
| 180 nm
| CMOS
| Intel, Sony, Toshiba
|-
| CS85
| {{?}}
| 1999
| 170 nm
| CMOS
| Fujitsu
| Diefendorff, Keith (15 November 1999). "Hal Makes Sparcs Fly". Microprocessor Report, Volume 13, Number 5.
|-
| Samsung 140{{nbsp}}nm
| {{?}}
| 1999
| 140 nm
| CMOS
| Samsung
|-
| {{?}}
| {{?}}
| 2001
| 130 nm
| CMOS
| Fujitsu, Intel
|-
| Samsung 100{{nbsp}}nm
| {{?}}
| 2001
| 100 nm
| CMOS
| Samsung
|-
| {{?}}
| {{?}}
| 2002
| 90 nm
| CMOS
| Sony, Toshiba, Samsung
|-
| CS100
| {{?}}
| 2003
| 90 nm
| CMOS
| Fujitsu
|-
| Intel 90{{nbsp}}nm
| 1,450,000
| 2004
| 90 nm
| CMOS
| Intel
| {{cite web |last1=Cutress |first1=Ian |title=Intel's 10nm Cannon Lake and Core i3-8121U Deep Dive Review |url=https://www.anandtech.com/show/13405/intel-10nm-cannon-lake-and-core-i3-8121u-deep-dive-review/3 |website=AnandTech |access-date=19 June 2019}}
|-
| Samsung 80{{nbsp}}nm
| {{?}}
| 2004
| 80 nm
| CMOS
| Samsung
| {{cite news|url=https://www.samsung.com/semiconductor/insights/news-events/samsung-shows-industrys-first-2-gigabit-ddr2-sdram/|title=Samsung Shows Industry's First 2-Gigabit DDR2 SDRAM|date=20 September 2004|work=Samsung Semiconductor|access-date=25 June 2019|publisher=Samsung}}
|-
| {{?}}
| {{?}}
| 2004
| 65 nm
| CMOS
| Fujitsu, Toshiba
| {{cite news |last1=Williams |first1=Martyn |title=Fujitsu, Toshiba begin 65nm chip trial production |url=https://www.infoworld.com/article/2667082/fujitsu--toshiba-begin-65nm-chip-trial-production.html |access-date=26 June 2019 |work=InfoWorld |date=12 July 2004}}
|-
| Samsung 60{{nbsp}}nm
| {{?}}
| 2004
| 60 nm
| CMOS
| Samsung
|-
| TSMC 45{{nbsp}}nm
| {{?}}
| 2004
| 45 nm
| CMOS
| TSMC
|
|-
| Elpida 90{{nbsp}}nm
| {{?}}
| 2005
| 90 nm
| CMOS
| Elpida's presentation at Via Technology Forum 2005 and Elpida 2005 Annual Report
|-
| CS200
| {{?}}
| 2005
| 65 nm
| CMOS
| Fujitsu
| {{Cite web |url=http://www.fujitsu.com/us/news/pr/fma_20050920-1.html |title=Fujitsu Introduces World-class 65-Nanometer Process Technology for Advanced Server, Mobile Applications |access-date=June 20, 2019 |archive-date=September 27, 2011 |archive-url=https://web.archive.org/web/20110927115254/http://www.fujitsu.com/us/news/pr/fma_20050920-1.html |url-status=dead }}
|-
| Samsung 50{{nbsp}}nm
| {{?}}
| 2005
| 50 nm
| CMOS
| Samsung
| {{cite web |title=History |url=https://www.samsung.com/us/aboutsamsung/company/history/ |website=Samsung Electronics |publisher=Samsung |access-date=19 June 2019}}
|-
| Intel 65{{nbsp}}nm
| 2,080,000
| 2006
| 65 nm
| CMOS
| Intel
|-
| Samsung 40{{nbsp}}nm
| {{?}}
| 2006
| 40 nm
| CMOS
| Samsung
|-
| Toshiba 56{{nbsp}}nm
| {{?}}
| 2007
| 56 nm
| CMOS
| Toshiba
|-
| Matsushita 45{{nbsp}}nm
| {{?}}
| 2007
| 45 nm
| CMOS
|-
| Intel 45{{nbsp}}nm
| 3,300,000
| 2008
| 45 nm
| CMOS
| Intel
|-
| Toshiba 43{{nbsp}}nm
| {{?}}
| 2008
| 43 nm
| CMOS
| Toshiba
|-
| TSMC 40{{nbsp}}nm
| {{?}}
| 2008
| 40 nm
| CMOS
| TSMC
| {{cite web |title=40nm Technology |url=https://www.tsmc.com/english/dedicatedFoundry/technology/40nm.htm |publisher=TSMC |access-date=30 June 2019}}
|-
| Toshiba 32{{nbsp}}nm
| {{?}}
| 2009
| 32 nm
| CMOS
| Toshiba
| {{cite news|url=http://www.toshiba.co.jp/about/press/2009_02/pr1102.htm|title=Toshiba Makes Major Advances in NAND Flash Memory with 3-bit-per-cell 32nm generation and with 4-bit-per-cell 43nm technology|date=11 February 2009|work=Toshiba|access-date=21 June 2019}}
|-
| Intel 32{{nbsp}}nm
| 7,500,000
| 2010
| 32 nm
| CMOS
| Intel
|-
| {{?}}
| {{?}}
| 2010
| 20 nm
| CMOS
| Hynix, Samsung
| {{cite web |title=History: 2010s |url=https://www.skhynix.com/eng/about/history2010.jsp |website=SK Hynix |access-date=8 July 2019 |archive-date=April 29, 2021 |archive-url=https://web.archive.org/web/20210429202547/https://www.skhynix.com/eng/about/history2010.jsp |url-status=dead }}
|-
| Intel 22{{nbsp}}nm
| 15,300,000
| 2012
| 22 nm
| CMOS
| Intel
|-
| IMFT 20{{nbsp}}nm
| {{?}}
| 2012
| 20 nm
| CMOS
| IMFT
| rowspan="2" | {{cite news |last1=Shimpi |first1=Anand Lal |title=SandForce Demos 19nm Toshiba & 20nm IMFT NAND Flash |url=https://www.anandtech.com/show/5960/sandforce-demos-19nm-toshiba-20nm-imft-nand-flash |access-date=19 June 2019 |work=AnandTech |date=June 8, 2012}}
|-
| Toshiba 19{{nbsp}}nm
| {{?}}
| 2012
| 19 nm
| CMOS
| Toshiba
|-
| Hynix 16{{nbsp}}nm
| {{?}}
| 2013
| 16 nm
| FinFET
| SK Hynix
|-
| TSMC 16{{nbsp}}nm
| 28,880,000
| 2013
| 16 nm
| FinFET
| TSMC
| {{Cite web|url=https://fuse.wikichip.org/news/2261/tsmc-announces-6-nanometer-process/|title=TSMC Announces 6-Nanometer Process|last=Schor|first=David|date=2019-04-16|website=WikiChip Fuse|access-date=2019-05-31}}{{cite web |title=16/12nm Technology |url=https://www.tsmc.com/english/dedicatedFoundry/technology/16nm.htm |publisher=TSMC |access-date=30 June 2019}}
|-
| Samsung 10{{nbsp}}nm
| 51,820,000
| 2013
| 10 nm
| FinFET
| Samsung
| {{Cite web|url=https://fuse.wikichip.org/news/1443/vlsi-2018-samsungs-8nm-8lpp-a-10nm-extension/|title=VLSI 2018: Samsung's 8nm 8LPP, a 10nm extension|date=2018-07-01|website=WikiChip Fuse|access-date=2019-05-31}}{{cite news|url=https://www.tomshardware.co.uk/NAND-128Gb-Mass-Production-3-bit-MLC,news-43458.html|title=Samsung Mass Producing 128Gb 3-bit MLC NAND Flash|date=11 April 2013|work=Tom's Hardware|access-date=21 June 2019|archive-date=June 21, 2019|archive-url=https://web.archive.org/web/20190621175628/https://www.tomshardware.co.uk/NAND-128Gb-Mass-Production-3-bit-MLC,news-43458.html|url-status=dead}}
|-
| Intel 14{{nbsp}}nm
| 37,500,000
| 2014
| 14 nm
| FinFET
| Intel
|-
| 14LP
| 32,940,000
| 2015
| 14 nm
| FinFET
| Samsung
|-
| TSMC 10{{nbsp}}nm
| 52,510,000
| 2016
| 10 nm
| FinFET
| TSMC
| {{cite web |title=10nm Technology |url=https://www.tsmc.com/english/dedicatedFoundry/technology/10nm.htm |publisher=TSMC |access-date=30 June 2019}}
|-
| 12LP
| 36,710,000
| 2017
| 12 nm
| FinFET
| GlobalFoundries, Samsung
|-
| N7FF
| 96,500,000
| 2017
| 7 nm
| FinFET
| TSMC
| {{cite web |last1=Jones |first1=Scotten |title=TSMC and Samsung 5nm Comparison |url=https://semiwiki.com/semiconductor-manufacturers/samsung-foundry/8157-tsmc-and-samsung-5nm-comparison/ |website=Semiwiki |date=May 3, 2019 |access-date=30 July 2019}}{{cite web |last1=Nenni |first1=Daniel |title=Samsung vs TSMC 7nm Update |url=https://semiwiki.com/semiconductor-manufacturers/samsung-foundry/7926-samsung-vs-tsmc-7nm-update/ |website=Semiwiki |date=2019-01-02 |access-date=6 July 2019}}{{cite web |title=7nm Technology |url=https://www.tsmc.com/english/dedicatedFoundry/technology/7nm.htm |publisher=TSMC |access-date=30 June 2019}}
|-
| 8LPP
| 61,180,000
| 2018
| 8 nm
| FinFET
| Samsung
|-
| 7LPE
| 95,300,000
| 2018
| 7 nm
| FinFET
| Samsung
|-
| Intel 10{{nbsp}}nm
| 100,760,000
| 2018
| 10 nm
| FinFET
| Intel
|-
| 5LPE
| 126,530,000
| 2018
| 5 nm
| FinFET
| Samsung
| {{citation| url =https://semiwiki.com/semiconductor/intel/7544-7nm-5nm-and-3nm-logic-current-and-projected-processes/| title = 7nm, 5nm and 3nm Logic, current and projected processes | first = Scotten|last = Jones }}{{Cite web|url=https://www.anandtech.com/show/14231/samsung-completes-development-of-5-nm-euv-process-technology|title=Samsung Completes Development of 5nm EUV Process Technology|last=Shilov|first=Anton|website=AnandTech|access-date=2019-05-31}}
|-
| N7FF+
| 113,900,000
| 2019
| 7 nm
| FinFET
| TSMC
|-
| CLN5FF
| 171,300,000
| 2019
| 5 nm
| FinFET
| TSMC
|-
| Intel 7
| 100,760,000
| 2021
| 7 nm
| FinFET
| Intel
|
|-
| 4LPE
| 2021
| 4 nm
| FinFET
| Samsung
| {{cite web|url=https://news.samsung.com/global/samsung-foundry-innovations-power-the-future-of-big-data-ai-ml-and-smart-connected-devices|title=Samsung Foundry Innovations Power the Future of Big Data, AI/ML and Smart, Connected Devices|date=2021-10-07}}{{cite web|url=https://www.sammobile.com/news/qualcomm-snapdragon-8-gen-1-made-using-samsung-4nm-process/|title=Qualcomm confirms Snapdragon 8 Gen 1 is made using Samsung's 4nm process|date=2021-12-02}}{{cite web|url=https://9to5google.com/2022/01/14/heres-every-smartphone-confirmed-to-use-the-qualcomm-snapdragon-8-gen-1-chip/|title=List of Snapdragon 8 Gen 1 smartphones available since December 2021|work=9to5Google |date=2022-01-14 |last1=Wilde |first1=Damien }}
|-
| N4
| 196,600,000{{cite web|url=https://fuse.wikichip.org/news/6439/tsmc-extends-its-5nm-family-with-a-new-enhanced-performance-n4p-node/|title=TSMC Extends Its 5nm Family With A New Enhanced-Performance N4P Node|website=WikiChip|date=2021-10-26}}
| 2021
| 4 nm
| FinFET
| TSMC
|-
| N4P
| 2022
| 4 nm
| FinFET
| TSMC
|-
| 3GAE
| 2022
| 3 nm
| MBCFET
| Samsung
| {{citation| url =https://www.tomshardware.com/news/samsung-3nm-gaafet-production-2021,38426.html | title = Samsung Plans Mass Production of 3nm GAAFET Chips in 2021 | first = Lucian |last = Armasu | date = 11 January 2019| work = www.tomshardware.com }}{{cite web|title=Samsung Starts 3nm Production: The Gate-All-Around (GAAFET) Era Begins|url=https://www.anandtech.com/print/17474/samsung-starts-3nm-production-the-gaafet-era-begins|website=AnandTech|date=2022-06-30}}
|-
| N3
| 2022
| FinFET
| TSMC
| {{cite news |title=TSMC Plans New Fab for 3nm |url=https://www.eetimes.com/document.asp?doc_id=1330971 |access-date=26 September 2019 |work=EE Times |date=12 December 2016}}{{Cite web|url=https://www.anandtech.com/show/17013/tsmc-update-3nm-in-q1-2023-3nm-enhanced-in-2024-2nm-in-2025|title=TSMC Roadmap Update: 3nm in Q1 2023, 3nm Enhanced in 2024, 2nm in 2025|date=2021-10-18|website=www.anandtech.com|language=en-us}}
|-
| N4X
| {{?}}
| 2023
| FinFET
| TSMC
| {{cite web|url=https://pr.tsmc.com/english/news/2895|title=TSMC Introduces N4X Process (press release)|website=TSMC|date=2021-12-16}}{{cite web|url=https://www.tsmc.com/english/news-events/blog-article-20211216|title=The Future Is Now (blog post)|website=TSMC|date=2021-12-16}}{{cite web|url=https://www.anandtech.com/print/17123/tsmc-unveils-n4x-node-high-voltages-for-high-clocks|title=TSMC Unveils N4X Node|website=AnandTech|date=2021-12-17}}
|-
| N3E
| {{?}}
| 2023
| FinFET
| TSMC
|-
| 3GAP
| {{?}}
| 2023
| 3 nm
| MBCFET
| Samsung
|-
| Intel 4
| 2023
| 4 nm
| FinFET
| Intel
| {{Cite news|last=Alcorn|first=Paul|date=24 March 2021|title=Intel Fixes 7nm, Meteor Lake and Granite Rapids Coming in 2023|work=Tom's Hardware|url=https://www.tomshardware.com/news/intel-fixes-7nm-meteor-lake-and-granite-rapids-coming-in-2023|access-date=1 June 2021}}{{Cite web|last=Cutress|first=Dr Ian|title=Intel's Process Roadmap to 2025: with 4nm, 3nm, 20A and 18A?!|url=https://www.anandtech.com/show/16823/intel-accelerated-offensive-process-roadmap-updates-to-10nm-7nm-4nm-3nm-20a-18a-packaging-foundry-emib-foveros|access-date=2021-07-27|website=www.anandtech.com}}{{Cite web|last=Cutress|first=Dr Ian|url=https://www.anandtech.com/show/17259/intel-discloses-multigeneration-xeon-scalable-roadmap-new-ecore-only-xeons-in-2024|title=Intel Discloses Multi-Generation Xeon Scalable Roadmap: New E-Core Only Xeons in 2024|date=2022-02-17|website=www.anandtech.com}}
|-
| Intel 3
| {{?}}
| 2023
| 3 nm
| FinFET
| Intel
|-
| {{?}}
| 2024
| 2 nm
| Intel
|-
| Intel 18A
| {{?}}
| 2025
| sub-2 nm
| Intel
|-
| 2GAP
| {{?}}
| 2025
| 2 nm
| MBCFET
| Samsung
|-
| N2
| {{?}}
| 2025
| 2 nm
| GAAFET
| TSMC
| {{cite web|url=https://www.anandtech.com/print/17356/tsmc-roadmap-update-n3e-in-2024-n2-in-2026-major-changes-incoming|title=TSMC roadmap update|website=AnandTech|date=2022-04-22}}
|-
| Samsung 1.4 nm
| {{?}}
| 2027
| 1.4 nm
| {{?}}
| Samsung
|url=https://news.samsung.com/global/samsung-electronics-unveils-plans-for-1-4nm-process-technology-and-investment-for-production-capacity-at-samsung-foundry-forum-2022
|title=Samsung Electronics Unveils Plans for 1.4nm Process Technology and Investment for Production Capacity at Samsung Foundry Forum 2022
|website=Samsung Global Newsroom
|date=2022-10-04}}
|}
Gate count
In certain applications, the term gate count is preferred over the term transistor count. It refers to the number of logic gates built with transistors and other electronic devices needed to implement a design.[https://journals.aps.org/pra/abstract/10.1103/PhysRevA.90.022305 Gate-count estimates for performing quantum chemistry on small quantum computers][https://csrc.nist.gov/CSRC/media/Events/lightweight-cryptography-workshop-2019/documents/papers/does-gate-count-matter-lwc2019.pdf Does gate count matter? Hardware effciency of logic-minimization techniques for cryptographic primitives][https://ieeexplore.ieee.org/abstract/document/5537061 Quantum Algorithm for Spectral Measurement with a Lower Gate Count][https://ieeexplore.ieee.org/abstract/document/10391119 Quantum Gate Count Analysis]
See also
{{div col|colwidth=20em}}
- Dennard scaling
- Electronics industry
- Integrated circuit
- List of best-selling electronic devices
- List of semiconductor scale examples
- MOSFET
- Semiconductor
- Semiconductor device
- Semiconductor device fabrication
- Semiconductor industry
- Transistor
- Cerebras Systems
{{div col end}}
Notes
{{notelist}}
References
{{reflist|30em}}
External links
- [https://www.intel.com/pressroom/kits/events/moores_law_40th/ Transistor counts of Intel processors]
- [https://www.xilinx.com/company/press/kits/asmbl/asmbl_arch_pres.pdf Evolution of FPGA Architecture]
{{CPU technologies}}
{{Graphics Processing Unit}}
{{DEFAULTSORT:Transistor Count}}